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The Etching of $HfO_2$ Thin Film as the ion Energy Distributions in the $BCl_3/Ar$ Inductively Coupled Plasma System  

Kim, Gwan-Ha (중앙대 전자전기공학부)
Kim, Kyoung-Tae (중앙대 전자전기공학부)
Kim, Jong-Gyu (중앙대 전자전기공학부)
Woo, Jong-Chang (중앙대 전자전기공학부)
Kang, Chan-Min (중앙대 전자전기공학부)
Kim, Chang-Il (중앙대 전자전기공학부)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.56, no.2, 2007 , pp. 349-354 More about this Journal
Abstract
In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.
Keywords
Etch; Plasma diagnostics; QMS; ICP; $Ar/BCl_3$;
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