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Electrode Charging Effect on Ion Energy Distribution of Dual-Frequency Driven Capacitively Coupled Plasma Etcher  

Choi, Myung-Sun (Department of Energy Systems Engineering, Seoul National University)
Jang, Yunchang (Department of Energy Systems Engineering, Seoul National University)
Lee, Seok-Hwan (Department of Energy Systems Engineering, Seoul National University)
Kim, Gon-Ho (Department of Energy Systems Engineering, Seoul National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.13, no.3, 2014 , pp. 39-43 More about this Journal
Abstract
The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.
Keywords
IEDF; Plasma etch; Low frequency bias; dual frequency; Capacitively coupled plasma; electrode charging;
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