• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.232-233
• /
• 2013

본 발표에서 2012년 나노융합산업원천기술개발사업 꼭지로 연구개발을 수행하고 있는 "외부 충전없이 반영구적으로 사용이 가능한 10 mWh/cm2급 동위원소기반 전고상(全固相) 하이브리드 전지 원천기술 개발" 사업의 핵심내용을 간략히 소개하고자 한다. 본 과제의 핵심내용은 국내 유일의 원자로인 하나로의 중성자 빔라인을 이용하여 ${\beta}$-선을 방출하는 동위원소파우더를 생산하고, 방출되는 ${\beta}$-선을 효율적으로 흡수할 수 있는 PN-접합 전지구조에 노출시켜 2차적인 e-h 쌍을 생성시키고, 분리시키고 전극으로 포집하여 전력을 생산하는 한국형 동위원소전지 개발에 있다. 더하여 실시간으로 생성되는 미세한 출력전력을 증폭시켜 저장할 수 있는 고효율 전고상 이차전지와 전력제어회로를 포함하는 한국형 하이브리드전지관련 원천기술 개발관련 세부 사업내용을 소개함으로 관련분야 연구에 대한 국내관심을 환기시켜 관련기술개발을 촉진하고자 한다.

• Journal of the Korean Magnetics Society
• /
• v.2 no.2
• /
• pp.91-98
• /
• 1992

In a $Co_{67}Fe_{4.5}Nb_{2}Si_{10}B_{15}$ amorphous alloy ribbon the effect to two-step annealing on the soft magnetic properties has been studied. By two-step annealing method which the second annealing at low temperature of $310^{\circ}C$ for 2 hours is undertaken after the primary annealing at high temperature above $480^{\circ}C$ for 20 minutes at the vacuum state, the coercive force and the squareness are not changed nearly but the initial permeability at d.c. and the effective permeability at a.c. are remark-ably increased compared with the one-step annealing. The maxima of the initial permeability and the effective permeability at 1 kHz after the two-step annealing are 290,000 and 41,000, respectively, which are 30% higher than those of the one-step annealing. The change of magnetic properties with annealing temperature is discussed in terms of the residual stress, the domain size, the cluster and the crystalline phase.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.11
• /
• pp.62-68
• /
• 1990

On the basis of standard Si processing, the miniaturized piezoresistive-type Si pressure sensor with a chip size of $1.7{\times}1.7{mm^2}$ was fabricated and its operating characteristics were investigated. The sensor chip has a full-bridge type of 4 boron-diffused resistors which is formed on an $1.0{\times}1.0{mm^2}$ area, $20{\mu}m$ thick n-type Si diaphragm and finally, encapsulated under room temperature, 1 atm in order to measure a gauge pressure. The operating characteristics of this sensor were determined as a pressure sensitivity of $14.2{\mu}$V/VmmHg, a rated pressure range of 0~760 mmHg, and a maximum nonlinearity of $1.0{\%}$ FS at room temperature.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.11
• /
• pp.49-54
• /
• 1990

In this paper, a simple model is presented for the gate-voltage dependence of the parasitic resistance in MOSFETs with the lightly-doped drain (LDD) structure. At the LDD region located under the gate electrode, an accumulation layer is formed due to the gate voltage. The parasitic resistance of the source side LDD in the channel is treated as a parallel combination of the resistance of the accumulation layer and that of the bulk LDD, which is approximated as a spreading resistance from the end of the channel inversion layer to the ${n^+}$/LDD junction boundary. Also the effects of doping gradients at the junction are discussed. As result of the model, the LDD resistance decreases with increasing the gate voltage at the linear regime, and increase quasi-linearly with the gate voltage at the saturation regime, considering th velocity saturation both in the channel and in the LDD region. The results are in good agreement with experimental data reported by others.

• Journal of Sensor Science and Technology
• /
• v.14 no.2
• /
• pp.96-100
• /
• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.2
• /
• pp.324-330
• /
• 2004

To integration the field device as a control system correctly in fielders systems. We have to offer the DD(Device Description) with the function and internal parameter into the configuration software. The DD which is written in the DDL(Device Description Lansuage) is made as IEC 61804-PART 2 and it is used in Profibus, Foundation Field bus, HART. However, the DD is dependent to the fieldbus and it doesn't have a suitable form in the industrial Ethernet. Therefore, in this paper, we described the internal function and parameter of the Field device as XDD(XML for Device Description) by using XML (extensible Markup Language) which isn't dependent to fieldbus and has a suitable form for industrial ethernet. Futhermore, we present the possibility of XDD's application in the distributed control system by examining the possibility of ethernet's development in the industrial area.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.05a
• /
• pp.298-301
• /
• 2007

Magnesium alloy sheets have unique mechanical properties such as high in-plane anisotropy/asymmetry of yield stress and hardening response. The unusual mechanical behavior of magnesium alloys has been understood by the limited symmetry crystal structure of HCP metals or by deformation twinning. In the present study, the continuum plasticity models considering the unusual plastic behavior of magnesium alloy sheet were derived for a finite element analysis. A new hardening law based on two-surface model was developed to consider the general stress-strain response of metal sheets such as Bauschinger effect, transient behavior and the unusual asymmetry. Three deformation modes observed during the continuous tension/compression tests were mathematically formulated with simplified relations between the state of deformation and their histories. In terms of the anisotropy and asymmetry of the initial yield stress, the Drucker-Prager's pressure dependent yield surface was modified to include the anisotropy of magnesium alloys.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.1
• /
• pp.1-6
• /
• 1985

The point spread function of defocussed image is known as two dimensional function, one of rectangular type and Gaussian type function and etc, and the defocussed image can be modeled as the convolved output between original image and the supposed PSF. But, in .case of analog method using the scanning line of TV camera, one dimensional Process can be effective, and it was shown thats the defocussed image can be analyzed as the convolved output betlween the original image and the pule with finite width in the horizontal irection. And uslng TV camera and a analog compound high pass filter, the restoration experiment Is matte and we have got some pictures with remarked improvements.

• Proceedings of the Korean Society of Applied Pharmacology
• /
• 1994.04a
• /
• pp.189-189
• /
• 1994

Q-35의 일회 및 반복투여 연구결과, 자타학 증상은 단지반복투여 피험자에서 중등도의 두통(1예)과 설사(3예)가 관찰되었으나 이들 설사증례는 장내 세균총 검사상 복감염에 의한 것이 아니었다. Q-35 투여 후 Q-EEG 및 평행기능의 장애 등은 관찰되지 않았으며 임상화학 검사상 반복투여 3예에서 SGOT, SGPT의 경미한 상승을 보였으나 이러한 변화는 정상 범위내에서의 변화이었다. Q-35의 반복투여에 따라 투약 3일에서 8일에 걸처 장내세균총은 일부 호기성 및 혐기성 세균총의 감소를 보였으나 투약종료 10일 후에는 투약전 상태로 회복되었다. Q-35는 투여량의 약 70 % 가 24시간 뇨중으로 배설되었으며 일회 및 반복투여의 결과 용량의존적인 동태양상은 관찰할 수 없었다. 50 mg에서 400 mg까지 일회 투여시 5.6-7.1 시간의 혈장반감기를 보였으며, 반복투여 시험에서는 평균 5.6 $\pm$ 0.7 시간의 반감기를 보였다. Q-35는 타액내로 신속히 이행되었으며 타액내 AUC는 혈장 AUC의 약 75 %에 해당하였고, 식사에 의해 약간의 흡수속도지연(Cmax 0.4 시간지연)과 공복시에 비해 82 %의 상대적 생체이용율을 보였다.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1340-1342
• /
• 2001

ZnO thin films are Prepared on Si(111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain ZnO thin films with high c-axis (002) TC value and electrical resistivity. This method consists of the following two-step deposition procedures: 1st-deposition for 10$\sim$30 min without oxygen at 100W and 2nd-deposition with oxygen added in the range of $O_2/(Ar+O_2)$ = 10 $\sim$ 50%. SAW filters with IDT/ZnO/Si(111) configuration are also fabricated. From the frequency response characteristics, the insertion loss and the side-lobe rejection are estimated.