• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.24-27
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• 2005

The NDT(Non-Destructive Testing) is valid fur the defect detection of rolling stocks because it can be used to detect defects in invisible places. For example, in case of wheelsets fatigue cracks are initiated in the wheel seat that suffers from fretting fatigue damage. But the conventional ICFPD method can not be applied to detect such cracks in press-fit area of the axle by some technical problems. In this study, we introduced a new ICFPD (Induced Current Focusing Potential Drop) method that can be applied in press-fit area of the axle. And we performed the finite element analysis of the new ICFPD method using measured electromagnetic properties of the wheel and axle. It seems that our approach is very useful f3r the detection of defects in invisible places.

• Journal of the Korean Institute of Gas
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• v.5 no.3 s.15
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• pp.63-72
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• 2001

An alternating current (AC) corrosion using coupon and electric resistance (ER) probe has been studied. Coupon coupled with ER probe were applied in terms of AC voltage from high value to low value through the survey of AC voltages on buried gas transmission pipeline over the country. Parameters such as AC current density of coupon, AC voltage, cathodic protection potential, soil resistivity and frequency were monitored continually. Corrosion induced by AC was observed even under cathodically protected condition that met cathodic protection criterion (below -850mv vs. CSE). Corrosion rate was affected mainly not by AC voltage but by both of frequency and AC current density. An experimental corrosion rate relationship could be obtained statistically, In which AC corrosion rate increased linearly with effective AC current density and its slope was 0.619 in case of coupon and 0.885 in case of ER probe.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.2015-2020
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• 2012

The subthreshold characteristics has been analyzed to investigate the effect of two gate in Double Gate MOSFET using impact factor based on scaling theory. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. The potential distribution was used to investigate the short channel effects such as threshold voltage roll-off, subthreshold swings and drain induced barrier lowering by varying impact factor for scaling factor. The impact factor of 0.1~1.0 for channel length and 1.0~2.0 for channel thickness are used to fit structural feature of DGMOSFET. The simulation result showed that the subthreshold swings are mostly effected by impact factor but are nearly constant for scaling factors. And threshold voltage roll-off and drain induced barrier lowering are also effected by both impact factor and scaling factor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Tribology and Lubricants
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• v.38 no.3
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• pp.73-83
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• 2022

This paper is concerned with an analysis of a surface edge crack emanated from a sharp contact edge. For a geometrical model, a square wedge is in contact with a half plane whose materials are identical, and a surface perpendicular crack initiated from the contact edge exists in the half plane. To analyze this crack problem, it is necessary to evaluate the stress field on the crack line which are induced by the contact tractions and pseudo-dislocations that simulate the crack, using the Bueckner principle. In this Part I, the stress filed in the half plane due to the contact is re-summarized using an asymptotic analysis method, which has been published before by the author. Further focus is given to the stress field in the half plane due to a pseudo-edge dislocation, which will provide a stress solution due to a crack (i.e. a continuous distribution of edge dislocations) later, using the Burgers vector. Essential result of the present work is the corrective functions which modify the stress field of an infinite domain to apply for the present one which has free surfaces, and thus the infiniteness is no longer preserved. Numerical methods and coordinate normalization are used, which was developed for an edge crack problem, using the Gauss-Jacobi integration formula. The convergence of the corrective functions are investigated here. Features of the corrective functions and their application to a crack problem will be given in Part II.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.57-57
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• 2011

저차원 나노구조인 자발형성 양자점은 그 우수한 전기적, 광학적 특성으로 많은 주목을 받고 있다. 이미 양자점을 이용한 소자들의 우수성이 입증이 되고 있다. 그러나 양자점의 형성은 단결정 기판 위에서 Stranski-Krastanow 성장 방법을 통해 일어나기 때문에 성장표면에 존재하는 표면 계단구조 등의 국부적인 표면 불균일성에 의해서 모두 동시에 형성되는 것은 아니다. 표면 핵생성의 시간차에 의해 양자점의 크기 불균일성이 나타나게 되며 이는 양자점의 우수성을 저해하는 요인이 된다. 특히, 비정상적으로 크게 성장된 양자점은 내부에 전위 등의 결정결함을 내포하게 되고, 양자점의 우수한 광특성을 손상시키는 주 요인이 된다. 양자점의 우수한 광특성을 소자로 응용하기 위해서는 이러한 비정상적으로 큰 양자점이 없으면서 균일한 양자점을 성장하는 것이 매우 필요하다. 본 발표에서는 그 동안 본 연구실에서 제안한 새로운 양자점 성장 방법에 대한 소개를 하고자 한다. 유기화학금속화학성장(Metal Organic Chemical Vapor Deposition) 도중에 V족 소스가스인 $AsH_3$의 주입을 주기적으로 끊어 주는 새로운 성장 방법(Periodic Arsine Interruption; PAI)을 제안하였다. 이 방법을 통해서 비정상적으로 형성되는 큰 양자점을 완전히 제거할 수 있었다. $AsH_3$을 끊어주는 시간 동안에 표면에서 As의 탈착을 유도하여 표면을 In-rich 쪽으로 유도하였고, 이렇게 함으로써 성장 표면에너지를 높은 쪽으로 바꾸어 줌으로써 핵생성을 위한 표면 roughening이 시작되는 것을 억제하였다. 이렇게 함으로써 미리 핵생성이 되어 비정상적으로 크게 성장하는 양자점으로 억제하면서 거의 동시에 모든 양자점이 핵생성되게 유도하였다. $AsH_3$의 주입 방법의 변화에 따른 양자점의 형성 거동을 연구함으로써 PAI 의 메카니즘을 이해할 수 있었다.

• Geophysics and Geophysical Exploration
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• v.7 no.4
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• pp.217-224
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• 2004

Self-potential and electrical resistivity methods were conducted for locating the auriferous mineralized zone, called Jija Vein, of Sambo mine, Limsu-ri, Haeje-myeon, Muahn-gun, Jeollanam-do. The host rocks of the mineralization include gneiss, rhyolite and felsic dyke. Ore vein is mainly fissured-filling type and sulfide minerals, such as pyrite, are disseminated in country rock. By the electrical responses from SP and surface resistivity methods., the mineralized zone is supposed to extend about 360 m directed N5W with the width of 20 m to 30 m. From resistivity tomograms using inclined borehole to surface, the ore body shape is interpreted as the width of 20 m in depth 40 m to 50 m.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.6
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• pp.243-249
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• 2010

In this thesis, in order to a equivalent circuit-analytical study for a symmetric double gate type MOSFET, we slove analytically the 2D Poisson's equation in a a silicon body. To solve the threshold voltage in a symmetric double gate type MOSFET from the derived expression for the surface potential which the two-dimensional potential distribution of a symmetric double gate type MOSFET is assumed approximately. This thesis can use short and long channel in a silicon body we introduce a new the threshold voltage model in a symmetric double gate type MOSFET and measure it the distance about the range of channel length up to 0.1 [${\mu}m$].

• Proceedings of the Korean Society for Bioinformatics Conference
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• 2004.11a
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• pp.57-63
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• 2004

본 연구에서는 3차원 심근조직에서의 회귀성파동에 대한 수치적 해석결과를 제시한다. 심근 조직에서의 회귀성파동은 심실세동(ventricular fibrillation)의 원인으로 지목되고 있으며 심근세포 이온채널 또는 전기전도시스템 등과 같은 여러 가지 요소들이 관련된 복합적 현상으로 생각되고 있다. 지금까지 이에 관한 많은 연구가 전기생리학적 모델을 이용하여 이루어진바 있으며, 주로 동물 심근세포모델에 기반으로 균일한 2차원 또는 3차원 모델에서의 전기전도 현상 해석을 한 바 있다. 그러나 실제 심장조직의 경우, 두께를 가진 3차원적 형상을 지니고 있으며 층을 따라서 전기생리학적으로 상이한 특성을 가진 세포들로 구성된다. 즉 심근은 층을 가로질러 Epi-cardiac, mid-cardiac, endo-cardiac cell들로 구성되며 각기 다른 APD(action potential duration)을 가지고 있다. 따라서 본 연구에서는 이러한 세가지 종류의 인체 심근세포모델을 사용한 3차원 심근조직에서의 활동전위 전도현상에 대한 결과를 제시한다. 이를 위하여 기존의 인체 3가지 종류의 심근세포 모델을 구현하여 그 타당성을 검토한다. 그리고 이를 바탕으로 3차원 조직모델을 구현하는데, simplified bidomain방법을 사용하였다. 3차원 공간상에서 심근세포에 의한 활동전위 전달현상을 해석하기 위하여 유한요소법을 도입한다. 최종적으로는 3가지의 심근세포층을 가진 3차원 심근조직을 구성하고, 여기에 회귀성 파동을 유도한다. 그리고 단일층으로 이루어진 3차원조직에서의 결과와 비교 분석하여 다세포층에 의한 불균일 효과를 분석하였다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.3
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• pp.51-56
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• 2005

Ground resistance measurement is an elementary technique for the evaluation of grounding system. There are main environmental factors to consider for correct measurement, but the problem is that it is practically most cases to measure ground resistance unable to know the factors. This paper presents a methodology toward true value of resistance in the unknown circumstance, utilizing the defined term, 'variation rate' of potential difference curve appearing in the distance to a current probe as in the three point fall-of-potential method which comprises the characteristics of environmental factors. This methodology is a induced result from the previous demostrated studies.