• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.9
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• pp.823-828
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• 2013

To reduce the cost per watt of photovoltaic power, it is important to reduce the cell thickness of crystalline silicon solar cells. As the thickness of the silicon layer is reduced, two distinctive thermal expansion rates between the silicon and the aluminum layer induce bowing in a solar cell. With a thinner silicon layer, the bowing distance grows exponentially. Excessive bowing could damage the silicon wafer. In this study, we tried to measure an irregularly curved silicon solar cell more accurately using a 3D image scanner. For the detailed analysis of the three-dimensional bowing shape, a least square fit was applied to the point data from the scanned image. It has been found that the bowing distance and shape distortion increase with a decrease in the thickness of the silicon layer. An Ag strip on top of the silicon layer can reduce the bowing distance.

• Polymer(Korea)
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• v.26 no.5
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• pp.670-679
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• 2002

1,3-bis(2-chloroethyl)-1-nitrosourea (BCNU, carmustine) is one of the effective chemotherapeutic agents which has been used clinically for treating malignant glioma. Poly(D,L-lactide-co-glycolide) (PLGA, molecular weight: 20000 g/mole. mole ratio of lactide to glycolide 75 : 15) is a well known biodegradable polymer used as a drug carrier for drug delivery system. In this study, we investigated the BCNU release behaviour of BCNU-loaded PLGA wafers containing poly (N-vinylpyrrolidone) (PVP) or polyethyleneoxide (PEO) and the effect of hydrophilic polymers incoporated in the wafers. BCNU-loaded PLGA microparticles with or without hydrophilic polymers were prepared by a spray drying method and fabricated into wafers by direct compression. Encapsulation efficiency of BCNU-loaded PLGA microparticles containing PVP and PEO was 85 ∼ 97% and crystallinity of BCNU encapsulated in PLGA decreased significantly initial release amount and release rate of BCNU increased with the increasing PVP or PEO amount. Morphological change and mass loss of wafers during the release test were confirmed that hydration and degradation of PLGA would be facilitated with an increase of hydrophilic polymers.

• Composites Research
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• v.20 no.5
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• pp.49-55
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• 2007

Nanocomposite blade for dicing semiconductor wafer is investigated for micro/nano-device and micro/nano-fabrication. While metal blade has been used for dicing of silicon wafer, polymer composite blades are used for machining of quartz wafer in semiconductor and cellular phone industry in these days. Organic-inorganic material selection is important to provide the blade with machinability, electrical conductivity, strength, ductility and wear resistance. Maintaining constant thickness with micro-dimension during shaping is one of the important technologies fer machining micro/nano fabrication. In this study the fabrication of blade by wet processing of mixing conducting nano ceramic powder, abrasive powder phenol resin and polyimide has been investigated using an experimental approach in which the thickness differential as the primary design criterion. The effect of drying conduction and post pressure are investigated. As a result wet processing techniques reveal that reliable results are achievable with improved dimension tolerance.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.31-36
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• 1999

A capacitance-type sensor using porous silicon layer is developed to measure aqueous alcohol concentration. Since alcohol, so called ethanol, is very permeable into the silicon wafer, it is often used to help chemical reaction when the silicon wafer is processed under some aqueous solution. In this work, the sensing property was measured for the alcohol concentration from zero to near 100 percent with two types of samples with porous silicon layer formed in 25 and 35% HF solution, respectively. Good reliability as well as fast response time and good linearity were shown over 10kHz and the measured capacitance was observed to be inverse to alcohol concentration due to the decrease of the whole dielectric constant in porous silicon layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.572-579
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• 2003

By comparing the measured optical reflection spectra with calculated one by the transfer-matrix method (TMM) in epitaxial wafers for vertical-cavity surface-emitting lasers (VCSELs), we have estimated the systematic thickness errors in a simple and nondestructive way. The experimentally confirmed technique is based on the finding that the shape of the reflection spectra depends mainly on a newly defined single parameter, the effective error in the n-mirror layers, and the thickness error in the active cavity simply shifts the Fabry-Perot resonance wavelength. Also shown is that the proposed method is reliable when the relative standard deviation of the random thickness errors is less than 0.005. Because reflection spectra are routinely measured, we can easily estimate the thickness errors nondestructively with high spatial resolution.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.129-137
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• 2000

In this paper, a new method of noncontact measurement has been developed for a 3 dimensional topography in semiconductor wafer, implementing a new optical probe based on the precision defocus measurement. The developed technique consists of the new optical probe, precision stages, and the measurement/control system. The basic principle of the technique is to use the reflected slit beam from the specimen surface, and to measure the deviation of the specimen surface. The defocusing distance can be measured by the reflected slit beam, where the defocused image is measured by the proposed optical probe, giving very high resolution. The distance measuring formula has been proposed for the developed probe, using the laws of geometric optics. The precision calibration technique has been applied, giving about 10 nanometer resolution and 72 nanometer of four sigma uncertainty. In order to quantitize the micro pattern in the specimen surface, some efficient analysis algorithms have been developed to analyse the 3D topography pattern and some parameters of the surface. The developed system has been successfully applied to measure the wafer surface, demonstrating the line scanning feature and excellent 3 dimensional measurement capability.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2034-2036
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• 2005

Four Point Probe 방법을 이용한 반도체 wafer의 면저항 측정을 위하여 single configuration 기술을 적용한 회로를 설계 제작하였으며, 제작된 FPP장치의 면저항 측정범위는 $10{\sim}3000{\Omega}/sq.$ 이고 측정의 정확도는 약 0.5%이하이다.

• Polymer(Korea)
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• v.31 no.5
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• pp.447-453
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• 2007

In this study, we fabricated recrystallized PLGA (rPLGA) particles using the vacuum drying method. In order to investigate an applicability of the rPLGA particles for controlled release system of 5-fluorouracil (5-FU) loaded PLGA wafer, we prepared three different wafers using; 1) untreated PLGA (uPLGA), 2) rPLGA, and 3) uPLGA and rPLGA (4 : 1, 1 : 1 or 1 : 4). The rPLGA particles were characterized using NMR, IR and GPC to compare with uPLGA particles. The surface and cross section morphology of the prepared wafers were observed by the scanning electron microscope. The release profile of the 5-FU loaded wafer was measured by HPLC. The 5-FU/rPLGA wafer released the incorporated 5-FU in a sustained manner with low initial burst compared to 5-FU/uPLGA. These results showed that the ratio of pure PLGA/recrystallized PLGA can affect the release behaviors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.222-222
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• 2013

GaN 기반 반도체는 넓은 bandgap을 가지고 있어 가시광부터 자외선까지 다양한 광전소자에 유용하게 사용된다. 광전소자중 발광다이오드의 경우 대부분 사파이어 기판위에 성장된다. 하지만 사파이어와 GaN의 격자 불일치 및 열팽창 계수의 차이로 인해 고품질의 GaN를 성장하기가 어렵다. 특히 열팽창 계수의 차이는 GaN 성장 공정이 고온에서 이루어지기 때문에 성장후 상온으로 온도가 떨어질 때 웨이퍼의 bowing을 발생시키고 동시에 dislocation이나 crack과 같은 결함이 생성되 GaN 성장막의 품질을 떨어트린다. 웨이퍼의 크기가 커지면 커질수록 웨이퍼 bowing은 커져 이에 대한 연구는 중요하다. 본 논문에서 2인치 사파이어 기판위에 성장된 GaN의 bow특성을 알아보기 위해 먼저 simulation을 하였고 실제로 성장된 GaN 웨이퍼와 비교를 하였다. c-plane 사파이어 기판위에 성장된 c-plane GaN의 bow특성을 알아보기 위해 성장 온도 $1,100^{\circ}C$에서 GaN두께를 1 ${\mu}m$에서 10 ${\mu}m$까지 1 ${\mu}m$씩 변화시켜 가며 simulation을 하였다. GaN두께가 1 ${\mu}m$일때는 bow가 11 ${\mu}m$, 6 ${\mu}m$ 일때는 54.7 ${\mu}m$, 10 ${\mu}m$ 일때는 108 ${\mu}m$를 얻어 GaN두께가 1 ${\mu}m$씩 증가할 때 마다 bow가 약 10 ${\mu}m$씩 증가하였다. 성장온도에 대한 영향을 알아보기 위해 $700^{\circ}C$에서 $1,200^{\circ}C$까지 $100^{\circ}C$씩 증가시켜며 bow특성 simulation을 하였다. 6 ${\mu}m$성장된 GaN의 경우 성장온도가 $100^{\circ}C$ 씩 증가할 때 bow는 약 6 ${\mu}m$ 증가하였다. 실제 성장된 c-plane GaN웨이퍼와 비교하기 위해 GaN을 각각 3 ${\mu}m$와 6 ${\mu}m$를 성장시켰고 high resolution x-ray diffraction장비를 사용하여 bow를 측정한 결과 각각 28 ${\mu}m$와 61 ${\mu}m$ 였고 simulation결과는 각각 33 ${\mu}m$와 65.5 ${\mu}m$를 얻어 비슷한 결과를 보였다. c-plane 사파이어 기판위에 성장된 c-plane GaN는 방향에 무관하게 동일한 bow 특성을 가지는 반해 r-plane 사파이어 기판위에 성장된 a-plane GaN는 방향에 따라 다른 bow특성을 보인다. a-plane GaN 이방향성적인 bow 특성을 알아보기 위해 simulation을 하였다. $1,100^{\circ}C$에서 a-plane GaN을 성장할 때 두께가 1 ${\mu}m$ 증가할 때마다 bow가 c축 방향으로는 21.7 ${\mu}m$씩 증가하였고 m축 방향으로는 11.8 ${\mu}m$ 씩 증가하여 매우 큰 이방향성적인 bow 특성을 보였다. 실제 r-plane 사파이어 기판위에 성장된 a-plane GaN의 bow를 측정하였고 simulation 결과와 비교해 보았다.

• Clean Technology
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• v.6 no.1
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• pp.79-84
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• 2000

In this study, to reduce the consumption of chemicals in cleaning processes, Si-wafers contaiminated with metallic impurities were cleaned with electrolyzed water(EW), which was generated by the electrolysis of a diluted electrolyte solution or ultra pure water(UPW). Electrolyzed water could be controlled for obtaining wide ranges of pH and ORP(oxidation-reduction potential). The pH and oxidation-reduction potential of anode water and cathode water were measured to be 4.7 and +1000mV, and 6.3 and -550mV, respectively. To analyze the amount of metallic impurities on Si-wafer surfaces, ICP-MS was introduced. Anode water was effective for Cu removal, while cathode water was more effective for Fe removal.