• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.260-260
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• 2004

연삭 가공은 대직경 반도체 웨이퍼의 경면 가공, 산업용 정밀 부품, 광학 분야의 고정밀급 렌즈 등 여러 산업 분야의 각종 정밀 부품의 마무리 공정에 적총되어 제품의 질을 좌우하는 필수적인 공정이라 할 수 있다. 이러한 연삭 가공은 높은 치수 정밀도와 양호한 표면 거칠기 및 제품의 형상을 동시에 만족시킬 수 있는 가공 기술로서 , 대직경 웨이퍼 생산에 있어서, 고정밀ㆍ고품위의 웨이퍼를 양산하는데 적합한 기술로 인식되고 있다.(중략)

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1-5
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• 2005

The grinding process is replacing lapping and etching process because significant cost savings and performance improvemnets is possible. This paper presents the experimental results of wafer grinding. A three-variable two-level full factorial design was employed to reveal the main effects as well as the interaction effects of three process parameters such as wheel rotational speed, chuck table rotational speed and feed rate on TTV and STIR of wafers. The chuck table rotaional speed was a significant factor and the interaction effects was significant. The ground wafer shape was affected by surface shape of chuck table.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.63-67
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• 2008

3D integration technology has been a major focus of the next generation of IC industries. In this study Si wafer ultra-thinning has been investigated especially for the effect of ultra-thinning on the silicon surface. Wafers were grinded down to $30{\mu}m\;or\;50{\mu}m$ thickness and then grinded only samples were compared with surface treated samples in terms of surface roughness, surface damages, and hardness. Dry polishing or wet etching treatment has been applied as a surface treatment. Surface treated samples definitely showed much less surface damages and better roughness. However, ultra-thinned Si samples have the almost same hardness as a bulk Si wafer.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.2
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• pp.187-194
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• 2002

For the fine grinding process development of semiconductor monocrystalline silicon, wheel rotational speed, chuck rotational speed, feed rate and hysteresis force were controlled. Magic mirror system was used for grinding wheel pattern analysis. Curvature of wheel pattern was measured by fitting equation. The modeling of surface wheel pattern was related to wheel and chuck rotational speed. The calculated curvature of the model was well matched with the measured curvature. The statistical analysis indicated wheel and chuck rotational speed were significantly effective on.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.321-321
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• 2004

본 연구에서는 웨이퍼 단면 연삭기 구조물의 경량화 고강성화 최적설계를 위하여 가변벌점함수 유전 알고리즘을 이용한 다단계 최적설계 방법을 적용하였다. 구조강성 최대화와 중량 최소화라는 상반된 성질의 목적함수를 최적화하기 위하여 강성의 역수 개념인 컴플라이언스(compliance)를 도입하여 목적함수론 최소화시키는 문제로 만들었으며, 가증방법(weighted method)을 이용하여 다목적 함수를 단일 목적함수로 변환시켰다. 부재 단면형상 최적화 단계와 정적설계 최적화 단계, 및 동적 설계 최적화 단계를 순차적으로 수행하는 다단계 최적설계를 방법을 연삭기 구조물의 최적설계에 적용하였다.(중략)

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1082-1086
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• 2004

In silicon wafer manufacturing process, the grinding process has been adopted to improve the flatness of wafer. The grinding of wafer is usually used by the infeed grinding machine. The infeed grinding machine has been depended on imports. Therefore, it is necessary to develop the infeed grinding machine because the demand of the infeed grinding machine is increasing more and more. This paper describes the technologies of infeed grinding machine and intend to introduce the studies in the development of the intelligent grinding system for grinding of wafer. The air bearing spindle for the infeed grinding machine was developed by domestic technologies and the grinding part design of the intelligent grinding system for wafer grinding was completed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.555-556
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• 2006

In recent years, the higher flatness level in wafer shape has been strictly demanded with a high integration of the semiconductor devices. It has become difficult for a conventional wafer preparing process to satisfy those demands. In order to meet those demands, surface grinding with in-feed grinder is adopted. In an in-feed grinding method, a chuck table fur fixing a semiconductor wafrr rotates on its rotation axis with a slight tilt angle to the rotation axis of a cup shaped grinding wheel and the grinding wheel in rotation moves down to grind the wafer. So, stability of the grinder structure is very important to aquire a wafer of good quality. This paper describes the features of the in-feed grinder and some FEM analysis results of the grinder structure.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.145-154
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• 2002

CMP (Chemical mechanical polishing) process was used to control the fine grinding process induced mechanical damage of Cz Silicon wafer. Characterization of mechanical damage was carried out using Nomarski microscope, magic mirror and also using angle lapping and lifetime scanner evaluation after heat treatment. Magic mirror and lifetime scanner were very useful for the residual damage pattern characterization and CMP process was effective on the reduction of fine grinding induced mechanical damage.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.5-10
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.563-564
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• 2006

In silicon wafer manufacturing process, the grinding process has been adopted to improve the flatness of water. The grinding of wafer is usually used by the infeed grinding machine. Grinding conditions are spindle speed, feed speed, rotation speed, grinding stone etc. But grinding condition selection and analysis is so difficult in grinding machine. In the intelligent grinding system based on knowledge many researchers have studied expert system, neural network, fuzzy etc. In this paper we deal grinding condition selection method, Taguchi method and Genetic Analysis.