Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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Silicon Wafering Process and Fine Grinding Process Induced Residual Mechanical Damage

반도체 실리콘의 웨이퍼링 및 정밀연삭공정후 잔류한 기계 적 손상에 관한 연구

  • 오한석 (연세대학교 세라믹공학과, (주)누리) ;
  • 이홍림 (연세대학교 세라믹공학과)
  • Published : 2002.06.01
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Abstract

CMP (Chemical mechanical polishing) process was used to control the fine grinding process induced mechanical damage of Cz Silicon wafer. Characterization of mechanical damage was carried out using Nomarski microscope, magic mirror and also using angle lapping and lifetime scanner evaluation after heat treatment. Magic mirror and lifetime scanner were very useful for the residual damage pattern characterization and CMP process was effective on the reduction of fine grinding induced mechanical damage.

Keywords

References

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