반도체 실리콘재료의 정밀연삭을 위한 공정변수와 연삭후 표면에 형성된 wheel pattern과의 관계

Surface Wheel Pattern Analysis and Grinding Process Parameters of Silicon

  • 오한석 (연세대학교 세라믹공학과, 엠이엠씨 코리아(주)) ;
  • 박성은 (연세대학교 세라믹공학과) ;
  • 이홍림 (연세대학교 세라믹공학과)
  • Oh, Han-Seog (Dept. of Ceramics Engineering, Yonsei University) ;
  • Park, Sung-Eun (Dept. of Ceramics Engineering, Yonsei University) ;
  • Lee, Hong-Lim (Dept. of Ceramics Engineering, Yonsei University)
  • 발행 : 2002.02.01

초록

For the fine grinding process development of semiconductor monocrystalline silicon, wheel rotational speed, chuck rotational speed, feed rate and hysteresis force were controlled. Magic mirror system was used for grinding wheel pattern analysis. Curvature of wheel pattern was measured by fitting equation. The modeling of surface wheel pattern was related to wheel and chuck rotational speed. The calculated curvature of the model was well matched with the measured curvature. The statistical analysis indicated wheel and chuck rotational speed were significantly effective on.

키워드

참고문헌

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