• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.177-180
• /
• 2003

초 박형 실리콘 칩을 이용하여 실리콘 칩들을 포함한 모듈 전체가 굽힘이 자유로운 유연 패키징 기술을 구현하였으며 bending test와 FEA를 통해 초 박형 실리콘 칩의 기계적 특성을 살펴보았다. 초 박형 실리콘칩$(t<30{\mu}m)$은 표면손상의 가능성을 배제하기 위해 화학적 thinning 방법을 이용하여 제작되었으며 열압착 방식에 의해 $Kapton^{(R)}$에 바로 실장 되었다. 실리콘칩과 $Kapton^{(R)}$ 기판간의 단차가 적기 때문에 전기도금 방식으로 전기적 결선을 이룰 수 있었다. 이러한 방식의 패키징은 이러한 공정은 flip chip 공정에 비해 공정 간단하고 wire 본딩과 달리 표면 단차 적다. 따라서 연성회로 기관을 비롯한 인쇄회로기판의 표면뿐만 아니라 기판 자체에 삽임이 가능하여 패키징 밀도 증가를 기대할 수 있으며 실질적인 실장 가능면적을 극대화 할 수 있다.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.3
• /
• pp.11-15
• /
• 2010

In this paper, we focused on the optimization of bonding conditions for the successful thermo-compression bonding of electrodes between the RPCB and FPCB with Sn-Pb solder. The peel strength was proportionally affected by the bonding conditions, such as pressure, temperature, and time. In order to figure out an optimized bonding condition, fracture energies were calculated through F-x (force-displacement) curves in the peel test. The optimum condition for the thermo-compression bonding of electrodes between the RPCB and FPCB was found to be temperature of $225^{\circ}C$ and time of 7 s, and its peel strength was 22 N/cm.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.18 no.4
• /
• pp.175-182
• /
• 2017

In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.110-110
• /
• 2017

마이크로 플루이딕 디바이스는 화학, 생물학 실험 및 생체 의학 진단을 위한 플랫폼으로 지난 20년간 그 사용 및 연구가 증가되어 왔다. 마이크로 플루이딕 디바이스를 제작하는 데 있어 가장 일반적으로 사용되는 재료는 실리콘이지만 비용이 많이 들고 불투명하므로 광학 검출이 필요한 곳에 적용이 제한된다. 이러한 측면에서 열가소성 플라스틱은 상업화의 중요한 요소인 대량 생산에 있어 큰 잠재력을 가지고 있으며 저렴하고, 가공이 쉽고, 유연하고, 광학적으로 투명하고, 화학적으로 불활성이며, 생체적합성을 가진다. 본 연구에서는 열가소성 플라스틱의 일종인 PMMA Poly(methylmethacrylate)를 효율적으로 접합하기 위해 비교적 낮은 온도와 낮은 압력에서 에탄올을 활용한 접착방식을 개발하였다. 먼저, PMMA 기판의 전체 표면을 $80^{\circ}C$에서 20 분 동안 에탄올로 처리한 후, $60^{\circ}C$에서 20 분간 열 압착하는 방식으로 영구적인 결합이 이루어졌다. 결합 강도 및 채널의 sealing 정도를 확인하기 위해, 인장 강도, 누수 및 파열 테스트를 수행하였다. 결합강도는 약 12.4 MPa로 타 연구와 비교할 때 매우 높았으며 마이크로 채널의 전체 내부 체적보다 거의 450 배 높은 강한 액체 흐름을 견딜 정도로 견고한 결합이 유지되었다. 열가소성 플라스틱의 본딩에 사용되는 유기 용매는 광학 특성을 희생시키지 않으면서 결합 속도를 높일 수 있지만, 결합 공정 중에 용매로 인해 마이크로 채널이 막히는 현상이 발생될 수 있다. 따라서, 견고한 본딩을 유지하면서 채널 막힘을 방지하기 위해 마이크로 채널을 소수성으로 선택적으로 처리하여 내벽의 표면 특성을 튜닝해 주는 기법을 추가로 적용하였다. 본 연구에서 사용한 방법은 아민-PDMS (polydimethylsiloxane) 링커를 적용하여 기판 표면의 극성을 변경시켜 주었다. 아민-PDMS 링커는 PC (polycarbonate), PET (polyethylene terephthalate), PVC (polyvinyl chloride) 및 PI (polyimide)와 같은 다양한 열가소성 플라스틱의 표면 소수성을 현저히 증가시키며 화학적, 열적 안정성이 뛰어나다. 아민-PDMS 링커는 PMMA의 카보닐 그룹과 반응할 수 있는 아민 사이드 그룹을 포함하는 PDMS 백본으로 구성되며 처리된 대상표면을 소수성으로 만든다. 아민-PDMS 링커 처리 이후 채널은 소수성으로 변화되었으며 이는 접촉각(contact angle)의 증가로 확인되었다. 코팅된 채널을 에탄올로 30분간 80도에서 처리하여도 소수성은 그대로 유지되어 마이크로 채널의 선택적인 소수성 코팅이 성공적으로 수행되었다.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.3
• /
• pp.71-76
• /
• 2012

A chip interconnection technology for smart fabrics was investigated by using flip-chip bonding of SnBi low-temperature solder. A fabric substrate with a Cu leadframe could be successfully fabricated with transferring a Cu leadframe from a carrier film to a fabric by hot-pressing at $130^{\circ}C$. A chip specimen with SnBi solder bumps was formed by screen printing of SnBi solder paste and was connected to the Cu leadframe of the fabric substrate by flip-chip bonding at $180^{\circ}C$ for 60 sec. The average contact resistance of the SnBi flip-chip joint of the smart fabric was measured as $9m{\Omega}$.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.1
• /
• pp.29-36
• /
• 2004

A flexible packaging scheme, which includes chip packaging, has been developed using a thinned silicon chip. Mechanical characteristics of thinned silicon chips are examined by bending tests and finite element analysis. Thinned silicon chips (t<30 $\mu\textrm{m}$) are fabricated by chemical etching process to avoid possible surface damages on them. And the chips are stacked directly on $Kapton^{Kapton}$film by thermal compressive bonding. The low height difference between the thinned silicon chip and $Kapton^{Kapton}$film allows electroplating for electrical interconnection method. Because the 'Chip' is embedded in the flexible substrate, higher packaging density and wearability can be achieved by maximized usable packaging area.

• Design & Manufacturing
• /
• v.14 no.3
• /
• pp.23-30
• /
• 2020

Laser Assisted Thermo-Compression Bonding (LATCB) has been proposed to improve the "chip tilt due to the difference in solder bump height" that occurs during the conventional semiconductor chip bonding process. The bonding module of the LATCB system has used a piezoelectric actuator to control the inclination of the compression jig on a micro scale, and the piezoelectric actuator has been directly coupled to the compression jig to minimize the assembly tolerance of the compression jig. However, this structure generates a lateral force in the piezoelectric actuator when the compression jig is tilted, and the stacked piezoelectric element vulnerable to the lateral force has a risk of failure. In this paper, the optimal design of the flexure hinge was performed to minimize the lateral force generated in the piezoelectric actuator when the compression jig is tilted by using the displacement difference of the piezoelectric actuator in the bonding module for LATCB. The design variables of the flexure hinge were defined as the hinge height, the minimum diameter, and the notch radius. And the effect of the change of each variable on the stress generated in the flexible hinge and the lateral force acting on the piezoelectric actuator was analyzed. Also, optimization was carried out using commercial structural analysis software. As a result, when the displacement difference between the piezoelectric actuators is the maximum (90um), the maximum stress generated in the flexible hinge is 11.5% of the elastic limit of the hinge material, and the lateral force acting on the piezoelectric actuator is less than 1N.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.3
• /
• pp.53-58
• /
• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Design & Manufacturing
• /
• v.13 no.4
• /
• pp.10-16
• /
• 2019

Semiconductor chip is bonded to the substrate by melting solder bumps. In general, the chip bonding is applied by a Reflow process or a Thermo-Compression(TC) bonding process. In this paper, we introduce a Laser Assisted Thermo-Compression bonding (LATCB) process to improve the anxiety of the existing process(Reflow, TC bonding). In the LATCB process, the chip is bonded to the substrate by irradiating a laser with a uniform energy density in the same area as the chip to melt only the solder bumps and press the chip with a Transparent Compression Module (TCM). The TCM consists of a fused silica header for penetrating the laser and pressurizing the chip, and a piezoelectric actuator (P.A.) coupled to both ends of the header for micro displacement control of the header. In addition, TCM is a structure that can pressurize the chip and deliver it to the chip and solder bumps without losing the energy of the laser. Fused silica, which is brittle, is vulnerable to deformation, so the header may be damaged when an external force is applied for pressurization or a displacement differenced is caused by piezoelectric actuators at both ends. On the other hand, in order to avoid interference between the header and the adjacent chip when pressing the chip using the TCM, the header has a notch at the bottom, and breakage due to stress concentration of the notch is expected. In this study, the thickness and notch length that the header does not break when the external force (500 N) is applied to both ends of the header are optimized using structural analysis and Coulomb-Mohr failure theory. In addition, the maximum displacement difference of the P.A.s at both ends where no break occurred in the header was derived. As a result, the thickness of the header is 11 mm, and the maximum displacement difference between both ends is 8 um.