• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.47-55
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• 2005

This work describes an 8b 240 MS/s CMOS ADC as one of embedded core cells for high-performance displays requiring low power and small size at high speed. The proposed ADC uses externally connected pins only for analog inputs, digital outputs, and supplies. The ADC employs (1) a two-step pipelined architecture to optimize power and chip size at the target sampling frequency of 240 MHz, (2) advanced bootstrapping techniques to achieve high signal bandwidth in the input SHA, and (3) RC filter-based on-chip I/V references to improve noise performance with a power-off function added for portable applications. The prototype ADC is implemented in a 0.18 um CMOS and simultaneously integrated in a DVD system with dual-mode inputs. The measured DNL and INL are within 0.49 LSB and 0.69 LSB, respectively. The prototype ADC shows the SFDR of 53 dB for a 10 MHz input sinewave at 240 MS/s while maintaining the SNDR exceeding 38 dB and the SFDR exceeding 50 dB for input frequencies up to the Nyquist frequency at 240 MS/s. The ADC consumes, 104 mW at 240 MS/s and the active die area is 1.36 ㎟.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.65-73
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• 2006

This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.476-477
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• 2013

반도체의 성능은 최근 10년 사이에 급격하게 발전했고 아날로그 및 디지털 회로 소자들에 있어 저전력/고속 특성 요구가 커지고 있다 [1]. 상온에서 30,000 $cm^2$/Vs 이상의 전자 이동도를 가지며 큰 conduction band offset을 갖는 InAs/AlSb 2차원전자가스(2DEG) 소자는 Spinorbit-interaction의 값이 매우 커서 SPIN-FET 소자로 크게 주목받고 있다 [2]. 본 발표자들은 GaAs 기판위에 성장한 InAs 2DEG HEMT 소자의 전/자기적인 특성과 고속반응 물질로 주목 받는 InSb 박막소자의 doping 특성에 따른 전기적/물리적인 특성의 평가에 대해 그 결과를 소개하고자 한다. 격자정합과 Semi-insulating 기판의 부재로 상용화되어 있는 GaAs와 InP 기판위에 물질차이에 따른 고유의 한계 특성을 줄이기 위한 Pseudomorphic이라 불리는 특별한 박막 성장 기법을 적용하여 높은 전자 이동도를 가지며 spin length가 길어 Spin-FET로서 크게 주목받고 있는 InAs 2DEG HEMT 소자를 완성시켰다. 60,000 ($cm^2$/Vs) 이상의 높은 전자 이동도를 갖는 소자의 구현을 목표로 연구를 진행하였으며 1.8 K에서 측정된 Spin-orbit interaction의 값은 6.3e-12 (eVm)이다. InAs/InGaAs/InAlAs 및 InGaAs/InAlAs 구조의 InP 기반의 소자에서 보다 큰 값으로 향후 Spin-FET 응용에 크게 기대하고 있다. 또한, GaAs 기판위에 구현된 InSb 소자는 격자부정합 감소를 위해 InAs 양자점을 사용하여 약 $2.6{\mu}m$ 두께로 구현된 InSb 박막 소자는 상온에서 약 60,400 ($cm^2$/Vs)의 상온 전자이동도를 보였으며 현재 동일 두께에서 세계 최고결과(~50,000 $cm^2$/Vs)에 비해 월등하게 높은 값을 보이고 있다. Hall bar pattern 공정을 거쳐 완성된 소자는 측정 결과 10~20% 이상 향상된 전자 이동도를 보였다. 2e18/$cm^3$ 미만의 p-doping의 경우, 상온에서 n-type 특성을 보이나, 저온에서 p-type으로 변하는 특성을 보였고 n-doping의 경우 5e17/$cm^3$까지는 전자 이동도만 감소하고, doping에 의한 효과는 크게 없었다. 1e18/$cm^3$의 높은 doping을 할 경우 carrier가 증가하는 것을 확인했다. 이상의 측정 결과로 Spin-FET 소자로서 아주 우수하다는 것을 확인할 수 있었고 n-/p- type이 특성을 고려한 high quality InSb 박막소자의 응용을 위한 중요한 정보를 얻을 수 있었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.366-375
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• 2008

Generally a return current plane(RCP) of high speed digital and analog part is partitioned. This is achieved in order to decrease the noise interference between subsystem in PCBs(Printed Circuit Boards). However, when the connected signal line exists between each sub system, this partition will cause unwanted effects. In a circuital point of view, RCP partition has a bad influence upon signal integrity. In a EMI(Electromagnetic Interference) point of view, the partition of the return current plane becomes a primary factor to increase the radiated emission. Component bridge(CB) is usecl for the way of maintaining signal integrity, still specific user's guide doesn't give sufficient principle. In a view point of signal integrity, design principle of multi-CB using method will be analyzed by measurement and simulation. And design principle of noise mitigation will be provided. Generally interval of CB is ${\lambda}/20$ ferrite bead. In this study. When multi-CB connection is applied, design principle of ferrite bead and chip resistor is proved by measurement and simulation. Multi-connected chip resistance$(0{\Omega})$ is proved to be more effective design method in the point of signal integrity.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.1
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• pp.74-84
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• 2007

This paper presents a new dual-loop Delay Locked Loop(DLL) to expand the delay lock range of a conventional DLL. The proposed dual-loop DLL contains a Coarse_loop and a Fine_loop, and its operation utilizes one of the loops selected by comparing the initial time-difference among the reference clock and 2 internal clocks. The 2 internal clock signals are taken, respectively, at the midpoint and endpoint of a VCDL and thus are $180^{\circ}$ separated in phase. When the proposed DLL is out of the conventional lock range, the Coarse_loop is selected to push the DLL in the conventional lock range and then the Fine_loop is used to complete the locking process. Therefore, the proposed DLL is always stably locked in unless it is harmonically false-locked. Since the VCDL employed in the proposed DLL needs two control voltages to adjust the delay time, it uses TG-based inverters, instead of conventional, multi-stacked, current-starved inverters, to compose the delay line. The new VCDL provides a wider delay range than a conventional VCDL In overall, the proposed DLL demonstrates a more than 2 times wider lock range than a conventional DLL. The proposed DLL circuits have been designed, simulated and proved using 0.18um, 1.8V TSMC CMOS library and its operation frequency range is 100MHz${\sim}$1GHz. Finally, the maximum phase error of the DLL locked in at 1GHz is less than 11.2ps showing a high resolution and the simulated power consumption is 11.5mW.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.12
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• pp.452-458
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• 2017

In this study, a device was developed for diagnosing depression using EEG signals from July 2016 to June 2017. For normal people, the left alpha rhythm is more activated than the right alpha rhythm, but for the depressed patients, the right alpha rhythm is more activated than the left one. An analog circuit and digital low pass filter were used for noise removal and amplification of EEG, and the Hamming window function was applied to eliminate the signal leakage generated by the fast Fourier transform. To verify the validity of the developed diagnosis system, the EEG of 20 university students in the 3rd and 4th grade with an average age of 24 years was measured. Calculations of the relative value of the left and right alpha rhythm for the depression diagnosis revealed a minimum, maximum, and mean value of 66.7, 113.3, and 92.2, respectively. In addition, 7 out of 20 subjects were between 90 and 95, and those with a higher mean deviation of approximately 20 tended to have mild depression. These results can provide meaningful data for the development of depression treatment equipment by solving the left and right brain asymmetry problem, and it may be applied usefully to diagnose depression after clinical trials on a large number of depressed patients.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.26-36
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• 2014

The needs of active phased arrays antenna system is getting more increased for IMT-Advanced system efficiency. The active phased array structure consists of lots of small transceivers and radiation elements to increase system efficiency. The minimized module of high efficiency transceiver is key for system implementation. The power amplifier of transmitter decides efficiency of base-station. In this paper, we design and implement minimized module of high efficiency transceiver for IMT-Advanced active phased array system. The temperature compensation circuit of transceiver reduces gain error and the analog pre-distorter of linearizer reduces implemented size. For minimal size and high efficiency, the implented power amplifier consist of GaN MMIC Doherty structure. The size of implemented module is $40mm{\times}90mm{\times}50mm$ and output power is 47.65 dBm at LTE band 7. The efficiency of power amplifier is 40.7% efficiency and ACLR compensation of linearizer is above 12dB at operating power level, 37dBm. The noise figure of transceiver is under 1.28 dB and amplitude error and phase error on 6 bit control is 0.38 dB and 2.77 degree respectively.

• KIPS Transactions on Computer and Communication Systems
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• v.4 no.2
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• pp.57-64
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• 2015

At the case of peak threshold algorithm, 3-axes data should sample step data over 20 Hz to get sufficient accuracy. But most of the digital sensors like 3-axes accelerometer have very low sampling rate caused by low data communication speed on limited SPI or $I^2C$ bandwidth of the low-cost MPU for ubiquitous devices. If the data transfer rate of the 3-axes accelerometer is getting slow, the sampling rate also slows down and it finally degrades the data accuracy. In this study, we proved there is a distinct functional relation between the sampling rate and threshold on the peak threshold step detection algorithm under the 20Hz frequency, and made a threshold function through the experiments. As a result of experiments, when we apply threshold value from the threshold function instead of fixed threshold value, the step detection error rate can be lessen about 1.2% or under. Therefore, we can suggest a peak threshold based new step detection algorithm with threshold function and it can enhance the accuracy of step detection and step count. This algorithm not only can be applied on a digital step counter design, but also can be adopted any other low-cost ubiquitous sensor devices subjected on low sampling rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.63-73
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• 2015

This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.