• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.14-26
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• 2002

A new model for degenerate semiconductor quantum well devices was developed. In this model, the multi-subband Boltzmann transport equation was formulated by applying the Pauli exclusion principle and coupled to the Schrodinger and Poisson equations. For the solution of the resulted nonlinear system, the finite difference method and the Newton-Raphson method was used and carrier energy distribution function was obtained for each subband. The model was applied to a Si MOSFET inversion layer. The results of the simulation showed the changes of the distribution function from Boltzmann like to Fermi-Dirac like depending on the electron density in the quantum well, which presents the appropriateness of this modeling, the effectiveness of the solution method, and the importance of the Pauli -exclusion principle according to the reduced size of semiconductor devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.1-7
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• 2011

In this work, an analytical models for the threshold voltage and flat band voltage have been suggested and proved using 3-dimensional device simulator. The method for device design guideline and its example in nanowire junctionless transistor and example of device design of was also presented. One can find that the suggested model for threshold voltage and flat band voltage agrees with 3-dimension simulation results. The threshold voltage and flat band voltage are decreased with the increase of nanowire radius, gate oxide thickness, and channel impurity doping concentration. When the work function of gate material and the ratio of ON and OFF current is given, the device design guide line for nanowire junctionless transistor has been proposed. It is known that the device with high impurity channel concentration can be fabricated with th decreased of nanowire radius and gate oxide thickness.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.7 s.100
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• pp.871-877
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• 2005

This paper proposes a new modeling scheme to describe the hysteresis between input voltage and displacement of piezoelectric actuators in the inchworm. From the experimental analysis of Piezoelectric actuator behaviors. the hysteresis characteristics including residual displacement can be modeled by second order functions of a maximum Input voltage and preload. Various experiments are performed to demonstrate the effectiveness and validation of the proposed modeling scheme.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.323-324
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• 2017

본 연구는 기계적 특성을 갖는 소나(SONAR, Sound Navigation and Ranging) 트랜스듀서(Transducer)를 BVD(Butterworth Van-Dyke)모델을 기반으로 하는 전기적 등가 회로로 모델링하며 PSO(Particle Swarm Optimization) 알고리즘을 활용하여 상기 등가 모델에 사용되는 전기적 소자들의 소자값을 추출한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.111-118
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• 2003

Notch Antenna is a travelling wave type antenna and can provide multioctave operation in phased arrays that scan over wide angle. In this paper, we designed a wideband E-plane phased array antenna using E-plane waveguide simulator which has a bandwidth of 3 : 1 and a scan volume of $\pm$45$^{\circ}$ in E-plane. We compared impedance of single antenna and infinite array antenna using equivalent circuit modeling. We analyzed full structure of 1$\times$9 phased array antenna and we evaluated active reflection coefficient with variation of beam scan angle through mutual coupling coefficient acquired from simulation and investigated the variation of antenna gain with variation of active element pattern as beam scan angle is varied.

• The Journal of the Acoustical Society of Korea
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• v.21 no.3
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• pp.221-229
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• 2002

In thin paper, error tolerance of each array element which satisfies error tolerance of beam pattern is decided by using the Monte-Carlo method. Conventional deterministic method decides the error tolerance of each element from the acceptance pattern by testing all cases, but this method is not suitable for the analysis of large number of array elements because the computation resources increase exponentially as the number of array elements increases. To alleviate this problem, we applied new algorithm which reduces the increment of calculation time increased by the number of the array elements. We have validates the determined error tolerance region through several simulation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.12
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• pp.4975-4983
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• 2010

In this paper, the ordinariest and strongest simulator that many used to power electronics circuits and many different control technology can apply to more easily understand modeling the element, PSPICE and MATLAB are adapted a micro IGBT, a macro IGBT, PWM generator and to library moeling of validity of the Induction motor is interpreted. Micro IGBT model of demagnetization quality proved for modeling accuracy to through experiment, macromodel IGBT were simulated which the applied to voltage type PWM inverter to the cyclo-converter and induction motor of demagnetization.

• Proceedings of the Korean Nuclear Society Conference
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• 2003.10a
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• pp.184-184
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• 2003

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.417-418
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• 2011

본 논문은 계통연계 형 3-레벨 NPC(Neutral Point Clamped)인버터의 고장진단 방법을 제안한다. 제안하는 고장진단 방법은 스위칭 소자의 개방고장 진단뿐만 아니라 고장 난 스위칭 소자의 위치 또한 판별 할 수 있다. 스위칭 소자의 고장 진단은 콘코디아 변환(Concordia transformation)에 의한 전류패턴의 반지름 변화로 판단 할 수 있다. 고장 난 스위칭 소자의 위치는 기존의 콘코디아 변환(Concordia transformation)에 의한 전류패턴을 분석하는 방법에 간단한 스위칭 동작을 추가함으로써 구분 할 수 있다. 제안하는 기법은 추가적인 센서가 필요하지 않고 전류신호에 기반을 두고 있으므로 시스템의 복잡한 모델링이 필요하지 않은 장점이 있다. 본 논문은 10kW급 태양광 계통연계 시스템을 모의한 시뮬레이션을 바탕으로 제안한 기법의 타당성을 검증한다.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.463-464
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• 2016

본 논문은 압전소자 발전기를 이용하여 하베스팅 에너지 발전량을 증대시키기 위한 에너지 하베스팅 방법을 제안하였다. 기존의 풀브리지 정류기만을 이용한 standard DC 방법에 압전소자와 병렬로 공진을 위한 인덕터와 MOSFET를 연결하여 parallel SSHI 회로를 구성하였으며, 또한 변위센서와 비교기를 통해 스위치 시점을 결정한다. 시뮬레이션 분석을 위해 압전발전기를 등가회로로 모델링하였으며, standard DC방법과 parallel SSHI 방법의 성능을 비교하여 parallel SSHI 방법이 standard DC 방법보다 약 13%의 전력이 증대된 것을 확인 하였다.