• Title/Summary/Keyword: 소자파라미터

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Lumped Model Parameter Estimation of Floating Mass Transducers based on Sequential Quadratic Programming Method for IMEHDs (Sequential Quadratic Programming 방법을 이용한 인공중이용 플로팅 매스 트랜스듀서의 집중 모델 파라미터 추정)

  • Park, I.Y.
    • Journal of rehabilitation welfare engineering & assistive technology
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    • v.5 no.1
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    • pp.59-64
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    • 2011
  • In this paper, the lumped element model parameter estimation method and its implemented estimation software for fabricated floating mass transducers of IMEHDs have been presented so that the estimated parameter values could be compared with the designed ones and applied to predict the output performance when the transducers were implanted into human ears. The presented method is based on the sequential quadratic programming (SQP) for estimating parameters in the transducer's lumped model and has been implemented by the use of LabVIEW graphical language. Using the implemented estimation software, the accuracy of parameter estimation has been verified and our implemented estimation method has been evaluated by the comparison of the estimated transducer parameter values with the designed ones for a practically fabricated floating mass transducer for IMEHDs.

A Technique of Large Signal Modeling of PIN Diode through Measurements (측정을 통한 PIN 다이오드 대신호 모델 구축 기법)

  • Yang, Seong-Sik;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.1
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    • pp.12-20
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    • 2009
  • In this paper, we introduced the large signal model of a PIN diode and presented the measurement methods for each parameter of the large signal model. The elements of the PIN diode model are classified into the elements with a constant value and the elements depending on the junction voltage. We implemented the constant elements by lumped elements and the voltage-dependent elements by a SDD in ADS. The developed large signal model was successfully worked with various circuit simulations, such as simple DC, AC, S-parameter, Transient, and HB simulations. In order to verify the developed large signal model, we compared that the measured results of a limiter and a attenuator with the simulated results using the PIN diode model, which are in good agreement.

Junction Temperature Estimation Method Considering Parameter Change in Accordance with Temperature (온도에 따른 파라미터 변동을 고려한 정션 온도 추정 방법)

  • Yang, Jinkyu;Byun, Sung Hoon;Kim, Jeong Bin;Kim, Young Min
    • Proceedings of the KIPE Conference
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    • 2016.07a
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    • pp.89-90
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    • 2016
  • 인버터에 사용되는 전력용 반도체 소자의 정션 온도는 모듈의 보호 및 수명 예측에 중요한 영향을 미친다. 온도를 추정하기 위해 제조사에서 제공되는 데이터 시트로부터 피라미터를 찾아 입력하게 되는데, 온도, 전류 및 $R_g$ 저항 등의 요인에 의해 이 파라미터가 변경된다. 본 논문은 온도 추정 과정에서 사용되는 파라미터에 온도에 따라 변동되는 성분을 선형화하여 추가하여 현재 온도에 맞는 파라미터를 계산해 낼 수 있는 방법에 관한 것으로 데이터 시트로부터 미리 계산된 계수 값을 이용하여 수식적으로 온도 의존성을 반영할 수 있다.이를 이용하여 부하 전류, 스위칭 주파수, DC Link 전압 등의 변동에 따라 정션 온도를 실시간으로 추정하였으며, iGBT 의 상단에 온도 센서를 부착하여 추정결과를 검증하였다. 본 방법을 통해 파라미터의 온도 의존성을 수식적으로 반영할 수 있으므로 파라미터를 저장하는 인버터의 데이터 저장 공간을 최소화 할 수 있다.

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Measurement of Noise Wave Correlation Matrix for On-Wafer-Type DUT Using Noise Power Ratios (잡음전력비를 이용한 온-웨이퍼형 DUT의 잡음상관행렬 측정)

  • Lee, Dong-Hyun;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.111-123
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    • 2019
  • In this paper, we propose a method for defining the input termination for on-wafer-type device under test (DUT) measurement. Using the newly defined input termination and noise wave correlation matrix (NWCM) measurement method based on noise power ratio, the NWCM of the on-wafer-type DUT was measured. We demonstrate a noise measurement configuration that includes wafer probes and bias tees to measure the on-wafer DUT. The S-parameter of the adapter that combines the bias tee, probe, and a line terminated by open is required to define the input termination for on-wafer DUT measurement. To measure the S-parameter of the adapter, a 2-port S-parameter measurement method using 1-port measurement is introduced. Using the measured S-parameters, a method for defining the new input termination for on-wafer-type DUT measurement is applied. The proposed method involves the measurement of the NWCM of the chip with a 1.5 dB noise figure. The noise parameters of the chip were obtained using the measured NWCM. The results indicate that the obtained values of the noise parameters are similar to those mentioned on a datasheet for the chip. In addition, repeated measurements yielded similar results, thereby confirming the reliability of the measurements.

A Study on the Discrete Time Parameter Adaptive Learning Control System (이산시간 파라미터 적응형 학습제어 시스템에 관한 연구)

  • 최순철;양해원
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.13 no.4
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    • pp.352-359
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    • 1988
  • A learning control system which should have memory elements can be designed by utilizing the concept of parameter adaptation for unknown control object system parameters and regard it as a hybrid adaptive control system. A parameter adaptive learning control system applicable to a continuous time system has been already reported. Since there have been rapid developments in digital technology, it is possible to extend a continuous time parameter adaptive learning control system concept to a discrete time case. This problem is treated in this paper. Its justfication is proved and a simulation shows that this algorithms is effective.

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Equivalent Circuit Model Parameter Extraction for Packaged Bipolar Transistors (패키지된 바이폴라 트랜지스터의 등가회로 모델 파라미터 추출)

  • Lee Seonghearn
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.12
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    • pp.21-26
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    • 2004
  • In this paper, a direct method is developed to extact RF equivalent circuit of a packaged BJT without optimization. First, parasitic components of plastic package are removed from measured S-parameters using open and short package patterns. Using package do-embedded S-parameters, a direct and simple method is proposed to extract bonding wire inductance and chip pad capacitance between package lead and chip pad. The small-signal model parameters of internal BJT are next determined by Z and Y-parameter formula derived from RF equivalent circuit. The modeled S-parameters of packaged BJT agree well with measured ones, verifying the accuracy of this new extraction method.

SPICE Modeling for Thermoelectric Modules (열전 모듈의 SPICE 모델링)

  • Park, Soon-Seo;Cho, Sung-Kyu;Baatar, Nyambayar;Kim, Shi-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.4
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    • pp.7-12
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    • 2010
  • We have developed a SPICE compatible model of thermoelectric devices, and a parameter extracting technique only by electrical and temperature measurement by using Harman method was proposed. The proposed model and parameter extraction technique do not require experimental data from thermal conductivity measurements. The maximum error between extracted parameters extracted by proposed method and conventional method was about 14%, which is not a severe mismatch for real application. The proposed model is applicable to design of both for thermoelectric coolers and thermo electric generators.

Dead Time Compensation Scheme Insensitive to PMSM Parameter Variations (PMSM 파라미터 변화에 영향을 받지 않는 데드타임 보상기법)

  • Park, Dong-Min;Kim, Kyeong-Hwa
    • Proceedings of the KIPE Conference
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    • 2011.11a
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    • pp.69-70
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    • 2011
  • PMSM 구동을 위한 PWM 인버터에서는 DC 링크의 단락으로 인한 스위칭 소자의 파괴를 방지하기 위하여 인버터에 데드타임을 적용하며, 이는 인버터의 출력 전압과 전류 왜곡, 토크 리플을 일으키는 원인이 된다. 이러한 문제를 해결하기 위해 파라미터 변화에 무관한 데드타임 보상기법이 제안되며 제안된 기법의 타당성이 시뮬레이션을 통해 입증된다.

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Design and Implementation of RF Transceiver for WCDM (WCDMA RF송수신기의 설계 및 구현)

  • 강상기;이동한;홍헌진;홍성용
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.53-57
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    • 2001
  • 본 논문에서는 WCDMA 규격[1,2]에 근거하여 WCDMA 기지국 무선부 설계 파라미터들로서, 수신기 잡음 지수(NF:Noise Figure), IIP3(Input 3$^{rd}$ order Intercept Point), ACS(Adjacent Channel Selectivity) 와 Blocking 특성을 만족하기 위한 여파기의 감쇠 특성 및 송신기 전체의 ACLR 특성을 만족하기 위한 송신기 구성 소자의 ACLR 특성 등을 고찰하였으며, 이와 같은 무선부 설계 파라미터를 기본으로 구현한 무선부의 시험 결과를 기술하였다.

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Asymmetric MOSFET 소자의 특성 평가

  • Choe, Pyeong-Ho;Kim, Sang-Seop;Choe, Byeong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.232.1-232.1
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    • 2013
  • 본 연구에서는 asymmetric과 symmetric 구조의 n채널 MOSFET 소자의 성능 평가에 관한 실험을 진행하였다. 소자의 성능 평가에 있어 아날로그 회로에서의 DC 이득은 중요한 파라미터 중 하나 이다. 따라서 본 연구에서는 gm/ID 측정법을 이용하여 각 소자의 DC 이득 특성을 분석하였다. 게이트 전압에 따른 드레인 전류-드레인 전압 특성 곡선으로부터 early voltage 값을 추출하였다. 이후 최종적으로 수치적 계산을 통해 DC 이득 값을 추출하였다. 실험 결과 asymmetric과 symmetric 소자의 경우 early voltage 값이 각각 -34 V와 -15 V였으며 따라서 DC 이득 특성 또한 asymmetric 소자의 경우가 우수한 것을 확인하였다.

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