• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.152-153
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.147-147
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• 2008

• Clean Technology
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• v.16 no.2
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• pp.103-116
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• 2010

It has been reported that the LCD panel market in the FPD industry is become growing and its panel size and production capacity are increasing, and its manufacturing technique is improved every year. FPD manufacturing process requires high cleanliness in its overall process. Especially, FPD cleaning process which accounts for 30~40% of total manufacturing process is very important in its technological and productivity aspects. It is difficult to remove residual liquid-crystal in the fine gap after liquid-crystal injection process in the cell. In this study, aqueous cleaning agents with excellent cleaning, rinsing, and penetrating abilities, but minimum ion content for LCD panel were formulated through mixing glycol ether-type and glycol dimethyl ether-type solvents and nonionic surfactants which are widely used as raw materials for alternative cleaning agents because of environmental regulation at home and abroad. And the formulated cleaning agents were applied to clean FPD liquid crystal after its injection in the cell. Physical properties, cleaning efficiencies, and rinsabilities of the formulated cleaning agents with different combination ratios of solvents, surfactants and additives were measured. As experimental results, the formulated cleaning agents showed higher wetting indices and cloud point than the traditional commercial cleaning agent. And it was found that cleaning efficiencies of the formulated cleaning agents were influenced by the structure of main solvents in them and the types of liquid crystal as soil for cleaning. The best cleaning agents among the formulated cleaning agents showed similar cleaning efficiencies and better rinsabilities compared to the conventional cleaning agent.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.3
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• pp.135-140
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• 2020

Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6⋯., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.

• Korean Chemical Engineering Research
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• v.45 no.2
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• pp.203-207
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• 2007

In this paper efficient method for particle removal from silicon wafers by usage of HF and ozone was studied. It was found that at least 0.3 vol% concentration of HF was required for particle removal and removal efficiency increased with the application of megasonic in ozonated water. Additional cleaning with minute amount of ammonia (0.01 vol%) after HF/Ozone step showed over 99% in removal efficiency. It is proposed that the superior cleaning efficiency of HF-Ozone-ammonia is due to micro-etching of silicon surface and impediment of particle re-adsorption in alkali environment. Compared to SC-1 cleaning method micro roughness has also been slightly improved. Therefore it is expected that HF-ozone-ammonia cleaning method is a viable alternative to the conventional wet cleaning methods.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.42 no.5
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• pp.31-40
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• 2005

In this study, we study measurement of wafer processing throughput and sequence simulation of single wafer type for wafer cleaning equipments that were used for etching, cleaning and polishing of wafer. Based on finite state machine, simulation model was built with identification of robot's status according to scheduling algorithm. Moreover, through performance of simulation as above, throughput per hour of cleaning equipment was measured. By the simulation method that are proposed in this paper, we could measure the wafer throughput per hour according to recipe and robot motion speed, and find optimal recipe and moving sequence of robot that maximize the throughput.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.25-30
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• 2009

We have developed recycling technology of ethylen carbonate to use in photoresist stripping and cleaning process, which will be core processing technology for high performance and low price semiconductor and LCD fabrication. Using this technology, it is possible for semiconductor wafer and LCD planer to process more rapid and chip, and productivity will be improved.

• Journal of Intelligence and Information Systems
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• v.15 no.4
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• pp.213-224
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• 2009

This paper describes a real-time scheduling system re-construction project for automated manufacturing at a 300mm wafer fab of Korean semiconductor manufacturing company. During executing this project, for each main operation such as clean, diffusion, deposition, photolithography, and metallization, each adopted scheduling algorithm was developed, and then those were implemented in a real-time scheduling system. In this paper, we focus on the scheduling algorithms and real-time scheduling system for clean and diffusion operations, that is, a serial-process block with the constraint of limited queue time and batch processors. After this project was completed, the automated manufacturing utilizations of clean and diffusion operations became around 91% and 83% respectively, which were about 50% and 10% at the beginning of this project. The automated manufacturing system reduces direct operating costs, increased throughput on the equipments, and suggests continuous and uninterrupted processings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2525-2531
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• 2012

Al-Cu alloy has been used as a circuit material for its low resistance and ease to process for long years at CMOS technology. However, basically metal is very susceptible to corrosion and which has been a long pending trouble in various fields using metal. The defect causes the reliability concerns, so improved methods are necessary to reduce the defect. In the various corrosion parameters, PR strip process conditions after metal etch and optimal cleaning solutions are controllable and increase the process margin to prevent the metal corrosion. This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing PR strip process condition and cleaning condition.

• Clean Technology
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• v.23 no.1
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• pp.34-41
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• 2017

The scrubber wastewater should be replaced frequently to maintain efficiency. Most chemical companies consign scrubber wastewater, because there are no wastewater treatment facilities. So scrubber wastewater is not frequently replaced because of high treatment cost. For this reason, the most scrubber exhaust gas exceeds the odor emission limit or has a phenomenon that the odor intensity of exhaust gas becomes higher. Therefore we have developed a scrubber wastewater cleaning system consisting of filtration and adsorption processes. The scrubber wastewater cleaning system was applied two chemical companies. We evaluated the water quality and odor reduction effect before and after system application. As a result, scrubber wastewater quality improved by 50% or more, odor reduction efficiency of scrubber exhaust gas improved by 20% or more. And the total operating costs of the scrubber could be reduced by 40% or more.