• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.11B
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• pp.980-990
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• 2004

In this paper, we propose the dynamic bandwidth allocation algorithm for the IEEE802.3ah Ethernet Passive Optical Network(EPON) system to provide the fairness among terminals, and evaluate the delay-throughput performance by simulation. For the conventional EPON systems, an Optical Line Termination (OLT) schedules the upstream bandwidth for each Optical Network Unit (ONU), based on its buffer state. This scheme can provide a fair bandwidth allocation for each ONU. However, it has a critical problem that it does not guarantee the fair bandwidth among terminals which are connected to ONUs. For an example, we assume that the traffic from a greedy terminal increases at a time. Then, the buffer state of its ONU is instantly reported to the OLT, and finally the OW can get more bandwidth. As a result, the less bandwidth is allocated to the other ONUs, and thus the transfer delay of terminals connected to the ONUs gets inevitably increased. Noting that this unfairness problem exists in the conventional EPON systems, we propose a fair bandwidth allocation scheme by OLT with considering the buffer state of ONU as welt as the number of terminals connected it. For the performance evaluation, we develop the EPON simulation model with SIMULA simulation language. From the result of the throughput-delay performance and the dynamics of buffer state along time for each terminal and ONU, respectively, one can see that the proposed scheme can provide the fairness among not ONUs but terminals. Finally, it is worthwhile to note that the proposed scheme for the public EPON systems might be an attractive solution for providing the fairness among subscriber terminals.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.462-467
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• 2015

Pellicle is defined as a thin transparent film stretched over an aluminum (Al) frame that is glued on one side of a photomask. As semiconductor devices are pursuing higher levels of integration and higher resolution patterns, the cleaning of the Al flame surface is becoming a critical step because the contaminants on the Al flame can cause lithography exposure defects on the wafers. In order to remove these contaminants from the Al frame, a highly concentrated nitric acid ($HNO_3$) solution is used. However, it is difficult to fully remove them, which results in an increase in the Al surface roughness. In this paper, the pellicle frame cleaning is investigated using various cleaning solutions. When the mixture of sulfuric acid ($H_2SO_4$), hydrofluoric acid (HF), hydrogen peroxide ($H_2O_2$), and deionized water with ultrasonic is used, a high cleaning efficiency is achieved without $HNO_3$. Thus, this cleaning process is suitable for Al frame cleaning and it can also reduce the use of chemicals.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.158-163
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• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.5-10
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• 2010

Among a variety of cleaning processes, the cryogenic carbon dioxide ($CO_2$) cleaning has merits because it is highly efficient in removing very fine particles, innoxious to humans and does not produce residuals after the cleaning, which enables us to extend its area of coverage in the semi-conductor fabrication society. However, the cryogenic carbon dioxide cleaning method has some technical research issues in aspect to particles' adhesion and removal. To resolve these issues, performing an analysis for the identification of particle adhesion mechanism is needed. In this study, a research was performed by a theoretical approach. To this end, we extended the G-T (Greenwood-Tripp) model by applying the JKR (Johnson-Kendall-Roberts) and Lennard-Jones potential theories and the statistical characteristics of rough surface to investigate and identify the contact, adhesion and deformation mechanisms of soft or hard particles on the rough substrate. The statistical characteristics of the rough surface were taken into account through the employment of the normal probability distribution function of the asperity peaks on the substrate surface. The effects of surface roughness on the pull-off force for these particles were examined and discussed.

• Journal of Korean Society of Water and Wastewater
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• v.22 no.4
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• pp.429-436
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• 2008

Membrane system has been increasingly considered as a safe and cost-effective water treatment process especially in case of small scale water works. This research is a basis of membrane application in water works through a long period test with obtaining operation skills and evaluation of water quality and cost competitiveness. For the research, the UF membrane system was installed in small water treatment plant that uses river-bed water as raw water. The system was consisted of 2 stage membrane and operated in constant flow mode (Flux: 1.5, 1.0, 0.9, 0.6). In each different flux condition, TMP trends were showed better results at lower flux condition. And through the high flux condition test, it is certified that membrane system could deal with breakdown of one stage. Water quality of permeate was satisfied the water quality standards especially turbidity. To know what mainly causes fouling on membrane, the test by membrane with several cleaning agents and EDX analysis have done in lab. Through the tests, ferrous concentration in raw water, backwashing water and membrane surface etc. was high and it causes fouling inside and outside of membrane. So acid cleaning using organic acid such as oxalic acid is necessary in Chemical in Place (CIP). At the economical aspect the electrical cost of membrane system is higher than that of slow sand filtration but labor cost can be reduced by automation. However, the use of labor should be determined considering effectiveness and stability of operation. Because during the operation, there are several breakdown such as electrical shock by lightning, water drop in summer, etc.

• Membrane Journal
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• v.18 no.1
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• pp.35-43
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• 2008

In this study, we tried to solve membrane fouling with membranes made by fine nano-particle in MBR process. And we confirmed good fouling resistance in pilot test. In this test, we confirmed our membrane with titania out-standing quality by testing in the pilot long-term test by comparing to other company product. Our membrane keep up steadily $20{\sim}25 L/m^2{\cdot}hr$ high flux in $7,000{\sim}13,000mg/L$ MLSS high sludge concentration. In addition to this quality, we studied membrane flux character related membrane arrangement, membrane-air line arrangement, air-line hole size, cleaning solution concentration, treatment method, etc. Using the optimization of this additional parameter, we tried to search method of maximizing membrane quality.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.67.2-67.2
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• 2017

본 연구에서는 $SiO_2$ 미세구조 상에 Pd 나노입자(NPs)를 증착하여, 불소화된 마이크로-나노 계층구조를 갖는 Pd-decorated $SiO_2$($Pd/SiO_2$)를 제작하였다. 마이크로 크기의 거칠기를 갖는 $SiO_2$ 층은 졸-겔 공정을 사용해서 제조된 용액을 전기분사함으로써 제조되었다. 이어서, 자외선(UV)을 이용한 광 환원법을 이용해 Pd 나노입자를 $SiO_2$ 층에 형성했다. 생성된 표면은 마이크로-나노의 계층구조 형태를 보여주었다. 해당 시편의 불소화 처리 후, 마이크로-나노의 계층구조 표면은 $170^{\circ}$ 이상의 물 접촉각(water contact angle; WCA) 및 $5^{\circ}$ 이하의 슬라이딩 각(sliding angle)을 보여줌으로써 물에 대해 탁월한 소수성을 나타내었다. 또한, 커피($CA=161^{\circ}$), 우유($CA=162^{\circ}$), 쥬스($CA=163^{\circ}$), 그리고 글리세롤($CA=165^{\circ}$)에 대해서도 우수한 소수 특성을 보여주었다. 또한, 이들 $Pd/SiO_2$ 층은 우수한 장기내구성 및 자외선 저항성을 보여주었다. 그리고 이어진 기름에 대한 접촉각 측정을 통해 해당 시편이 소유 특성이 아닌 친유 특성을 보여준다는 것을 확인할 수 있었고, 기름에 대한 CA는 약 ${\sim}10^{\circ}$로 매우 우수한 친유 특성을 나타내었다. 이와 같은 결과는 자체세정이 가능한 표면 및 지능형 물/기름 분리 시스템과 같은 스마트 장치에서 초소수성-친유성 특성을 갖는 계층구조의 $Pd/SiO_2$ 층을 사용할 가능성을 명확하게 보여준다고 판단된다.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.423-428
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• 2010

This study shows the effects of deionized (DI) rinse and oxide HF wet etch processes on silicon substrate during a photolithography process. We found a fail at the wafer center after DI rinse step, called Si pits, during the fabrication of a complementary metal-oxide-semiconductor (CMOS) device. We tried to find out the mechanism of the Si pits by using the silicon wafer on CMOS fabrication and analyzing the effects of the friction charge induced by the DI rinsing. The key parameters of this experiment were revolution per minute (rpm) and time. An incubation time of above 10 sec was observed for the formation of Si pits and the rinsing time was more effective than rpm on the formation of the Si pits. The formation mechanism of the Si pits and optimized rinsing process parameters were investigated by measuring the charging level using a plasma density monitor. The DI rinse could affect the oxide substrate by a friction charging phenomenon on the photolithography process. Si pits were found to be formed on the micro structural defective site on the Si substrate under acceleration by developed and accumulated charges during DI rinsing. The optimum process conditions of DI rinse time and rpm could be established through a systematic study of various rinsing conditions.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.429-433
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• 2014

As the fabrication technology used in FPDs(flat-panel displays) advances, the size of these panels is increasing and the pattern size is decreasing to the um range. Accordingly, a cleaning process during the FPD fabrication process is becoming more important to prevent yield reductions. The purpose of this study is to develop a FPD cleaning system and a cleaning process using a two-phase flow. The FPD cleaning system consists of two parts, one being a cleaning part which includes a two-phase flow nozzle, and the other being a drying part which includes an air-knife and a halogen lamp. To evaluate the particle removal efficiency by means of two-phase flow cleaning, silica particles $1.5{\mu}m$ in size were contaminated onto a six-inch silicon wafer and a four-inch glass wafer. We conducted cleaning processes under various conditions, i.e., DI water and nitrogen gas at different pressures, using a two-phase-flow nozzle with a gap distance between the nozzle and the substrate. The drying efficiency was also tested using the air-knife with a change in the gap distance between the air-knife and the substrate to remove the DI water which remained on the substrate after the two-phase-flow cleaning process. We obtained high efficiency in terms of particle removal as well as good drying efficiency through the optimized conditions of the two-phase-flow cleaning and air-knife processes.

• Proceedings of the KAIS Fall Conference
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• 2004.11a
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• pp.99-102
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• 2004

Display process has adopted RCA clean, being applied to large area and coped with environmental issue for last ten years. However, the approaching concept of ozonized, hydrogenised, or electrolyzed water cleaning technologies is within RCA clean paradigm. In this work, only electrolyzed anode water was applied to clean particles and organics as well as metals based on Pourbaix concept, and as a test vehicle, MgO particles were introduced to prove the new concept. The electrolyzed anode water is very oxidative with high oxidation reduction potential(ORP) and low in pH of more than 900mV and 3.1, respectively. MgO particles were immerged in the anode water and its weight losses due to dissolution were measured with time. Weight losses were in the ranges of 100 to 500 micrograms in 250m1 anode waters depending on their ORP and pH. Therefore it was concluded that the cleaning radicals in the anode water was at least in the range of 1 to 5E20 ea per 250 ml anode water equivalent to IE18 ea/cm3. Hence it can be assumed that the anode water be applied to display cleaning since 1E10 to IE15 ea/cm3 ranges of contaminants are being treated. In addition, it was observed that anode water does not develop micro-roughness on hydrophobic surface while it does on the native silicon oxide.