• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.619-623
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• 2006

The most important factor which determines resonance characteristics of FBAR(Film Bulk Acoustic Resonator) is the piezoelectricity of piezoelectric film. The piezoelectric properties of ZnO thin films which is strong as FBAR piezoelectric film is determined by the degree of c-axis preferred orientation with (002) plan. Therefore, many researchers have been interested in the study on the preferred orientation of the piezoelectric thin film. This paper has studied the preferred orientation of ZnO piezoelectric thin films using the helped seed layer of ZnO. The result shows that the c-axis ZnO thin films with columnar grains that the value of standard $deviation(\sigma)$ of XRD rocking curve is of $\sigma=1.15^{\circ}$ have the excellent piezoelectric property.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.179-179
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• 2010

1차원 나노구조를 갖는 ZnO를 성장하기 위해 Laser ablation, Chemical vapor deposition (CVD), Chemical transport method, Molecular beam epitaxy, Sputtering 등의 다양한 형성법들이 이용되어지고 있다. 특히 대량생산과 경제성 측면에서 많은 장점을 가지고 있는 CVD를 이용한 ZnO 성장 및 응용 연구가 활발하게 수행되고 있다. 본 연구에서는 Thermal CVD를 이용하여 반응물질과 기판 사이의 거리, 기판온도, $O_2$/Zn 비율 등의 성장변수를 변화시켜 ZnO 나노구조를 성장하고 구조 및 광학적 특성을 연구하였다. Scanning electron microscope를 통한 구조 특성평가 결과 반응물질과 기판 사이의 거리가 13 cm 이하의 조건에서 ZnO 나노구조들은 나노판(Nanosheet)과 나노선(Nanowire)이 혼재하여 성장된 것을 보였다. 그리고 반응물질과 기판사이의 거리가 15 cm 이상부터 나노판이 없어지고 수직한 ZnO 나노막대(Nanorod)가 형성되었다. 상온 Photoluminescence 스펙트럼에서 반응물질과 기판사이의 거리가 5에서 15 cm로 증가할수록 결함 (Defect)에 의해 발생된 515 nm 파장의 최대세기 (Maximum intensity)가 10배 이상 감소한 반면, ZnO 나노구조에 의한 378 nm 파장의 NBE발광 (Near band edge emission)은 8배 이상 증가하였다. 이러한 구조 및 광학적 결과로부터, 질서 없이 성장된 것보다 수직 성장된 ZnO 나노구조의 결정질(Crystal quality)이 좋은 것을 확인하였다. 이를 바탕으로 성장변수에 따른 ZnO 나노구조의 형성 메커니즘을 Zn와 O 원자의 성장거동을 기반으로 한 모델을 이용하여 해석하였다.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.639-643
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• 2011

Zinc oxide as an optoelectronic device material was studied to utilize its wide band gap of 3.37 eV and high exciton biding energy of 60 meV. Using anti-site nitrogen to generate p-type zinc oxide has shown a deep acceptor level and low solubility. To increase the nitrogen solubility in zinc oxide, group 13 elements (aluminum, gallium, and indium) was co-added to nitrogen. The effect of aluminum on nitrogen solubility in a $3{\times}3{\times}2$ zinc oxide super cell containing 72 atoms was investigated using density functional theory with hybrid functionals of Heyd, Scuseria, and Ernzerhof (HSE). Aluminum and nitrogen were substituted for zinc and oxygen sites in the super cell, respectively. The band gap of the undoped super cell was calculated to be 3.36 eV from the density of states, and was in good agreement with the experimentally obtained value. Formation energies of a nitrogen molecule and nitric oxide in the zinc oxide super cell in zinc-rich conditions were lower than those in oxygen-rich conditions. When the number of nitrogen molecules near the aluminum increased from one to four in the super cell, their formation energies decreased to approach the valence band maximum to some degree. However, the acceptor level of nitrogen in zinc oxide with the co-incorporation of aluminum was still deep.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.818-822
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• 2011

ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.28 no.1
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• pp.15-30
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• 2002

최근 화장품 사용인구의 증가와 안전성에 대한 관심 증대에 따라 화장품 중 유해성분 함유에 대한 논란이 종종 있어왔다. 화장품에 대한 전문적 지식이 없는 사람들에 의하여 진행된 잘못된 정보로 인하여 화장품 중에 포함된 모든 중금속이 인체에 심각한 영향을 초래한다는 등의 오해를 불러와 관련 업계에 적지 않은 피해를 주기도 하였다. 이에 본 자료에서는 구체적 근거자료와 연구 논문들을 기반으로 유해한 중금속, 안전하여 사용이 공인된 중금속 등을 조사하여 화장품에서의 중금속의 개념을 정립하고자 하였다. 국내에서는 식품의약품안전청 고시 제2000-27호에 화장품에 포함되었을 때 유해한 중금속으로 납, 비소 및 수은을 명시하고 그 규제농도를 규정하고 있다. 규제 중금속은 아니지만 피부에 알러지를 일으키는 중금속으로는 니켈이 있는데 화장품 중 몇몇 제품군에서 소량(수∼수십ppm) 이 검출되기도 한다. 그러나 이는 일상으로 사용하는 각종 귀금속, 시계, 안경테, 클립, 지퍼 등의 금속 용품에 포함된 니켈의 양(수∼수십%)에 비하여 매우 적은 양이며 정상적인 사람에게는 무해하다. 실제 대다수의 니켈 알러지는 화장품이 아닌 귀금속이나 시계 등의 금속류 제품 등에 의하여 유발된다. 또한 많은 종류의 중금속 화합물이 화장품 원료로 사용되고 있다. 전세계적으로 널리 사용되는 것으로 크롬, 망간, 비스머스, 구리, 철, 코발트, 티타늄, 아연 등의 화합물이 있으며 이들은 각종 화장품 공정서 및 원료집 등에 수재되어 사용되고 있다. 이들 중 코발트와 크롬이 피부에 유해하다는 몇몇 보고가 있지만, 이는 이들 원소의 수용성염형태의 특정 화합물인 cobalt chloride와 chromate 및 dichromate의 염에 관한 것으로 화장품에서 사용되는 불용성 산화물인 cobalt aluminum oxide, cobalt titanium oxide, cobalt blue, chromium oxde greens 및 chromium hydroide green 등, 국제적으로 널리 사용되는 안전한 중금속 화합물과는 그 특성 및 독성이 판이하게 다르다. 따라서 화장품에서는 매우 안전한 중금속 화합물만이 사용된다. 업계는 유해 중금속에 관해서는 규제에 입각한 엄격한 품질관리에 힘쓰고 중금속의 화학적 분자구조(수용성염 vs 불용성산화물)를 구별할 수 있는 분석방법 개발에 주력하여야 한다. 그리고 안전한 화장품을 사용하고자 하는 소비자의 욕구를 충족시키고 잘못된 인식과 보도로 인하여 안전한 화장품이 유해한 것으로 오도되는 것을 막아야 할 것이다.

• Journal of Integrative Natural Science
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• v.14 no.1
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• pp.1-5
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• 2021

A zinc oxide thin film was made by varying the deposition time on the silicon(110) substrate by using a radio frequency sputtering time of 60 minutes, 120 minutes and 180 minutes. As a result of analyzing the grain growth surface of the ZnO₂ thin film using an X-ray diffraction apparatus, the directions of the main growth plane (002) and (103) planes of the thin film were significantly affected by the deposition time. As a result of observing the particle growth of the ZnO₂ thin film through an electron scanning microscope, it was observed that in the initial stage of deposition of the ZnO₂ thin film, an incubation time was required during which growth was stagnant, and then particle growth occurred again after a certain period of time. As a result of chemical analysis of the ZnO₂ thin film, the increase in the deposition time did not change with the amount of oxygen in the ZnO₂ thin film, but a change in the composition of Zn was observed, indicating that the deposition time of the thin film had an effect on the Zn component in the thin film.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.6
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• pp.549-558
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• 2018

The overall efficiency depend on the overpotential of the oxygen evolution reaction in alkaline water electrolysis. Therefore, it is necessary to research to reduce the oxygen evolution overpotential of electrodes. In this study, Ni-Zn-Fe electrodes were prepared by electroplating and the surface area was increased by Zn leaching process. Electroplating variables were studied to optimize the plating parameters(electroplating current density, pH value of electroplating solution, Ni/Fe content ratio). Ni-Zn-Fe electrode, which is electroplated in a modified Watts bath, showed 0.294 V of overpotential at $0.1A/cm^2$. That result is better than that of Ni and Ni-Zn plated electrodes. As the electroplating current density of the Ni-Zn-Fe electrode increased, the particle size tended to increase and the overpotential of oxygen evolution reaction decreased. As reducing pH of electroplating solution from 4 to 2, Fe content in electrode and activity of oxygen evolution reaction decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Journal of IKEEE
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• v.27 no.1
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• pp.30-37
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• 2023

To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.