• 제목/요약/키워드: 사파이어 웨이퍼

검색결과 42건 처리시간 0.031초

피코초 펄스 레이저를 이용한 사파이어 웨이퍼 스크라이빙에 관한 연구 (A Study on Sapphire Wafer Scribing Using Picosecond Pulse laser)

  • 문재원;김도훈
    • 한국레이저가공학회지
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    • 제8권2호
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    • pp.7-12
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    • 2005

  • The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

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나노초 펄스 레이저 응용 사파이어/실리콘 웨이퍼 미세 드릴링 (Laser Micro-drilling of Sapphire/silicon Wafer using Nano-second Pulsed Laser)

  • 김남성;정영대;성천야
    • 한국정밀공학회지
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    • 제27권2호
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    • pp.13-19
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    • 2010

  • Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.

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