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Laser Micro-drilling of Sapphire/silicon Wafer using Nano-second Pulsed Laser  

Kim, Nam-Sung (Application Lab. of EOTechnics)
Chung, Young-Dae (Application Lab. of EOTechnics)
Seong, Chun-Yah (Application Lab. of EOTechnics)
Publication Information
Journal of the Korean Society for Precision Engineering / v.27, no.2, 2010 , pp. 13-19 More about this Journal
Abstract
Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.
Keywords
Laser Drilling; Sapphire Wafer; Silicon Wafer; LED(Light Emitted Diode); TSV (Through Silicon Viahole);
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