• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.7
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• pp.777-787
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• 2012

The transient analysis for the output voltage of a piezoresistive microaccelerometer takes a relatively high computation time because at least two iterations are required to calculate the piezoresistive-structural coupled response at each time step. In this study, the high computational cost for calculating the transient output voltage is considerably reduced by an approach integrating the mode superposition method and the least square method. In the approach, data on static displacement and output voltage calculated by piezoresistive-structural coupled simulation for three acceleration inputs are used to develop a quadratic regression model, relating the output voltage to the displacement at a certain observation point. The transient output voltage is then approximated by a regression model using the displacement response cheaply calculated by the mode superposition method. A high-impact microaccelerometer subject to several types of acceleration inputs such as 100,000 G shock, sine, step, and square pulses are adopted as a numerical example to represent the efficiency and accuracy of the suggested approach.

• Journal of the Institute of Convergence Signal Processing
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• v.12 no.4
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• pp.291-297
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• 2011

In this paper, the differential quantized method and the parallel method to reduce the size of ROM in the direct digital frequency synthesizer(DDFS) is proposed And we design the DDFS by FPGA The new ROM compression method can reduce the ROM size by using the two ROM. The quantized value of sine is saved by the quantized-ROM(Q-ROM) and the differential ROM(D-ROM). Also we design the phase-to-sine converter using the phase accumulator of parallel type for generating the high frequency. So the total size of the ROM in the proposed DDFS is significantly reduced compared to the original ROM The ROM compression ratio of 67.5% is achieved by this method. Also, the power consumption is decreased according to the ROM size reduction and we can design the DDFS generating the high frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.214-215
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• 2011

RF 플라즈마의 경우 일반적인 싱글 랑뮤어 프루브를 사용하여 I-V 파형을 구하는 경우에, 우리는 시평균한 값만을 구할 수 있다. 일반적인 플라즈마 반응 챔버의 구조상, 양 전극의 크기가 다르기 때문에, 시간에 따라 진동하는 플라즈마 포텐셜의 형태는 정확한 사인파의 형태가 아니다. 그렇기 때문에 플라즈마 포텐셜에 따라서 진동하는 데이터를 시평균한 값에는 DC 오프셋 성분이 나타난다. 이러한 DC 오프셋값은 랑뮤어 프루브를 통한 플라즈마 포텐셜 측정시에 오차로 나타난다. 우리는 DC 오프셋에 의한 에러값을 보정하기 위해 멀티 프루브를 사용할 수 있다. 가장 흔하게 쓰이는 듀얼 랑뮤어 프루브의 경우를 살펴보면, 내부의 전원이 플로팅되어 있으며 전압인가를 위한 회로 또한 접지에서 절연되어 있기 때문에, 플라즈마 포텐셜이 시간에 따라 흔들려도 전체적인 전위가 플라즈마 포텐셜과 함께 움직이기 때문에, 앞에서 말한 DC 오프셋에 의한 오차를 줄일 수있다는 장점이 있다. 그러나, 이를 위하여는 회로의 절대적인 플로팅이 필요하지만 실제 듀얼 랑뮤어 프루브의 전원 회로를 구현시에는, 트랜스포머 등을 사용하여 회로를 절연시켜도 회로에 기생적으로 발생하는 콘덴서 성분 때문에 플로팅에 영향을 받을 수 있다. 또한 양극과 음극 사이의 내부 임피던스가 다르게 나타난다. 실제로 기존의 듀얼 랑뮤어를 가지고 RF 플라즈마를 측정할 때에, 듀얼 랑뮤어 프루브의 두 팁 간에 서로 다른 전압-전류 파형이 나타나곤 한다. 이러한 두 팁간의 전압-전류 파형의 차이는 두 팁이 물리적으로 완전히 동일한 구조를 가질 수 없기 때문에 발생 하기도 하지만, 위에서 밝힌 원인에 의해서도 발생한다. 이로 인하여 듀얼 랑뮤어 프루브에 의한 I-V 파형은 이론 상 원점을 대칭으로 한 기함수의 형태이어야 하는데, 실제 측정 결과를 보면 이러한 대칭 형태의 모양을 보기 힘들다. 우리는 이에 이를 보정하기 위하여 위상이 180도 차이가 나는 두 개의 삼각파 발생 전원을 각각 듀얼 랑뮤어 프루브의 양 팁에 인가하여 두 팁 간의 내부 저항과 기생 임피던스 등을 일치시킨 프루브를 디자인하였으며 이 프루브를 이용한 실험에서, 비교적 완벽하게 원점에 대하여 대칭하는 I-V 커브를 구할 수 있었다. 이에 이 논문에서는 새로운 회로와 이 회로로 이루어진 듀얼 랑뮤어 프루브를 사용하여 플라즈마를 진단하는 방법에 대하여 기술한다.

• Analytical Science and Technology
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• v.13 no.6
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• pp.775-780
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• 2000

The electrical conductivity of glass melter at high temperature has been measured. The conductivity is an important physical property for the research and the manufacturing process of glass. Because high temperature is an inconvenient situation to measure the conductivity of glass melter, we have made a platinum crucible and electrode and have measured the conductivity at high temperature. KCl solution, of which concentration is adjusted to the conductivity of glass melter, is used to get parameters of the conductivity cell. A measuring circuit is composed with an AC 1 kHz sine wave generator and an operational amplifier. The cell constants are determined from the measured voltages and the equivalent conductances of KCl solution. Various cells are tested to find a suitable shape for high temperature experiment. The results are compared by cell size, electrode depth, and cell configuration. The conductivity of the borosilicate melter is $0.053{\Omega}^{-1}cm^{-1}$ at $1,450^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.29 no.3
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• pp.99-103
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• 2018

Optical coherence elastography (OCE) is based on optical coherence tomography (OCT), which is a noninvasive, high-resolution, cross-sectional imaging technique. In this paper, we have developed dynamic optical coherence elastography to measure elasticity, a mechanical property of tissue, by phase difference. A piezoelectric actuator was used for sinusoidal mechanical loading of samples. Before applying this method to biomaterial, we assessed the feasibility of OCE with samples of sponge, eraser, and sharp lead. Cross-sectional and phase-difference images of the sample were obtained under sinusoidal loading. The strain rate was calculated from the phase-difference information. To obtain the envelope of the phase-difference oscillations along the horizontal direction, Hilbert transformation was performed at each depth. The elevation of the envelope was represented by color mapping, and we could measure the relative elasticity within the sample by comparing the elevations. Finally, there was an advantage when we calculated the shear rate using self-interference in the sample arm, instead of the interference between sample and reference arms.

• Journal of the Korean Magnetics Society
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• v.25 no.1
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• pp.1-3
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• 2015

We demonstrate here an optical measurement technique to quantify the spin-orbit torques. The magnetization dynamics induced by the spin-orbit torques with a sinusoidal current injection is measured by use of polar magneto-optical Kerr effect. The measured signal is then analyzed based on the Landau-Lifhshitz-Gilbert equation with consideration of the spin-orbit torques. The present measurement technique is applied to Pd/Co/Pt films and then, the longitudinal and transverse components of the spin-orbit torques are successfully quantified. The present optical technique provides an alternative way to quantify the spin-orbit torques.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.519-519
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• 2013

본 연구에서는, 전기적 충격이 없고 넓은 면적을 동시에 처리할 수 있는 형태의 유전체 장벽 방전(DBD: Dielectric Barrier Discharge)을 이용한 대기압 저온 플라즈마 장치를 제작하고 이를 이용하여 빵 곰팡이(Neurospora crassa) 살균에 대한 기본 분석을 하였다. 실험에 사용한 저온 대기압 면방전 플라즈마의 파워는 사인파 교류전압을 인가하여, 방전전압은 1.4~2.3 kV, 방전전류는 20~30 mA의 값을 가지며, 전압과 전류의 위상차는 약 80도의 기울기 차이가 난다. 이때의 출력은 약 4 W를 가지며, 공랭식 쿨러를 이용하여 유전체의 열을 배출하였다. 시료대의 온도 측정결과 방전과 동시에 쿨러를 작동할 경우 최대 10분에서 37도를 넘지 않았다. 장치에서 발생하는 플라즈마에 의한 O3의 양은 플라즈마 발생부로부터 10 mm 이내에서 약 25~30 ppm 이 측정되었으며, NO나 NO2 는 거의 검지되지 않았다. 증류수(Deionized water)속에 담긴 빵 곰팡이(Neurospora crassa) 포자를 면방전 플라즈마 발생장치로 처리하였을 때, 포자의 발아율은 처리시간 및 출력파워가 증가함에 따라 급격히 감소하였으나 VM (Vogel's Minimal) 배양액에 넣고 플라즈마 처리를 한 경우에는, 증류수의 결과와 달리 살균효과가 미비함을 보였다. MTT 측정법 또한 같은 경향성을 보였으며, 이를 통해 포자를 둘러싸고 있는 환경이 플라즈마의 살균효과에 영향을 미치는 것으로 보인다. 본 실험을 통해, 유전체 장벽을 이용한 면방전 플라즈마 발생장치가 플라즈마 제트(jet)와 달리 직접적인 플라즈마 접촉 없이도 미생물 살균이 가능하다는 것을 보았으며, 처리대상의 생체용액과 같은 주변 환경에 영향을 받음을 알 수 있었다. 또한 면방전 플라즈마 장치로부터 발생하는 O3과 같은 활성종들이 빵 곰팡이의 비활성화에도 역할을 할 수 있음을 알 수 있었다.

• The Journal of Korean Association of Computer Education
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• v.10 no.6
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• pp.69-77
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• 2007

In this paper we implement main functions of electronic measuring devices, which are essential to design electric/electronic virtual laboratories on the Web. The implemented virtual electronic measuring devices such as virtual analog multimeter(VAM), virtual function generator(VFG), virtual oscilloscope(VOSC) enable the learners to perform the virtual experiments on the Web by simple mouse clicks. In order to show their validity virtual experiments for understanding how to use them are designed. The virtual experiments for measuring resistance(OHM), AC/DC Voltage(ACV/DCV) and DC Current(DCA) by the VAM are illustrated. In addition, the learners can change the frequency of the signal generated from the VFG and measure by the VOSC several types of the signals generated from the VFG such as triangular, pulse, sinusoidal waveforms. The VOSC can measure voltage and current through two channels of it and provide the learners with additional functions such as zooming, trigger, cursor, summing of waveforms. Since the virtual electronic measuring devices have been implemented as forms of Java classes, various types of applications are available according to the structures of virtual laboratories.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.1-9
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• 2012

Memristor which is known as fourth basic circuit element has been developed recently but its electrical characteristics are not still fully understood. Memristor has the incremental and decremental feature of the resistance depending upon the connected polarities. Also, its operational behavior become diverse depending on its connection topologies. In this work, electrical characteristics of diverse types of serial and parallel connections are investigated using the HP $TiO_2$ model. The characteristics are analyzed with pinched hystersis loops on the V-I plane when sine input signal is applied. The results of the work would be utilized usefully for analyzing the characteristics of memristor element and applications to logic circuit and neuron cells.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.10
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• pp.1179-1182
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• 2016

In this paper, a new method to reduce the size of ROM in the direct digital frequency synthesizer (DDFS) is proposed. This method use the sine-linear phase difference method and differential PCM. The new ROM compression method can reduce the ROM size by using the two ROM. The quantized value of sine-linear phase difference is saved by the ROM1 of the $2^N$ sample period. The ROM2 save the difference between the original sine-linear phase difference value and the saved sample value of the ROM1. The ROM compression ratio of 37% is achieved by this method. Also, the power consumption is decreased according to the ROM size reduction.