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Analysis of Electrical Features of Serially and Parallelly connected Memristor Circuits  

Budhathoki, Ram Kaji (Electronic and Information Engineering Faculty,Chonbuk National University)
Sah, Maheshwar Pd. (Electronic and Information Engineering Faculty,Chonbuk National University)
Kim, Ju-Hong (Electronic and Information Engineering Faculty,Chonbuk National University)
Kim, Hyong-Suk (Electronic and Information Engineering Faculty,Chonbuk National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.49, no.5, 2012 , pp. 1-9 More about this Journal
Abstract
Memristor which is known as fourth basic circuit element has been developed recently but its electrical characteristics are not still fully understood. Memristor has the incremental and decremental feature of the resistance depending upon the connected polarities. Also, its operational behavior become diverse depending on its connection topologies. In this work, electrical characteristics of diverse types of serial and parallel connections are investigated using the HP $TiO_2$ model. The characteristics are analyzed with pinched hystersis loops on the V-I plane when sine input signal is applied. The results of the work would be utilized usefully for analyzing the characteristics of memristor element and applications to logic circuit and neuron cells.
Keywords
Memristor; series and parallel connections; incremental and decremental; pinched hysteresis loop;
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