• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.423-426
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• 2017

The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thick-epitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, $t_{off}$, of SITH, which may be reduced to below ${\sim}0.26{\mu}s$ for the proposed 1,700 V SITH devicesafter optimization.

• Korean Journal of Acupuncture
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• 제23권4호
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• pp.101-110
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• 2006

Objectives : The purpose of this study was clinical observation about sensorineural hearing loss compare with acupucture treatment and assessments of prognotic factors. Methods : This study was clinical observation about sensorineural hearing loss cases. for diagnosing in these cases, pure tone audiometry was used. The treatment, acupuncture was used. Results : Three patients(37.5%) remarkably improved, one patient(12.5%), slightly improved, four patients(50%), no change. Conclusions : These results suggest that the prognosis by age and initial hearing threshold was significant. The treatment on sensorineural hearing loss considered that bone condution improved.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.509-512
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• 2010

The thermal distribution of 2D and 3D p-n photovoltaic diode structures with and without surface texturing has been studied. By analysis of the numerical simulation results of the I-V characteristics and lattice temperature distributions the effect of different texturing structures on the characteristics of silicon p-n photovoltaic devices has been studied systematically. The efficiency of the device having surface texturing shows more than ~2% enhancement compared to the reference devices which did not have texturing. In addition, the effect of the density of the texturing groove has been studied and it has been confirmed that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• 한국지역사회생활과학회:학술대회논문집
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• 한국지역사회생활과학회 2003년도 제16차 학술대회
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• pp.155.1-156
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• 2003

우리 나라가 본격적인 국가개발계획을 추진한 이래 지난 40여 년간 급속한 경제성장과 산업화의 영향으로 농촌인구의 급격한 도시 유입이 이루어지고 이에 따라 도시지역은 비대해지고 농촌지역은 과소화되는 등 농촌 내외의 상황변화에 따라 일반적으로 변화의 속도가 늦은 농촌사회도 많은 변화를 경험하게 되었다. 그런데 이러한 농촌의 변화에 대한 미시적이고 횡단적인 연구는 많이 이루어지고 있으나 장기적이고 생활 측면에서 접근한 연구는 미흡한 실정이다. 따라서 본 연구는 '93∼2002년까지 10년 동안 대구ㆍ낙동강권역의 사례지역인 대구시 달성군 다사면 이천리(도시근교), 경북 상주시 사벌면 원흥3리(평야지), 의성군 봉양면 사력1리(중간지), 문경시 동로면 생달1리(산간지) 4마을에 대한 실태조사를 실시하여 농촌생활의 장기적인 변화를 분석하고, 2000년대 바람직한 농촌 미래상 정립을 위한 기초자료로 활용하고자 이루어졌다.

• 한국지역사회생활과학회:학술대회논문집
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• 한국지역사회생활과학회 2004년도 제17차 학술대회
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• pp.179-180
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• 2004

본 연구는 '93∼'02년까지 10년 동안 대구ㆍ낙동강권역의 사례지역인 대구시 달성군 다사읍 이천리(도시근교), 경북 상주시 사벌면 원흥3리(평야지), 의성군 봉양면 사부1리(중간지), 문경시 동로면 생달1리(산간지) 4마을에 대한 실태조사를 실시하여 농촌생활의 장기적인 변화를 분석하고, '00년대 바람직한 농촌 미래상 정립을 위한 기초자료로 활용하고자 이루어졌다. 이를 위해 매년조사(인구 및 마을환경변화)와 정기조사(9개 생활영역전수조사 : '93, '97, '02), 5년주기 조사(부부의사결정 : '94, '99, 리더십 및 사회적 친밀도 : '96, '01)로 나누어 실시했다. (중략)

• 산업기술연구
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• 제21권B호
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• pp.21-26
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• 2001

In this study, the effects of crystalinity, composition and particle size of $TiO_2$ catalysts on the degradations of humic acid in aqueous solution was assessed using the commercially avaliable $TiO_2$ particles. Photocatalytic oxidations of humic acid (HA, Aldrich Co.) solution were carried out in case of adding different types of $TiO_2$ catalysts and their decomposition efficiencies were analyzed with respect to pH, DOC and UV absorbances values for the HA solutions and compared one another. The experimental results showed that $TiO_2$ particles(Degussa P-25) mixed with anataze and rutile gave the highest degradation efficiencies, respectively and much lower degradation efficiency in $TiO_2$ paticles of rutile only type. In comparing among ST series of anataze types, it was observed that the degradation efficiencies generally were increased with increasing $TiO_2$ contents and surface area of the particles. Higher degradation efficiency of HA was also found in zeolite type(D-TZ) of $TiO_2$ paticles compared with hydroxyapatite type (D-TH) of $TiO_2$ particles.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.440-443
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• 2010

We report a top-down approach based on atomic force microscopy (AFM) local anodic oxidation for the fabrication of the nano-pattern field effect transistors (FETs). AFM anodic oxidation is relatively a simple process in atmosphere at room temperature but it still can result in patterns with a high spatial resolution, and compatibility with conventional silicon CMOS process. In this work, we study nano-pattern FETs for various cross-bar distance value D, from ${\sim}0.5\;{\mu}m$ to $1\;{\mu}m$. We compare the optical characteristics of the patterned FETs and of the reference FETs based on both 2-dimensional simulation and experimental results for the wavelength from 100 nm to 900 nm. The simulated the drain current of the nano-patterned FETs shows significantly higher value incident the reference FETs from ${\sim}1.7\;{\times}\;10^{-6}A$ to ${\sim}2.3\;{\times}\;10^{-6}A$ in the infrared range. The fabricated surface texturing of photo-transistors may be applied for high-efficiency photovoltaic devices.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.763-766
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• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.