• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.6247-6253
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• 2015

This paper presents the transient-response improved LDO regulator based on parallel error amplifiers. The proposed LDO regulator consists of an error amplifier (E/A1) which has a high gain and narrow bandwidth and a second amplifier (E/A2) which has low gain and wide bandwidth. These amplifiers are in parallel structure. Also, to improve the transient-response properties and slew-rate, some circuit block is added. Using pole-splitting technique, an external capacitor is reduced in a small on-chip size which is suitable for mobile devices. The proposed LDO has been designed and simulated using a Megna/Hynix $0.18{\mu}m$ CMOS parameters. Chip layout size is $500{\mu}m{\times}150{\mu}m$. Simulation results show 2.5 V output voltage and 100 mA load current in an input condition of 2.7 V ~ 3.3 V. Regulation Characteristic presents voltage variation of 26.1 mV and settling time of 510 ns from 100mA to 0 mA. Also, the proposed circuit has been shown voltage variation of 42.8 mV and settling time of 408 ns from 0 mA to 100 mA.

• Journal of IKEEE
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• v.18 no.4
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• pp.586-592
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• 2014

In this paper, high efficiency power management IC(PMIC) with DT-CMOS(Dynamic threshold voltage Complementary MOSFET) switching device is presented. PMIC is controlled PWM control method in order to have high power efficiency at high current level. The DT-CMOS switch with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuit consist of a saw-tooth generator, a band-gap reference(BGR) circuit, an error amplifier, comparator circuit, compensation circuit, and control block. The saw-tooth generator is made to have 1.2MHz oscillation frequency and full range of output swing from supply voltage(3.3V) to ground. The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on current mode PWM control circuits and low on-resistance switching device, achieved the high efficiency nearly 96% at 100mA output current. And Buck converter is designed along LDO in standby mode which fewer than 1mA for high efficiency. Also, this paper proposes two protection circuit in order to ensure the reliability.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.758-761
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• 2003

We have designed 5 V/500 mA transless type power module by using semiconductor switching technique, key technique for small size of power supply system. The power module is suitable to a small sized electronic system using a single power supply. It is composed of switching circuit using voltage drop type chopper method, control circuit, voltage detect circuit, and constant voltage circuit, and is fabricated to hybrid-IC type. The switching regulator power supply circuit, designed in this study, has satisfied the electrical characteristics of 5 V/500 mA transless type power module.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.426-427
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• 2010

커패시터 소자와 브릿지 다이오드만을 사용한 교류전원 LED 구동회로를 분석하여, 초저손실 고효율 특성과 더불어 입력전류의 고조파 및 역률특성이 양호해지는 동작점을 찾아내었다. 커패시터 소자는 교류전원에 직렬로 연결되어 전력손실 없이 LED 전류를 제한하는 역할을 하게 되며, 브릿지 다이오드 정류회로는 LED 어레이를 교류전원의 2배 주파수로 구동시키게 한다. 분석결과, 제안된 LED 구동회로는 LED 어레이의 전압강하가 입력 교류전압 최대치의 절반이 될 때 역률특성과 효율이 최고가 되며, 동작온도 변화에 따른 LED 어레이 전압 변동에 대해 출력이 변하지 않는 특징을 갖는다. 이러한 LED 구동회로는 스윗칭 레귤레이터나 IC 등이 없이 단순 수동소자만을 사용함으로써 제품원가 최소화와 효율향상을 동시에 달성할 수 있으며, 실험을 통해 특성이 확인되었다.

• Journal of Industrial Technology
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• v.32 no.A
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• pp.103-107
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• 2012

Due to improvement of the semiconductor technology, the LED replaces the conventional lighting source and LED drivers have been studied and developed. The LED is driven by the constant current control method according to its characteristics. For the constant current control method, the linear regulator and the switching regulator is used. The switching regulator is usually used to LED drivers because it has specific characteristics as the wide input dynamic range and the high efficiency. In this paper, we have described the principle and the implement of the switching regulator, using the drive IC and the low cost DSP chip. Also, both methods have been implemented and its electrical characteristics had almost same experimental results in the steady state and the transient state.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2021.10a
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• pp.630-633
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• 2021

Microphones can convert received voice signals to electric signals. They have been widely used in various industries such as radios, smart devices and vehicles. Recently, the demands for small size and high sensitive microphones are increased according to the minimization of wireless earphone with the development of smart phone. A MEMS system is a good candidate for an ultra-small size microphone of a next generation and a read out IC for high sensitive MEMS sensor is researched from many industries and academies. Since the microphone system has a high sensitivity from environment noise and electric system noise, the system requires a low noise power supply and some low noise design techniques. In this paper, a low noise LDO is presented for small size MEMS microphone systems. The input supply voltage of the LDO is 1.5-3.6V, and the output voltage is 1.3V. Then, it can support to 5mA in the light load condition. The integrated output noise of proposed LDO form 20Hz to 20kHz is about 1.9uV. These post layout simulation results are performed with TSMC 0.18um CMOS technology and the size of layout is 325㎛ × 165㎛.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.4
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• pp.366-372
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• 2016

This paper advances the software, hardware and mechanical design that the visually impaired can recognize the position and distance of the obstacle while walking. The first software implementation is proposed a method to implement the algorithm graph for the ratio of the distance measuring ultrasonic sensors for voltage. And it was extracted by the precise distance measuring parameter values from simulation to measure the precise distance. Second hardware implementation was designed to be able to detect obstacles in a relatively simple sensor-based walking aid for the visually impaired. In addition, using the switching regulator IC of high performance it was designed to be used to boost the Li-ion battery 3.7V to 5V. The third mechanism was developed by analyzing the sensor angle and the cane angle.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.6
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• pp.43-49
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• 2015

In this paper, we propose enhanced wireless power transfer system based on magnetic resonance for portable electronic device charging. Resonators were designed and fabricated for efficiency improvement and miniaturization through electromagnetism simulation using HFSS(High Frequency Structure Simulator). Impedance matching network is employed to minimize reflections that is caused by difference between input impedance and output impedance. Receiver IC that consist of rectifier and Low Drop Out(LDO) regulator were designed and fabricated to reduce power loss. This chip is implemented in $0.35{\mu}m$ BCD technology. A maximum overall efficiency of 73.8% is determined for the system through experimental verification.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.71-80
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• 1999

In this paper, a power MOSFET driver with protection circuits is designed using a 2${\mu}m$ high-voltage CMOS process. For stable operations of control circuits a power managing circuit is designed, and a voltage-detecting short-circuit protection(VDSCP) is proposed to protect a voltage regulator in the power control circuit. The proposed VDSCP scheme eliminates voltage drop caused by a series resistor, and turns off output current under short-circuit state. To protect a power MOSFET, a short-load protection, a gate-voltage limiter, and an over-voltage protection circuit are also designed A high voltage 2 ${\mu}m$ technology provides the breakdown voltage of 50 V. The driver consumes the power of 20 ~ 100 mW along its operation state excluding the power of the power MOSFET. The active area of the power MOSFET driver occupies $3.5 {\times}2..8mm^2$.