• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1001-1007
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• 2002

In this paper we analyzed the effects of pentacene thickness and the location of source/drain contacts on the performance of pentacene TFT Above a certain thickness of pentacene thin film the pentacene grain was turned from the thin film phase into the bulk phase, resulting in degrading the crystallinity and then performance as well. For the top contact structure in which source/drain contacts are located above pentacene film, the contact resistance decreased comparing with the bottom contact structure. However, the leakage current in the off-state became large and then the related parameters such as on/off current ratio were deteriorated. We found that the thickness of around 300$\AA$-700$\AA$ was suitable, and that the bottom contact was more feasible for hig Performance pentacene OTFT.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.7-12
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• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.822-824
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• 2012

21세기는 유전자, 질병검사를 통해 질병 예방, 예후 관리, 재택 및 원격 진료 시스템을 구축하여 초고감도, 실시간으로 환자의 건강 상태를 모니터링 하고, 진단, 처방할 수 있는 IT/BT/NT를 결합한 유비쿼터스 의료 시스템이 대두할 것으로 기대되고 있다. 유비쿼터스 의료 시스템의 핵심적인 역할을 할 것으로 기대되는 바이오센서는 측정 기술로서 획기적인 발전을 거듭하고 있으며 생물학, 화학, 의학, 전자, 물리, 컴퓨터, 기계 공학 등 최첨단 학문의 관련 기술이 복합적으로 융합되면서 실용화에 필요한 요소 기술들이 접목되고 점점 소형화, 시스템화 되어 가고 있는 추세이다. 특히 SiNW(silicon nanowire) 바이오센서 같은 경우 양쪽의 전극이 소스와 드레인 역할을 하고 SiNW receptor가 검출대상과 결합하면 게이트 역할을 하게 된다. 불순물의 농도에 따라 전기적 특성이 결정되는데 검출하고자하는 대상이 receptor와 결합하게 되면 마치 MOS에서 게이트에 전압을 인가한 동작과 같은 역할을 하게 되어 소소와 드레인 사이에 채널이 형성되고 하나의 저항처럼 동작하게 된다. 본 논문에서는 기존의 MOS를 이용하여 현재 전자소자나 바이오센서 등 많은 분야에서 응용되고 있는 SiNW 바이오센서의 기능과 유사하게 피드백 회로를 통해 구현하였다. 피드백 회로의 정상 작동 확인과 SiNW 바이오센서의 역할을 대체한 MOS 소자의 정상 작동을 확인을 위해 블루투스 통신을 이용하여 모니터에 전압 값을 표시한다.

• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.12-16
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• 2000

The electrical characteristics of n-channel LDD structured poly-Si TFT's have been systematically investigated. It have been found that the LDD regions act as the effect of series resistance and reducing the electric field. Kink effect is disappeared and off current is greatly reduced, while on current is slightly reduced. On/off current ratio graph shows that LDD device's switching characteristic is better than that of conventional device. As a result of study, it is concluded that the effect of electric field's reduction is more dominant than that of series resistance.

• Journal of IKEEE
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• v.18 no.4
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• pp.532-535
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• 2014

This paper analyzed thermal characteristics of super junction MOSFET using process and design parameters. Trench process is very important to super junction MOSFET process. We analyzed the difference of temperature, thermal resistance, total power consumption according to trench etch angle. As a result we obtained minimum value of temperature difference and thermal resistance at $89.3^{\circ}$ of trench etch angle. The electrical characteristics distribution of super junction MOSFET is not showed tendency according to trench etch angle. We need iterative experiments and simulation for optimal value of electrical characteristics. The super junction power MOSFET that has superior thermal characteristics will use automobile and industry.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.427-427
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• 2013

잉크젯 프린팅 방법은 전도성 고분자 물질을 잉크 재료로 사용하여 전자 소자의 전극 패턴을 형성할 수 있으며 비접촉, drop-on-demand 공정으로 현재 많은 관심을 받고 있는 연구 분야이다. Ag는 $1.59{\mu}m{\cdot}cm$의 저항을 나타내는 가장 낮은 저항을 가지고 있는 물질 중의 하나이며, Ag 전도성 잉크는 고전도 패턴의 형성을 위해 현재 많이 사용되고 있는 물질이다. 본 연구에서는 a-IGZO 박막을 채널층으로 사용하여 Ag S/D 전극을 잉크젯 프린팅 방법으로 형성하여 산화물 트랜지스터를 제작하였다. a-IGZO 채널층은 $SiO_2$가 증착된 Si 기판위에 스퍼터링 방식으로 80 nm의 두께로 형성하였다. Ag S/D 전극은 10 pl의 카트리지가 장착된 Fujifilm Dimatix DMP 2800 장비를 사용하여 형성하였으며, 프린팅 후 $130^{\circ}C$로 20분간 열처리를 하였다. Fig. 1은 잉크젯 프린팅된 Ag S/D을 가진 a-IGZO의 트랜지스터 특성을 보여준다. 채널 W/L가 90/$50{\mu}m$ 구간에서 드레인 전압이 50 V 일때, 전계효과이동도 $0.27cm^2$/Vs, 문턱전압 6.03 V, 문턱전압 아래의 기울기 값은 2.06 V/dec를 얻었다. 이와 같은 특성은 잉크젯 프린팅 방법으로 Ag S/D 전극을 형성함으로써 산화물 TFT에서 잉크젯 프린팅 방식의 다양한 응용 가능성을 확인할 수 있었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.169-179
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• 1999

In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

• Electrical & Electronic Materials
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• v.6 no.6
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• pp.545-552
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• 1993

단층 금속 Al, Au 게이트 MESFET를 제작하여 열처리에 따른 쇼트키 계면에서의 상호확산 상태와 그에 따른 쇼트키 접촉특성 및 MESFET의 전기적 특성을 조사하였다. Al 및 Au 쇼트키 계면의 상호확산은 as-deposited 상태에서도 나타났으며 열처리 온도가 증가함에 따라 상호확산의 정도는 Au 접촉이 Al 접촉보다 컸다. 특히 Au 접촉에서 Ga의 외부확산이 현저했다 .Al 및 Au 게이트에 있어서 공통적으로 열처리 온도 증가에 따라 포화드레인 전류와 핀치오프 전압은 감소하였고 개방채널 저항은 증가하였으며 변화폭은 Au 게이트가 Al 게이트보다 컸다. Al 및 Au 접촉의 장벽높이는 as-deposited 상태에서 각각 0.70eV, 0.73eV로 페르미 준위는 1/2Eg 근처에 피닝되었다. Al 및 Au 접촉에 있어서 열처리 온도 증가에 따라 장벽높이는 각각 증가, 감소하였으며 이상계수는 각각 감소, 증가하였다. Al 접촉의 경우 열처리를 행함으로서 쇼트키 접촉특성이 개선됨을 확인할 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.9
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• pp.38-45
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• 1993

In this study, the degradation characteristics of drain output resis-tance was described due to hot electron effects. An semi-empirical model for the degraded drain output resistance was derived from the measured device characteristics. The suggested model was verified from the measured data and the device parameter dependence was also analyzed. The degradation of drain output resistance was increased with stress time and had linear relationship with the degradation of drain current. The device lifetime which was defined by failure criteria of drain output resistance (such as $\Delta$ro/roo=5%) was equivalent to that of failure criteria of drain current (such as $\Delta$ID/ID=5%)