• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.2
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• pp.44-52
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• 2002

본 논문에서는 RF와 마이크로파 응용을 위한 MEMS 수동 소자에 대한 내용이다. 이 수동 소자들을 만들기 위해서 개발된 3타원 MEMS공정은 기존의 실리콘 공정과 완전한 호환성을 가지고 한 칩으로 집적화 시킬 수 있는 공정이다. 이 3차원 MEMS 공정은 기존 실리콘 긍정이 가지고 있는 한계를 극복하기 위한 방법으로써 개발되었다. 개발된 공정을 이용하여 실리콘 공정에서 구현할 수 없었던 좋은 성능의 인덕터, 트랜스포머 및 전송선을 RF와 마이크로파 응용을 위해서 구현하였다. 저 전압, 높은 차단율을 위한 push-pull 개념을 도입한 MEMS 스위치를 구현하였다. 또한 높은 Q를 갖는 MEMS 인덕터를 최초로 CMOS 칩과 집적화에 성공하여 600kHz 옵셋 주파수에서 -122 dBc/Hz의 특성을 갖는 2.6 GHz 전압 제어 발진기를 제작하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.68-75
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• 2007

A single chip NFC transceiver supporting not only NFC active and passive mode but also 13.56MHz RFID reader and tag mode was designed and fabricated. The proposed NFC transceiver can operate as a RFID tag even without external power supply which has dual antenna structure for initiator and target. The area increment due to additional target antenna is negligible because the target antenna is constructed by using a shielding layer of initiator antenna. The analog front end circuit of the proposed NFC transceiver consists of a transmitter and receiver of reader/writer block supporting NFC initiator or RFID reader mode, and a tag circuit for target of passive NFC mode or RFID tag mode. The maximum baud rate of the proposed NFC device is 212kbps by using UART serial interface. The chip has been designed and fabricated using a Magnachip's $0.35{\mu}m$ double poly 4-metal CMOS process, and the effective area of the chip is 2200um by 3600um.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.119-124
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• 2008

Transimpedance amplifier(TIA) is the most significant element to determine the performance of the optical receiver, and thus the TIA must satisfy tile design requirements of high gain and wide bandwidth. In f)is paper, we propose a novel single chip optical receiver that exploits an analog adaptive equalizer and a limiting amplifier to enhance the gain and bandwidth performance, respectively. The proposed optical receiver is designed by using a $0.13{\mu}m$ CMOS process and its post-layout simulations show $120dB{\Omgea}$ transimpedance gain and 5.88GHz bandwidth. The chip core occupies the area of $0.088mm^2$, due to utilizing the negative impedance converter circuit rather than using on-chip passive inductors.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.510-515
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• 1997

Packaging takes an extremely important element of optical module cost due primarily to the added complication of alignment between semiconductor devices and optical fiber, and many efforts have been devoted on reducing the cost by eliminating the complicated optical alignment procedures in passive manner. In this study, we fabricated silicon optical benches on which the optical alignments are accomplished passively. To improve the positioning accuracy of a flip-chip bonded LD, we adopted fiducial marks and solder dams which are self-aligned with V-groove etch patterns, and a stand-off to control the height and to improve the heat dissipation of LD. Optical sub-assemblies exhibited an average efficiency of -11.75$\pm$1.75 dB(1$\sigma$) from the LD-to-single mode fiber coupling and an average sensitivity of -35.0$\pm$1.5 dBm from the fiber and photodetector coupling.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.753-759
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• 2005

In this paper, we have developed a new type of single balanced mixer with the RF MEMS $180^{\circ}$ hybrid coupler using surface micromachining technology. The $180^{\circ}$ hybrid coupler in this mixer is composed of the dielectric-supported air gapped microstriplines(DAMLs) which have signal line with $10{\mu}m$ height to reduce substrate dielectric loss and dielectric posts with size of $20{\mu}m{\times}20{\mu}m$ to elevate the signal line on air with stability At LO power of 7.2 dBm, the conversion loss was 15.5 dB f3r RF frequency or 57 GHz and RF power of -15 dBm. Also, we obtained the good RF to LO isolation of -40 dB at LO frequency of 58 GHz and LO power of 7.2 dBm. The main advantage of this type of mixer is that we are able to reduce the size of the chips due to integrating the MEMS passive components.