• Tribology and Lubricants
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• v.35 no.3
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• pp.176-182
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• 2019

The primary objective of this study is to treat a monocrystalline silicon (Si) wafer having a thickness of $279{\mu}m$ by employing the ultrasonic nanocrystal surface modification (UNSM) technology for improving the efficiency and service life of nano-electromechanical systems (NEMSs) and micro-electromechanical systems (MEMSs) by enhancing of wear and corrosion resistances. The wear and corrosion resistances of the Si wafer were systematically investigated before and after UNSM treatment, wherein abrasive, oxidative and spalling wear mechanisms were applied to the as-received and subsequently UNSM-treated Si wafer. Compared to the asreceived state, the wear and corrosion resistances of the UNSM-treated Si wafer are found to be enhanced by about 23% and 14%, respectively. The enhancement in wear and corrosion resistances after UNSM treatment may be attributed to grain size refinement (confirmed by Raman spectroscopy) and modified surface integrity. Furthermore, it is observed that the Raman intensity reduced significantly after UNSM treatment, whereas neither the Raman shift nor new phases were found on the surface of the UNSM-treated Si wafer. In addition, the friction coefficient values of the as-received and UNSM-treated Si wafers are found to be about 0.54 and 0.39, respectively. Hence, UNSM technology can be effectively incorporated as an alternative mechanical surface treatment for NEMSs and MEMSs comprising Si wafers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.115-120
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• 2022

A brown ring (hereinafter referred to as BR) on the inner surface of a quartz glass crucible used in the manufacturing process of a silicon ingot for semiconductor wafers was studied. BR is 20~30 ㎛ in size and has an asymmetric brown ring shape. The size and distribution of BR were different depending on the crucible location, and the size and distribution of BR were the largest and most abundant in the round part with the highest crucible temperature during Si ingot growth. BR contains cristobalite, which has a higher coefficient of thermal expansion than quartz glass, so it is considered that surface cracks appear. The color development of BR and pin holes are presumed to be due to oxygen vacancies.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.49-55
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• 2018

Recently solar cell industry needs the optimal design of Czochralski process for low cost high quality silicon mono crystalline ingot. Because market needs both high efficient solar cell and similar cost with multi-crystalline Si ingot. For cost reduction in Czochralski process, first of all energy reduction should be completed because Czochralski process is high energy consumption process. For this purpose we studied optimal water-cooling tube design and simultaneously we also check the quality of ingot with Von mises stress and V(pull speed of ingot)/G(temperature gradient to the crystallization) values. At this research we used $CG-Sim^{(R)}$ S/W package and finally we got improved water-cooling tube design than normally used process in present industry. The optimal water-cooling tube length should be 200mm. The result will be adopted at real industry.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.269-269
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• 2016

최근, 플렉서블 광전자소자 제작 기술의 눈부신 발전으로, 기존의 평면형 이미지 센서가 가지고 있는 여러가지 한계를 극복하기 위해 곡면형 이미지 센서 제작에 대한 다양한 연구가 진행되고 있다. 리소그래피, 물질 성장, 도포, 에칭 등의 대부분의 반도체 공정은 평면 기판에 기반한 공정 방법으로 곡면 구조의 이미지 센서를 제작하기에는 많은 어려움이 있다. 본 연구에서는 곡면형 이미지 센서의 제작을 위해 곡면 구조 위에서의 직접적인 공정 대신 평면 기판에서 단결정 실리콘을 이용해 전사 인쇄가 가능하고 수축이 가능한 초박막 구조의 이미지 센서를 제작한 후 이를 떼어내는 방식을 이용하였다. 이온 주입 및 건식 식각 공정을 통해 평면 SOI (Silicon on Insulator) 기판 위에 단일 광다이오드 배열 형태의 소자를 제작한 후 수 차례의 폴리이미드 층 도포 및 스퍼터링을 통한 금속 배선 공정을 통해 초박막 형태의 광 검출기를 완성한다. 이후 습식 식각 및 폴리디메틸실록산(PDMS) 스탬프를 이용한 전사 인쇄 공정을 통해 기판으로부터 디바이스를 분리하여 변형 가능한 형태의 이미지 센서를 얻을 수 있다. 이러한 박막형 이미지 센서는 유연한 재질로 인해 수축 및 팽창, 구부림과 같은 구조적 변형이 가능하게 되어 겹눈 구조 카메라, 튜너블 카메라 등과 같이 기존 방식의 반도체 공정으로는 구현할 수 없었던 다양한 이미징 시스템 개발에 적용될 수 있을 것으로 기대된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.361-367
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• 2001

Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27 $\AA$ Rms to 0.64 $\AA$Rms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.555-562
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• 1998

Under the influence of non-uniform magnetic field, melt flow in steady state and oxygen concentration in unsteady state are numerically investigated. The strength of the applied characteristic magnetic fields are B=0.1T, 0.2T, and 0.3T, respectively. The buoyancy effects due to the crucible wall heating and the thermocapillary effects due to the surface tention at the free surface are suppressed differentially by the non-uniform magnetic fields. As the intensity of characteristic magnetic fields is increasing, the recirculation region in the meridional plane is moving toward the growing crystal, and is diminishing. The oxygen concentration on the growing surface of crystals is decreasing and the uniformity of the oxygen concentration is increasing as the intensity of the magnetic fields is increasing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.536-547
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• 1997

For various angular velocities of crucible and crystal, the characteristics of melt flows, temperatures and concentrations of oxygen are numerically studied in the Czochralski furnace with a uniform axial magnetic field. Buoyancy effect due to the heating of crucible wall and thermocapillary effect due to the temperature gradient at the free surface, can be differentiably suppressed by the centrifugal forces due to the rotations of the crucible and crystal. The most important factor which yields the centrifugal forces is the rotation velocity of the crucible, that influences the fields of velocities, temperatures and concentrations. In the case that the crucible rotation velocity is not high, the rotations of the crystal gives rise to the centrifugal forces effectively.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.196-200
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• 2005

In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.34.2-34.2
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• 2011

본 연구에서는 1986년에 국내 섬 지역에 설치된 태양전지 모듈을 대상으로 전기적 특성값의 열화 및 열화 원인에 대한 분석을 실시하였다. 태양전지 모듈의 초기 최대 출력값은 50 W였고, 5인치 단결정 실리콘 태양전지 36개로 구성되어 있었다. 첫째로, 육안 검사를 통해서 태양전지 모듈의 열화 현상을 관찰하였다. 태양전지 모듈의 절연성은 IEC 61215의 기준으로 측정하였다. 태양전지 모듈의 전기적 특성평가를 통해서 최대 출력값의 변화량을 측정하였고, EL(Electroluminescence) 측정을 통해서 태양전지의 열화를 분석하였다. 이를 통해 분석된 주요 열화 모드는 봉지재 (Encapsulant)의 변색(Discoloration) 및 박리(Delamination)현상이었다. 봉지재의 변색된 부분 및 변색되지 않은 부분의 태양광 반사도를 측정한 결과 변색된 부위의 반사도가 증가한 것을 확인하였다. 두번째로 최대 출력전압을 태양전지 모듈에 인가한 상태에서 태양전지 각각의 온도를 T.C (Thermocouple)을 이용하여 측정하였고, 이를 통해서 태양전지의 열화와 온도와의 관계를 분석하였다. 마지막으로 태양전지 모듈의 단면분석을 통해서 봉지재의 박리현상 및 리본와이어의 솔더 접합계면을 관찰하였다. 또한, 봉지재를 제거한 후에 SEM&EDX를 통해서 리본와이어 및 금속전극의 부식현상을 분석하였다.