• Title/Summary/Keyword: 다이오드 모델

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Time-domain Large-signal Modeling of Injection-locked Fabry-Perot Laser Diode for WDM-PON (WDM-PON용 주입 잠금 패브리-페롯 레이저 다이오드의 시영역 대신호 모델링)

  • Lee, Seung-Hyun;Kim, Gun-Woo;Chung, Young-Chul
    • Korean Journal of Optics and Photonics
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    • v.21 no.2
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    • pp.74-81
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    • 2010
  • A modeling methodology for the analysis of injection-locked Fabry-Perot laser diodes (FP-LDs), promising for cost-effective WDM-PON sources, is proposed. The time-domain large-signal model that is used is found to provide quite similar results to some experimental ones. With our methodology, we model characteristics of FP-LDs, such as influence of reflectivity at a facet and detuning on injection-locking. The eye diagram characteristics are also investigated. It is observed that the facet reflectivity at the injection side should be lower than 1% to provide stable operation in terms of good side-mode suppression ratio and independence from detuning between narrow-band injection noise and LD modes. It is also observed that good eye opening can be obtained for 155 Mbps modulation while the parameters such as the active region thickness should be properly optimized to obtain reasonable eye opening at 1.25 Gbps.

A Study on the Lateral Waveguiding & Beam Width Variation of DH Laser Diode (이중 헤테로 접합 레이저 다이오드의 횡방향 도파 및 빔폭 변화에 관한 연구)

  • 김은수;박한규
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.1
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    • pp.15-21
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    • 1983
  • In this paper, the theoretical analysis of lateral guiding mechanism in stripe geometry Double Heterojunction Laser Diode is performed. In the analysis, the spatial variations of gain form refractive index profile are modeled by the mathematical form of injected current density and the beam width variations dependence of active layer, stripe width & cavity length have been analyzed by perturbed mode equation.

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Analytical Model for Breakdown Voltages of InP Diodes (InP 다이오드에서 항복전압의 해석적 모델)

  • Chung, Yong-Sung
    • 전자공학회논문지 IE
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    • v.44 no.1
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    • pp.10-14
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    • 2007
  • Analytical expression for breakdown voltages of InP diodes is induced by employing the effective ionization coefficient extracted from ionization coefficients for electron and hole in InP. The analytical results for breakdown voltage are compared with numerical and experimental results for the doping concentration, $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$. The analytical results show good agreement with the numerical data. Good fits with the experimental results are found for the breakdown voltages within 10% in error at each doping concentration.

Analysis of Optical Signal Transmission Characteristics of Laser Diodes (레이저 다이오드의 광신호 전달 특성 분석)

  • Kim, Do-Gyun;Yun, Young-Sul;Lee, Joon-Jae;Choi, Youg-Wan
    • 한국정보통신설비학회:학술대회논문집
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    • 2005.08a
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    • pp.166-169
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    • 2005
  • 고속 데이터 전송을 함에 있어서 레이저 다이오드(LD)를 이용한 광접속 시스템은 최근 중요한 화두가 되고 있다. LD에 의하여 변조된 광신호는 광자와 캐리어의 동역학적 특성에 영향을 받으며, 이와 같은 LD의 동작 특성을 위해하기 위해서는 율방정식(Rate Equation)을 분석해야만 한다. 본 논문에서는 유한차분법(FDM)을 이용하여 율방정식을 분석하기 위한 모델을 제시하였으며, 이때 주입되는 전류부분에 디지털 혹은 아날로그 신호를 인가함으로써, 광접속 시스템에서 LD의 대역폭, SFDR (Spurious Free Dynamic Rage) 그리고 비선형 특성을 분석하였다.

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Optimization of Sensor Data Window Size for Deep Learning Regression Model (딥러닝 회귀 모델 개발을 위한 센서 데이터 윈도우 사이즈 최적화 기법)

  • Choi, Min-Seo;Yoo, Dong-Yeon;Lee, Jung-Won
    • Proceedings of the Korea Information Processing Society Conference
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    • 2022.05a
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    • pp.610-613
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    • 2022
  • 센서 데이터의 중요성이 커지면서 센서 데이터 처리 연구의 수요가 증가하고 있다. 센서 데이터 기반의 딥러닝 모델 개발 시, 센서 데이터 단일 값에 의한 출력이 아닌 시계열적인 특성을 반영하여 연속적인 데이터 간의 연관성을 파악할 수 있는 슬라이딩 윈도우 기법을 통해 효율적으로 데이터를 분석하고 처리할 수 있다. 하지만, 기존의 방법들은 학습 성능(학습 시간 및 모델 성능)에 미치는 영향을 평가하는 기준 없이 입력 데이터의 윈도우 사이즈를 임의로 설정하여 데이터를 처리해 왔다. 따라서, 본 논문은 학습 시간과 모델 성능을 기준으로 센서 데이터의 윈도우 사이즈 최적화 기법을 제안한다. 제안한 방법은 전류를 이용하여 스위치와 다이오드 온도를 추정하는 가상 센서(virtual sensor) 실험 테스트베드에 적용하여, 학습 시간 중심으로는 5%의 윈도우 사이즈를, 모델 성능 중심으로는 R2 SCORE 의 값을 0.9295 로 갖는 8%의 윈도우 사이즈가 최적으로 도출되었다.

Characterization of Schottky Diodes and Design of Voltage Multiplier for UHF-band Passive RFID Transponder (UHF 대역 수동형 RFID 태그 쇼트키 다이오드 특성 분석 및 전압체배기 설계)

  • Lee, Jong-Wook;Tran, Nham
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.7 s.361
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    • pp.9-15
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    • 2007
  • In this paper, we present the design of Schottky diodes and voltage multiplier for UHF-band passive RFID applications. The Schottky diodes were fabricated using Titanium (Ti/Al/Ta/Al)-Silicon (n-type) junction in $0.35\;{\mu}m$ CMOS process. The Schottky diode having $4{\times}10{\times}10\;{\mu}m^{2}$ contact area showed a turn-on voltage of about 150 mV for the forward diode current of $20\;{\mu}A$. The breakdown voltage is about -9 V, which provides sufficient peak inverse voltage necessary for the voltage multiplier in the RFID tag chip. The effect of the size of Schottky diode on the turn-on voltage and the input impedance at 900 MHz was investigated using small-signal equivalent model. Also, the effect or qualify factor of the diode on the input voltage to the tag chip is examined, which indicates that high qualify factor Schottky diode is desirable to minimize loss. The fabricated voltage multiplier resulted in a output voltage of more than 1.3 V for the input RF signal of 200mV, which is suitable for long-range RFID applications.

The Alignment Evaluation for Patient Positioning System(PPS) of Gamma Knife PerfexionTM (감마나이프 퍼펙션의 자동환자이송장치에 대한 정렬됨 평가)

  • Jin, Seong Jin;Kim, Gyeong Rip;Hur, Beong Ik
    • Journal of the Korean Society of Radiology
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    • v.14 no.3
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    • pp.203-209
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    • 2020
  • The purpose of this study is to assess the mechanical stability and alignment of the patient positioning system (PPS) of Leksell Gamma Knife Perfexion(LGK PFX). The alignment of the PPS of the LGK PFX was evaluated through measurements of the deviation of the coincidence of the Radiological Focus Point(RFP) and the PPS Calibration Center Point(CCP) applying different weights on the couch(0, 50, 60, 70, 80, and 90 kg). In measurements, a service diode test tool with three diode detectors being used biannually at the time of the routine preventive maintenance was used. The test conducted with varying weights on the PPS using the service diode test tool measured the radial deviations for all three collimators 4, 8, and 16 mm and also for three different positions of the PPS. In order to evaluate the alignment of the PPS, the radial deviations of the correspondence of the radiation focus and the LGK calibration center point of multiple beams were averaged using the calibrated service diode test tool at three university hospitals in Busan and Gyeongnam. Looking at the center diode for all collimators 4, 8, and 16 mm without weight on the PPS, and examining the short and long diodes for the 4 mm collimator, the means of the validation difference, i.e., the radial deviation for the setting of 4, 8, and 16 mm collimators for the center diode were respectively measured to 0.058 ± 0.023, 0.079 ± 0.023, and 0.097 ± 0.049 mm, and when the 4 mm collimator was applied to the center diode, the short diode, and the long diode, the average of the radial deviation was respectively 0.058 ± 0.023, 0.078 ± 0.01 and 0.070 ± 0.023 mm. The average of the radial deviations when irradiating 8 and 16 mm collimators on short and long diodes without weight are measured to 0.07 ± 0.003(8 mm sd), 0.153 ± 0.002 mm(16 mm sd) and 0.031 ± 0.014(8 mm ld), 0.175 ± 0.01 mm(16 mm ld) respectively. When various weights of 50 to 90 kg are placed on the PPS, the average of radial deviation when irradiated to the center diode for 4, 8, and 16 mm is 0.061 ± 0.041 to 0.075 ± 0.015, 0.023 ± 0.004 to 0.034 ± 0.003, and 0.158 ± 0.08 to 0.17 ± 0.043 mm, respectively. In addition, in the same situation, when the short diode for 4, 8, and 16 mm was irradiated, the averages of radial deviations were 0.063 ± 0.024 to 0.07 ± 0.017, 0.037 ± 0.006 to 0.059 ± 0.001, and 0.154 ± 0.03 to 0.165 ± 0.07 mm, respectively. In addition, when irradiated on long diode for 4, 8, and 16 mm, the averages of radial deviations were measured to be 0.102 ± 0.029 to 0.124 ± 0.036, 0.035 ± 0.004 to 0.054 ± 0.02, and 0.183 ± 0.092 to 0.202 ± 0.012 mm, respectively. It was confirmed that all the verification results performed were in accordance with the manufacturer's allowable deviation criteria. It was found that weight dependence was negligible as a result of measuring the alignment according to various weights placed on the PPS that mimics the actual treatment environment. In particular, no further adjustment or recalibration of the PPS was required during the verification. It has been confirmed that the verification test of the PPS according to various weights is suitable for normal Quality Assurance of LGK PFX.

Analytical Models for Breakdown Voltage and Specific On-Resistance of 4H-SiC Schottky Diodes (4H-SiC 쇼트키 다이오드의 해석적 항복전압과 온-저항 모델)

  • Chung, Yong-Sung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.22-27
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    • 2008
  • Analytical models for breakdown voltage and specific on-resistance of 4H-silicon carbide Schottky diodes have been derived successfully by extracting an effective ionization coefficient $\gamma$ from ionization coefficients $\alpha$ and $\beta$ for electron and hole in 4H-SiC. The breakdown voltages extracted from our analytical model are compared with experimental results. The specific on-resistance as a function of doping concentration is also compared with the ones reported previously. Good fits with the experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of about $10^{15}{\sim}10^{18}\;cm^{-3}$. The analytical results show good agreement with the experimental data for the specific on-resistance in the range of $3{\times}10^{15}{\sim}2{\times}10^{16}\;cm^{-3}$.

Analytical Methods for the Extraction of PV panel Single-Diode model parameters from I-V Characteristic (I-V 특성곡선을 통한 태양전지 패널의 모델 파라미터 추출 방법)

  • Choi, Sung-Won;Ryu, Ji-Hyung;Lee, Chang-Goo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.2
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    • pp.847-851
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    • 2011
  • Photovoltaic System is increasing install capacity based on environmental-friendly characteristics. It have been actively studied to improve the efficiency. In order to design highly efficient system, it is important to understand the output characteristics of solar panels. The single diode model can represent the physical characteristics of solar panel. But it needs complex process such as mutli-step measurement and numerical analysis to get the exact parameters. In this paper, The method for extracting characteristic parameters of the single diode model based on the I-V characteristic curves in the panel manufacturer's data-sheet is presented. To verify the proposed method, solar cell model constructed in simulink. Simulink model output compared with output graph in datasheet.

New SPICE Modeling for Bias-Dependent Gate-Drain Overlap Capacitance in RF MOSFETs (RF MOSFET의 바이어스 종속 게이트-드레인 오버렙 캐패시턴스의 새로운 SPICE 모델링)

  • Lee, Sangjun;Lee, Seonghearn
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.4
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    • pp.49-55
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    • 2015
  • The inaccuracy of the bias-dependent gate-drain overlap capacitance $C_{gdo}$ simulation in original BSIM4 and BSIM4 macro model using a diode is analyzed in detail. It is found that the accuracy of the macro model is better than of the BSIM4. However, the macro model cannot be used in the linear region. In order to remove the inaccuracy of the conventional models, a new BSIM4 macro model with a physical bias-dependent $C_{gdo}$ equation is proposed and its accuracy is validated in the full bias range.