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http://dx.doi.org/10.5573/ieie.2015.52.4.049

New SPICE Modeling for Bias-Dependent Gate-Drain Overlap Capacitance in RF MOSFETs  

Lee, Sangjun (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.52, no.4, 2015 , pp. 49-55 More about this Journal
Abstract
The inaccuracy of the bias-dependent gate-drain overlap capacitance $C_{gdo}$ simulation in original BSIM4 and BSIM4 macro model using a diode is analyzed in detail. It is found that the accuracy of the macro model is better than of the BSIM4. However, the macro model cannot be used in the linear region. In order to remove the inaccuracy of the conventional models, a new BSIM4 macro model with a physical bias-dependent $C_{gdo}$ equation is proposed and its accuracy is validated in the full bias range.
Keywords
MOSFET; RF; Modeling; SPICE model; overlap capacitance;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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