• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.96-96
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• 2011

ZnO는 실온에서 3.37 eV의 큰 밴드갭 에너지와 60 meV의 높은 exciton binding energy를 가지고 있어 광소자를 만드는데 큰 관심을 얻고 있다. 또한 최근에는 ZnO를 기반으로 한 동종접합 전광소자를 만드는데 성공하였다. 그러나 소자의 성능을 높이기 위해 여러 가지 개선할 사항이 있다. 그 중에 하나는 캐리어를 잘 주입 시키기 위한 금속-반도체 접합을 구현하는 것이다. 이러한 문제를 개선하기 위해서는 ZnO 기반으로 한 낮은 비저항을 가진 소자가 필요하다. 일반적으로 n-type ZnO Ohmic 접합에서 쓰이는 금속은 Ti/Au, Ta/Au, Al/Au 등이 있다. 실험방법은 c-plane 사파이어 기판 위에 펄스 레이저 증착 방법으로 3시간 동안 $500^{\circ}C$ 환경에서 ZnO 박막을 성장하고, 표면을 고르게 하기 위해 $1000^{\circ}C$에서 1분 동안 열처리를 진행하였다. 샘플 위에 photo-resist 코팅을 한 다음 transfer length method(TLM)를 이용하기 위해 포토리소그래피 장비를 통하여 샘플을 노광하였다. 그 위에 Ti/Au (30 nm/80 nm)를 E-beam/thermal evaporation으로 증착 하였다. 이는 일반적인 반도체 공정과 Lift-off방식을 이용하여 패터닝 하였다. 샘플을 열처리하는 것은 금속과 반도체의 접촉 접착과 전기적인 성질을 개선하고 응력과 계면 결함을 감소시키기 때문에 샘플을 100, 200, 300, 400, $500^{\circ}C$에서 각각 열처리하였다. 저항을 구하기 위해 각각 열처리된 샘플과 as-deposited의 전류, 전압 특성을 측정하고, 이러한 실험 방법으로 n-type ZnO의 Ohmic 접합을 구현하는 것이 목표이다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.10 s.253
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.240-244
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• 2003

후막 리소그라피 기술은 기판 위에 감광성 페이스트를 도포한 후 자외선과 패턴마스크를 사용하는 광식각(photolithography) 방법을 이용하여 세부 패턴을 형성시키는 기술이다, 이 기술은 후막기술로서는 높은 해상도인 선폭 $30{\mu}m$ 이하의 미세도선을 구현할 수 있어, 후막기술을 이용한 고주파 모듈의 제조에 있어서 새로운 대안으로 주목받고 있다. 본 연구에서는 알루미나 기판 상에 수십 ${\mu}m$ 이하의 마이크로 비아를 가지는 유전체 층을 형성시킬 수 있는 저온소결용 감광성 유전체 페이스트를 개발하였다. 저온소결용 유전체 파우더와 폴리머, 모노머, 광개시제 등의 양을 조절하여 마이크로 비아를 형성할 수 있는 최적 페이스트 조성을 연구하였으며, 노광량 및 현상시간과 같은 공정변수가 마이크로 비아의 해상도에 미치는 영향을 평가하였다. 알루미나 기판에 전면 프린팅 한 후 건조, 노광, 현상, 소성 과정을 거쳐 소결전 $37{\mu}m$, 소결후 $49{\mu}m$의 해상도를 가지는 마이크로 비아를 형성할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.115-115
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• 2010

광 결정 발광 다이오드를 제작하는데 있어서 문제가 되는, 표면 비 발광 재결합을 줄이기 위해서 $(NH_4)_2S_x$ 패시베이션 효과를 연구하였고, 실제 소자를 공정하였다. $(NH_4)_2S_x$ 패시베이션의 영향을 알아보기 위해서, GaAs 기판위에 10쌍 다중 양자 우물 구조를 가진, 에피탁시를 이용하여 광 결정 다이오드를 제작하였고, 그 후 패시베이션 처리를 하였다. 광 결정 격자 상수는 600 nm 였고, 전자 빔 노광기법을 이용하여 패턴을 만들었다. 패시베이션효과는 시분해 발광 측정을 이용하여 캐리어 라이프 타임의 변화를 통해 확인 할 수 있었다. 광 결정 구조가 없는 발광 다이오드에서의 라이프 타임은 2206 ps였고, 광 결정 구조를 가진 발광다이오드에서의 라이프타임은 831ps였다. 이는 식각된 구멍의 표면에서 비 발광 재결합이 증가했다는 것을 의미한다. 패시베이션 처리된 광 결정 발광다이오드의 라이프 타임은 1560 ps 으로 광 결정 구조의 표면에서 발생된 비 발광 표면 재결합이 상당히 줄었음을 알 수 있다. 상용 에피탁시에 실제 소자에 적용 가능한 광 결정 발광 다이오드를 제작하였다. 상용 에피탁시는 20쌍의 다중 양자우물과, 16쌍의 Distributed Bragg Reflector를 가진 구조이다. 이 상용 에피탁시에 광 결정 구조를 만들기 위해서 니켈 크롬 (NiCr) 마스크를 사용하였고, 기존 식각 시간보다 세배 길어진 식각 시간을 달성하였다.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.8
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• pp.172-179
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• 2000

In this paper a technology for the fabrication of the oblique structure using the LIGA process will be presented. The fabricated microstructure is a tetrahedral 3- facet mirror. The mirror has an equilateral triangular base of hundreds ${\mu}m$ length mirror-like three side-facets inclined to the base at 45$^{\circ}$ and knife edges. Two regular triangles of 45$^{\circ}$ and tan-12. After development the shaded part of the PMMA the tetrahedral mirror remains, The completed mirror shows excellent aspects of mirror-like facets and knife-edges. By controlling the gap between the mask and the substrate the size of mirror easily can be changed. This mirror would be used as a laser beam splitter for the feedback control of the HDD slider.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.58-62
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• 2019

Diffractive Optical Elements(DOEs) diffracts incident light using the diffraction phenomenon of light to generate a desired diffraction image. In recent years, the use of diffraction optics, which can replace existing refractive optical elements with flat plates, has been increased by implementing various optical functions that could not be implemented in refractive optical devices and by becoming miniaturized and compacted optical elements. Direct laser lithography is typically used to effectively fabrication such a diffractive optical element in a large area with a low process cost. In this study, the process conditions for fabricating patterns of diffractive optical elements in various shapes were found using direct laser lithographic system, and optical performance evaluation was performed through fabrication.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.2
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• pp.173-178
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• 2012

Currently, active research is being performed on printing of electronic devices such as RFID devices, flexible displays, solar cells, and e-paper. This technique has several advantages over existing technologies such as lithography and etching. In particular, RFID devices, flexible displays, solar cells, and e-paper require flexibility and a mass production system. Thus, attention is being focused on the roll-to-roll process. High quality should be guaranteed in the roll-to-roll printed electronics systems, and good thickness and roughness qualities must be ensured. Experimental design was applied to this problem to analyze the main effects and interaction effects of various factors. Matching technology between the nip roll characteristics and the quality of the print pattern in roll-to-roll printed electronics systems was proposed to improve the printing quality.

• Polymer(Korea)
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• v.28 no.6
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• pp.445-454
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• 2004

The requirement for a much finer line width circuits on semiconductors needs new developers such as supercritical fluid to prevent the collapse of the photoresist micro-patterns. The copolymers contain t-butyl methacrylate having an acid-cleavable t-butyl group and supercritical fluid $CO_2$ soluble perfluorinated decyl methacrylate segments. The supercritical fluid $CO_2$-philic properties of the photoresist changed to supercritical fluid $CO_2$-phobic properties after the deprotection reaction by exposure, which made the exposed resist insoluble in the supercritical fluid $CO_2$ developer. The synthesized copolymers containing more than 30% of perfluorinated decyl methacrylate were found to be soluble in supercritical fluid $CO_2$. The variation of film thickness before and after exposure was largest when the mole ratio of perfluorinated decyl methacrylate in the copolymer was 30%.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.59-66
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• 2004

This paper presents a novel fabrication process for a tapered hollow metallic microneedle array using backside exposure of SU-8, and analytic solutions of critical buckling of a tapered hollow microneedle. An SU-8 meta was formed on a Pyrex glass substrate and another SU-8 layer, which was spun on top of the SU-8 mesa, was exposed through the backside of the glass substrate. An array of SU-8 tapered pillar structures. with angles in the range of $3.1^{\circ}{\sim}5^{\circ}$ was formed on top of the SU-8 mesa. Conformal electrodeposition of metal was carried out followed by a mechanical polishing using a pianarizing polymeric layer. All organic layers were then removed to create a metallic hollow microneedle array with a fluidic reservoir on the backside. Both $200{\mu}m\;and\;400{\mu}m$ tall, 10 by 10 arrays of metallic microneedles with inner diameters of the tip in the range of $33.6{\sim}101\;{\mu}m$ and wall thickness of $10{\mu}m\;-\;20{\mu}m$ were fabricated. Analytic solutions of the critical buckling of arbitrary-angled truncated cone-shaped columns are also presented. It was found that a single $400{\mu}m$ tall hollow cylindrical microneedle made of electroplated nickel with a wall thickness of $20{\mu}m$, a tapered angle of $3.08^{\circ}$ and a tip inner diameter of $33.6{\mu}m$ has a critical buckling force of 1.8 N. This analytic solution can be used for square or rectangular cross-sectioned column structures with proper modifications.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.28 no.1
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• pp.79-83
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• 2015

This paper presents a numerical study on the alignment of ridge-like surface structures evolving on silicon-germanium thin films under localized modulation of surface diffusivity. A situation is considered in which the surface diffusion of film material is selectively promoted such that its morphology is perturbed to periodic patterns. To simulate the growth behavior, a governing equation is formulated taking the surface chemical potential into account, and its solution is numerically sought using a finite-difference method. Results show that an initially planar surface coalesces upon the diffusivity modulation, and the surface structures can be aligned by changing the frequency of modulation condition. This research suggests a bottom-up fabrication technique that can manage the regularity of surface structures for thin film devices.