• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.1-9
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• 2000

A new method, the external resistance method (ERM method), is proposed for accurate extraction of the gate bias-dependent effective channel carrier mobility (${\mu}_{eff}$) and separated parasitic source/drain resistances ($R_S$ and $R_D$) of n-channel MOSFET's. The proposed ERM method is applied to n-channel LDD MOSFETs with two different gate lengths ($W_m/L_m=30{\mu}m/0.6{\mu}m,\;30{\mu}m/1{\mu}m$) in the linear mode of current-voltage characteristics ($I_D-V_{GS},\;V_{DS}$). We also considered gate voltage dependence of separated $R_2$ and $R_D$ in the accurate modeling and extraction of effective channel carrier mobility. Good agreement of experimental data is observed in submicron n-channel LDD MOSFETs. Combining with capacitance-voltage characteristics, the ERM method is expected to be very useful for accurate and efficient extraction of ${\mu}_{eff},\;R_D,\;R_S$, and other characteristic parameters in both symmetric and asymmetric structure MOSFET's in which parasitic resistances are critical to the improvement of high speed performance and reliability.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.167-173
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• 2009

This paper proposes an electronically beam steering array antenna, consisting of single fed active element and 4 parasitic elements, operating in 5.8 GHz ISM band. Beam steering can be achieved by controlling the reactance of the variable reactance control circuit connected to the load of the parasitic elements without using the high cost phase shifters. The proposed antenna realizes ${\pm}30^{\circ}$ beam scanning of E-plane and H-plane with the below -10 dB return loss in ISM band. The gain of the $6.18{\sim}7.53\;dBi$ in E-plane and $7.022{\sim}7.779\;dBi$ in H-plane is shown in the scanning range.

• Electrical & Electronic Materials
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• v.12 no.9
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• pp.57-63
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• 1999

SOI 구조의 MOSFET은 제조공정이 상대적으로 간단하며 CMOS 래치 업 현상이 일어나지 않고, soft error에 의한 회로의 오동작 가능성이 매우 낮은 이외에도 낮은 기생 정전용량 및 누설전류 특성을 가지므로 0.1 미크론 이하의 소자를 제작하는데 적합하여 저전압, 초고속 VLSI 설계에 적합한 소자로 각광받고 있다. 본고에서는 새로운 구조의 SOI MOSFET 구조들의 특성과 장, 단점을 검토하고 나아가 BJT(Bipolar Junction Transistor) 및 기타 소자들을 SOI 구조로 제작한 결과에 대해 간단히 검토함으로써 1999년 현재 SOI 기술의 현황을 소개하고자 한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.115-123
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• 2009

In this paper, we extract the parasitic elements of the transmission line with the defected ground structure(DGS) and the short-circuited comb line section using the Short-Open Calibration(SOC). The scattering matrixes of short, open and the distributed elements in microstrip line are measured by full electro-magnetic(EM) simulator and Vector Network Analyser(VNA). The electro-magnetic effects of the proposed structures are considered by the II and T equivalent circuits with frequency independent elements, and the relations between the measured scattering parameters and the elements in the circuits are shown by performing 2 port network analysis. Moreover, to design the 2.4 GHz bandpass filter with second order butterworth prototype, the proposed methods are applied. As results, the measured $S_{11}$ and $S_{21}$ indicate -20 dB and -1.3 dB at center frequency, and these are shown within 5 % error compare to the predicted results at $0.5{\sim}5\;GHz$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.155-155
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• 1999

반도체 소자의 초고집적화와 고속화에 따라 최소 선폭이 급격히 줄어듬에 따라 현재 사용되고 있는 다층금속배선의 층간절연막 0.18$\mu\textrm{m}$ 급 이상의 소자에 적용할 경우 기생정전용량이 증가하여 신호의 지연 및 금속배선간에 상호간섭현상으로 반도체 소자의 동작에 심각한 문제가 대두되고 있다. 이러한 물제를 해결하기 위하여 nonoporous silica, fluorinated amorphous carbon, polyimides, poly(arylene)ether, parylene, AF4, poly(tetrafluoroethylene), divinyl siloxane bisbenzocyclobutene, Silk, 그리고 유무기 hybrid nanofoam 등이 저유전물질로 각광을 받고 있으며, 여기에 대한 연구가 우리나라를 비롯하여 미국, 일본 등에서 많은 연구가 이루어지고 있다. 따라서 본 연구에서는 2003년에 개발될 0.13$\mu\textrm{m}$급 이상의 차세대 반도체 소자에 적용될 수 있는 저유전물질 개발현황과 이들 물질 중 4GDRAM 급이상의 소자에 적용가능성이 가장 높은 유무기 hybrid nanofoam, a-C:F와 C:F-SiO2 박막에 대한 특성에 대하여 소개하고자 한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.528-537
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• 2002

In this paper, the extended FDTD is used for the analysis of microwave circuits including active elements. Lumped elements such as R, L, C which are inserted into a microstrip line are analyzed with the FDTD lumped element modeling. Parasitic capacitance and inductance could be obtained using network modeling and so it is sure that FDTD lumped element modeling makes it possible to get more accurate data which include parasite components. Moreover, a balanced mixer using two diodes that are modeled by an extended FDTD is designed and the more exact characteristic of the mixer is acquired than in current circuit simulator.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1620-1627
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• 2001

In this paper, a broadband microstrip antenna for PCS and IMT-2000 service is designed. To obtain the broadband characteristics of an antenna, we utilized the multi-layered structure composed of two foam material layers, parasitic element and aperture coupled feeding network. The broadband characteristic is obtained by changing the size of parasitic element and the height of foam materials. In addition to that, the usage of metal layer at the distance of λ/4 from feed-line, back radiation is reduced. The bandwidth of a single element for VSWR less than 1.3 is about 550MHz. The bandwidth of a designed 1$\times$4 array antenna for VSWR less than 1.3 is about 460MHz. The gain of a designed array antenna is about 11.15∼12.15dBi and the front-to-back ratio is about 30dB.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.485-490
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• 2010

We propose the equivalent circuit model including all parasitic components in input gate of sense amplifier of DDI DRAM with butting contact structure. We analysed the effect of parasitic schottky diode by using the proposed model in the operation of sense amplifier. The cause of single side fail and the temperature dependence of fail rate in DDI DRAM are due to creation of the parasitic schottky diode in input gate of sense amplifier. The parasitic schottky diode cause the voltage drop in input gate, and result in decreasing noise margin of sense amplifier. therefore single side fail rate increase.

• Journal of IKEEE
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• v.22 no.2
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• pp.413-419
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• 2018

An UWB(Ultra Wide Band) antenna with band rejection characteristics is designed and implemented. A planar radiation patch with slot, parasitic elements on both sides of strip and ground plane on back side consist the proposed antenna. The slot in the radiation patch and parasitic elements contribute corresponding bands rejection characteristics. The slot contributes for WiMAX(World interoperability for Microwave Access, 3.30~3.70 GHz) band rejection and parasitic elements contribute for X-Band(7.25~8.395 GHz) rejection. Ansoft's HFSS(High Frequency Structure Simulator) was used to design the proposed antenna and performance simulations. Simulation result showed VSWR(Voltage Standing Wave Ratio) less than 2.0 for UWB band except for dual rejection bands of 3.30~3.86 GHz and 7.21~8.39 GHz. And VSWR measurement result for the implemented antenna shows less than 2.0 for 3.10~10.60 GHz band except dual rejection bands of 3.25~3.71 GHz and 7.25~8.46 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.7
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• pp.719-725
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• 2008

In this paper, we have proposed a printed monopole antenna using parasitic elements. The broadband characteristics of the antenna is obtained by using the printed monopole and parasitic elements. To confirm the broadband characteristics of the antenna, of have designed and fabricated the proposed antenna. The return loss and radiation patterns are measured in the frequency range of$0.8{\sim}1.2\;GHz$. The measured results show that the proposed antenna has return loss less than -10 dB in the operating frequency band and the radiation pattern is the dipole-like patterns. The antenna gain varies from 1.7 to 4.6 dBi in the operating frequency band. Thus, the proposed antenna can be used for the broadband repeater antenna $0.806{\sim}0.960\;GHz$(TRS-800, CDMA and GSM-900).