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http://dx.doi.org/10.5762/KAIS.2010.11.2.485

Analysis of effect of parasitic schottky diode on sense amplifier in DDI DRAM  

Chang, Sung-Keun (Dept. of Digital Broadcasting & Electronics Engineering, Chungwoon University)
Kim, Youn-Jang (Magnachip Semiconductor Ltd. CE NED team)
Publication Information
Journal of the Korea Academia-Industrial cooperation Society / v.11, no.2, 2010 , pp. 485-490 More about this Journal
Abstract
We propose the equivalent circuit model including all parasitic components in input gate of sense amplifier of DDI DRAM with butting contact structure. We analysed the effect of parasitic schottky diode by using the proposed model in the operation of sense amplifier. The cause of single side fail and the temperature dependence of fail rate in DDI DRAM are due to creation of the parasitic schottky diode in input gate of sense amplifier. The parasitic schottky diode cause the voltage drop in input gate, and result in decreasing noise margin of sense amplifier. therefore single side fail rate increase.
Keywords
DDI; DRAM; single side fail; Schottky diode; Noise margin;
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Times Cited By KSCI : 1  (Citation Analysis)
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