• Korean Journal of Materials Research
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• v.7 no.7
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• pp.592-596
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• 1997

LI$_{2}$형 결정구조를 갖는 Ni-20at.%AI-10at%Fe 금속간화합물에 boron, zirconium 과 hafnium을 최고 0.5at.% 까지 첨가하여 항복강도, 연성, 파괴 등 기계적 성질의 변화를 인장시험과 X선분석 및 XPS분석 등을 통하여 관찰하였다. Ni-20at.% AI-10at.% Fe금속간화합물에 boron을 첨가하였을 때는 연신율의 현저한 증가가 나타났으나 zirconium이나 hafnium첨가의 경우에는 별다른 효과가 나타나지 않았다. Ni-20at.%AI-10at%Fe 금속간화합물의 경우, boron의 양이 증가할수록 인장연신율이 증가하였으며 0.1at.%의 boron을 첨가한 경우 최고 48.5%의 상온인장연신율을 나타내었다. 첨가물을 넣지 않은 경우와 zirconium과 hafnium을 첨가한 경우, 파괴모드는 입계파괴의 형태를 나타내었으나 boron을 첨가한 경우에는 파괴모드가 입계파괴에서 입내파괴로 변화되었다. XPS분석을 통하여 boron이 입계에 편석된 것을 관찰할 수 있었으며 이는 이미 제시된 여러가지 해석들과 일치하는 결과이다. 이로부터 boron의 첨가에 따른 인장연신율의 증가는 boron의 입계편석거동과 관련이 있음을 알 수 있다.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.37-42
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• 2003

In soldering of electronic packaging, the research on substituting lead-free solder materials for Pb-Sn alloys has become active due to environmental and health concerns over the use of lead. The reliability of the solder joint is very important in the development of solder materials and it is known that it is related to wettability of the solder over the substrate and microstructural evolution during soldering. It is also highly affected by type and extent of the interfacial reaction between solder and substrate and therefore, it is necessary to understand the interfacial reaction between solder and substrate completely. In order to predict the intermetallic compound (IMC) phase which forms first at the substrate/solder interface during the soldering process, a thermodynamic methodology has been suggested. The activation energy for the nucleation of each IMC phases is represented by a function of the interfacial energy and the driving force for phase formation. From this, it is predicted that the IMC phase with the smallest activation energy forms first. The grain morphology of the IMC at the solder joint is also explained by the calculations which use the energy. The Jackson parameter of the IMC grain with a rough surface is smaller than 2 but it is larger than 2 in the case of faceted grains.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.43-49
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• 2007

Thickness of intermetallic compounds and consumption rates of under bump metallurgies (UBMs) were investigated in wafer-level solder bumping with variations of UBM materials and reflow times. In the case of Cu UBM, $0.6\;{\mu}m-thick$ intermetallic compound layer was formed before reflow of Sn solder, and the average thickness of the intermetallic compound layer increased to $4\;{\mu}m$ by reflowing at $250^{\circ}C$ for 450 sec. On the contrary, the intermetallic layer had a thickness of $0.2\;{\mu}m$ on Ni UBM before reflow and it grew to $1.7\;{\mu}m$ thickness with reflowing for 450 sec. While the consumption rates of Cu UBM were 100nm/sec fur 15-sec reflow and 4.50-sec for 450-sec reflow, those of Ni UBM decreased to 28.7 nm/sec for 15-sec reflow and 1.82 nm/sec for 450-sec reflow.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.35-39
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• 2012

We studied interfacial reaction and bonding characteristics of a flip chip bonding with the viewpoint of formation behavior of intermetallic compounds. For this purpose, Sn-0.7Cu and Sn-3Cu solders were reflowed on the Al/Cu and Al/Ni UBMs. When Sn-0.7Cu was reflowed on the Al/Cu UBM, no intermetallic compounds were formed at the solder/UBM interface. The $Cu_6Sn_5$ intermetallic compounds formed by reflowing Sn-3Cu solder on the Al/Cu UBM were spalled from the interface, resulting in delamination of the solder/UBM interface. On the other hand, the $(Cu,Ni)_6Sn_5$ intermetallic compounds were formed by reflowing of Sn-0.7Cu and Sn-3Cu on the Al/Ni UBM and the interfacial bonding between the Sn-Cu solders and the Al/Ni UBM was kept stable.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.81-88
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• 2010

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $4{\times}10^3\;A/cm^2$ conditions in order to investigate the effect of PCB surface finishs on the growth kinetics of intermetallic compound (IMC) in Sn-3.0Ag-0.5Cu solder bump. The surface finishes of the electrodes of printed circuit board (PCB) were organic solderability preservation (OSP), immersion Sn, and electroless Ni/immersion gold (ENIG). During thermal annealing, the OSP and immersion Sn show similar IMC growth velocity, while ENIG surface finish had much slower IMC growth velocity. Applying electric current accelerated IMC growth velocity and showed polarity effect due to directional electron flow.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.45-51
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• 2013

Thermal annealing tests were performed in an in-situ scanning electron microscope chamber at $130^{\circ}C$, $150^{\circ}C$, and $170^{\circ}C$ in order to investigate the effects of solder structure on the growth kinetics of intermetallic compound (IMC) in Cu/Sn-3.5Ag microbump. Cu/Sn-3.5Ag($6{\mu}m$) microbump with spreading solder structure showed $Cu_6Sn_5$ and $Cu_3Sn$ phase growths and then IMC phase transition stages with increasing annealing time. By the way, Cu/Sn-3.5Ag($4{\mu}m$) microbump without solder spreading, remaining solder was transformed to $Cu_6Sn_5$ right after bonding and had only a phase transition of $Cu_6Sn_5$ to $Cu_3Sn$ during annealing. Measured activation energies for the growth of the $Cu_3Sn$ phase during the annealing were 0.80 and 0.71eV for Cu/Sn-3.5Ag($6{\mu}m$) and Cu/Sn-3.5Ag($4{\mu}m$), respectively.

• Journal of the KSME
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• v.34 no.5
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• pp.392-398
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• 1994

구조용 고온재료로서 표 2에 나타내듯이 지금까지 니켈과 티타늄 알루미나이드($Ni_3Al$, NiAl, $Ti_3Al$, TiAl에 관하여 집중적인 연구가 진행되어 왔으며 다른 금속간 화합물에 대해서도 광범위한 연구가 진행중이다. 그 예로서 $Co_3Ti$는 800.deg. C에서 최대강도를 보이며 저온에서는 온도가 감소하면서 강도가 다시 증가하면 연성이라는 장점을 지닌 관계로 $MoSi_2$는 높은 융점과 우수한 산화저항력 때문에 $Nb_2Al$은 높은 융점과 경량성 때 문에 복합재료의 matrix로서 최근 주목을 받고 있다. 끝으로 비록 금속간화합물이 취성이라는 단점 때문에 실용화에 많은 문제점이 있으며 본 재료에 관한 연구가 준비 제조공정과정에서 수 소취성화, 고용점온도 취성 등으로 인하여 사용해온 기존의 재료를 보다 좀더 극한 상황에서 가볍고 저렴하게 사용할 수 있는 우주항공 및 지상대체재료로서 개발할 수 있음을 고려할 때 본 재료에 대한 본격적인 연구가 국재 경쟁력강화를 위해 신소재 개발에 부심하는 우리나라에서도 이루어질 필요가 있다.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.59-64
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• 2013

In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.393-397
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• 2001

Fer the purpose of improving ductility of $Al_3$Ti intermetallic compound has potential to industrial application, we investigated formation behavior of cubic Ll$_2$ structure and effect of Mn addition. Nanocrystalline cubic Ll$_2$Al$_3$Ti intermetallic compound, has 10nm size of grain, was fabricated by mechanical alloying for 20hr at the composition of Al-8Mn-25Ti. Ternary cubic Ll$_2$Al$_3$Ti, added Mn, did not showed phase transformation from Ll$_2$ to D0$_{23}$ or D0$_{22}$ unlike binary cubic Ll$_2$Al$_3$Ti and maintained Ll$_2$ structure.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.17-24
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• 2008

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $150^{\circ}C,\;5{\times}10^4\;A/cm^2$ conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only $Cu_6Sn_5$ was observed in the Cu pillar/Sn interface after reflow. However, $Cu_3Sn$ formed and grew at Cu pillar/$Cu_6Sn_5$ interface with increasing annealing and stressing time. The growth kinetics of total($Cu_6Sn_5+Cu_3Sn$) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at $180^{\circ}C$ was $0.28J/m^2$ while it was $3.37J/m^2$ before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump.