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http://dx.doi.org/10.6117/kmeps.2013.20.2.059

Intermetallic Compound Growth Characteristics of Cu/Ni/Au/Sn-Ag/Cu Micro-bump for 3-D IC Packages  

Kim, Jun-Beom (School of Materials Science and Engineering, Andong National University)
Kim, Sung-Hyuk (School of Materials Science and Engineering, Andong National University)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.20, no.2, 2013 , pp. 59-64 More about this Journal
Abstract
In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.
Keywords
Cu/Ni/Au/Sn-Ag/Cu micro-bump; Ni/Au barrier; activation energy; IMC growth;
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Times Cited By KSCI : 4  (Citation Analysis)
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