• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.2
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• pp.5-11
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• 1974

Theoretical analysis is carried out for the beat frequency generation phenomena in the IMPATT diodes an4 the experimental studies are given in parrallel. The theory is based on the space charge modulation effect introduced to the multiplication process by the input signal. Computed results show that the beat frequency output power is linearly dependent upon the signal power and self oscillating power. Also the strong dependence of the output power with respect to the diode negative resistance is found and it turns out that the larger the negative resistance, the stronger the beat frequency output power. Experimental results show a good agreement with the theoretical values. Calculated conversion gain is about -0.4[db] at 10[GHz] and the experimental value shows -6.2[db] below this value. This difference between the theoretical and the experimental values is considered to be the results of the ineffective injection of signal power.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.118-126
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• 1998

A study to improve filling of semiconductor contact holes by enhancement of the directionality of the source beams has been undertaken. The collimation of source beams was improved by the ionized cluster beam deposition technique with modification of the cell geometry. The collimation tested with neutral beam was excellent. But, the Cu flims were grown in a columnar mode due to the lack of surface mobilit of the impinged clusters. A shadow effect also caused cleavage and consequent discontinuity at the steos as films grow. By applying acceleration voltage, the columnar growth in a contact hole of 0.5 $\mu$m diameter and 1 $\mu$m height disappeared and considerable coverage at the side wall of the contacts as well as perfect bottom coverage were observed. These are all due to the assistants of the accelerated ionized clusters with high kinetic energy. Thus we demonstrated that the ICB deposition technique can be used to completely fill sub-half-micron contact holes with high aspect ratio.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.698-701
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• 2013

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.40-50
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• 2010

The studies of PMOS transistors in CMOS technologies are reviewed- focusing on the snapback and breakdown behavior of the parasitic PNP BJTs in high current regime. A new failure mechanism of PMOSFET devices under ESD conditions is also analyzed by investigating various I/O structures in a $0.13\;{\mu}m$ CMOS technology. Localized turn-on of the parasitic PNP transistor can be caused by localized charge injection from the adjacent diodes into the body of the PMOSFET, significantly degrading the ESD robustness of PMOSFETs. Based on 2-D device simulations the critical layout parameters affecting this problem are identified. Design guidelines for avoiding this new PMOSFET failure mode are also suggested.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.77-85
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• 1991

In this study we have investigated surface morphologies of as-deposited silicon films on the various deposition conditions using LPCVD(Low Pressure Chemical Vapor Deposition) System. The processing conditions such as deposition temperature, pressure and flow rate of $SiH_4$ gas were found to determine the surface morphology. The optimum temperature of maximum effective surface area increased with increasing the deposition pressure and the flow rate of $SiH_4$ gas, These experimental results were also in quite good agreement with the equation derived under the assumption that the maximum effective surface area is obtained on the condition of maximum nucleation rate.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.2
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• pp.89-94
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• 2022

In this paper, a discrete-time loop filter(DLF) phase-locked loop with a Frequency Fluctuation Converting Circuit(FFCC) has been proposed. Discrete-time loop filter can improve spur characteristic by connecting the charge pump and voltage oscillator discretely unlike a conventional continuous-time loop filter. The proposed PLL is designed to operate stably by the internal negative feedback loop including the SSC acting as a negative feedback to the discrete-time loop filter of the external negative feedback loop. In addition, the phase noise is further improved by reducing the magnitude of the loop filter output voltage variation through the FFCC. Therefore, the magnitude of jitter has been reduced by 1/3 compared to the conventional structure. The proposed phase locked loop has been simulated with Hspice using the 1.8V 180nm CMOS process.

• Journal of the Korean Electrochemical Society
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• v.17 no.1
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• pp.57-64
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• 2014

Carbon electrodes for capacitive deionization were fabricated through mixing two different carbon powders (activated carbon powder, carbon black) with different particle sizes to investigate physical or electrochemical properties and finally desalination performances of the electrodes with various compositions of two carbon powders in weight and were compared with the electrode consisting of activated carbon. As a result, the electrode structure became more packed as increasing the amount of carbon black and resulted in 10% increase in mesopore fraction. The specific capacitance obtained from cyclic voltammograms of various electrodes showed that the electrode containing carbon black only had 107.4 F/g, while the specific capacitance of the electrode having more amount of carbon black increased and was higher than the one having no carbon black. The results of desalination runs in a capacitive deionization cell exhibited that the electrode having the highest amount of carbon black (1 wt%) in this study had the highest desalting efficiency, and no significant pH variation was observed during the runs. It was analyzed using accumulated charge that the fraction of non-Faraday current increased as the amount of carbon black increased in the electrodes. It can be concluded that the addition of carbon black changed the electrode structure resulting in an increase in the fraction of mesopore and finally enhanced the desalting efficiency by decreasing Faraday current.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.6-10
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• 2006

The sulphur spinel $FeCr_{2-x}M_xS_4$(M=Ga, In) have been studied with Mossbauer spectroscopy, x-ray diffraction (XRD), and vibrating sample magnetometer. The XRB patterns for samples $FeCr_{2-x}M_xS_4$(M=Ga, In: x=0.1, 0.3) reveal a single phase, which the Ga and In ions are partially occupied to the tetrahedral (A) site. The Neel temperature for the Ga substituted samples increases from 180 to 188 K, with increase from x=0.1 to 0.3. While, it decreases from 173 to 160 K, for the In substituted samples of the x=0.1 and 0.3, respectively. The Mossbauer spectra were collected from 4.2 K to room temperature. We have analyzed the Mossbauer spectra using eight Lorentzian lines fitting method for the $FeCr_{2-x}In_xS_4$(x=0.1) at 4.2 K, yielding the 1311owing results; $H_{hf}=146.0kOe,\;{\Delta}E_Q=1.88mm/s,\;\theta=36^{\circ},\;\phi=0^{\circ},\;\eta=0.6$, and R=1.9. The Ga ions enter into the both sites octahedral (B) and tetrahedral (A), simultaneously the same amounts of Fe ions migrate from the A to the B site, this result is an agreement with XRD results, too. The ${\Delta}E_Q$ of the A and B site in Mossbauer spectra of the samples $FeCr_{2-x}Ga_xS_4$(x=0.3) are 0.83 and 2.94mm/s, respectively. While they are 0.56 and 2.36mm/s for the $FeCr_{2-x}In_xS_4$(x=0.3). It is noticeable that the ${\Delta}E_Q$ for the Ga doped samples are larger than that of the corresponding In doped samples, in spite of the larger ionic radius for In ions. The bond lengths of Cr-S, for the Ga and In doped samples (x=0.3) are found to be 2.41 and $2.43\;{\AA}$, respectively. We interpret that the larger covalence effect from the smaller bond length induces a large asymmetric charge distribution. Finally, it gives a large quadrupole interaction.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.302-309
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• 2009

We fabricated a Si nano floating gate memory with Schottky barrier tunneling transistor structure. The device was consisted of Schottky barriers of Er-silicide at source/drain and Si nanoclusters in the gate stack formed by LPCVD-digital gas feeding method. Transistor operations due to the Schottky barrier tunneling were observed under small gate bias < 2V. The nonvolatile memory properties were investigated by measuring the threshold voltage shift along the gate bias voltage and time. We obtained the 10/50 mseconds for write/erase times and the memory window of $\sim5V$ under ${\pm}20\;V$ write/erase voltages. However, the memory window decreased to 0.4V after 104seconds, which was attributed to the Er-related defects in the tunneling oxide layer. Good write/erase endurance was maintained until $10^3$ write/erase times. However, the threshold voltages moved upward, and the memory window became small after more write/erase operations. Defects in the LPCVD control oxide were discussed for the endurance results. The experimental results point to the possibility of a Si nano floating gate memory with Schottky barrier tunneling transistor structure for Si nanoscale nonvolatile memory device.

• Journal of the Korean Chemical Society
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• v.41 no.6
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• pp.277-283
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• 1997

Platinum(II) complexes(where, $[Pt(L)_2X_2]$; L=isoxazole(isox), 3,5-dimethylisoxazole(3,5-diMeisox), 3-methyl,5-phenylisoxazole(3-Me,5-Phisox), and 4-amino-3,5-dimethylisoxazole(4-ADI); X=Cl, Br) with planar ligands are investigated on antitumor activity by MM2 and EHMO calculations. It was found that, the net atomic charges of the halogen atoms in all of cis-, trans-isomers are greater than that of the nitrogen with planar form, indicating that ionic character of Pt-X bond is greater than that of Pt-N. Also, the ${\sigma}MO$ energy level($E{\sigma}_{(Pt-X)}$) of the interaction between $d_{x2-y2}$ orbital of Pt atom and $p_x$ orbital of X found to be higher than that of between $d_{x2-y2}$ orbital of Pt atom and $p_x$ orbital of N about all the complexes. It is found that bond strength of between Pt and X atom is weaker than that of between Pt and N atom. The ${\sigma}MO$ energy level($E{\sigma}_{(Pt-X)}$) of trans- complexes found to be higher than that of cis- complexes, as a result of bond strength of Pt-X in cis- and trans-complexes, for all the complexes. The degree of dissociation of X atom in Pt-X bond for trans-complexes are related to antitumor activity and the logIA value of inhibitory activity coefficient(IA).