• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.8
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• pp.863-867
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• 2014

In this study, an acoustic emission (AE) sensor was used for measuring the abrasive and molecular-scale phenomena in chemical mechanical polishing (CMP). An AE sensor is a transducer that converts a mechanical wave into an electrical signal, and is capable of acquiring high-level frequencies from materials. Therefore, an AE sensor was installed in the CMP equipment and the signals were measured simultaneously during the polishing process. In this study, an AE monitoring system was developed for investigating the sensitivity of the AE signal to (a) the variations in the material properties of the pad, slurry, and wafer and (b) the change in conditions during the CMP process. This system was adapted to Oxide and Cu CMP processes. AE signal parameters including AE raw frequency, FFT, and amplitude were analyzed for understanding the abrasive and molecular-level phenomena in the CMP process. Finally, we verified that AE sensors with different bandwidths could function in complementary ways during CMP process monitoring.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.1-5
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• 2004

A multi-layer flexible substrate is composed of copper(Cu)/polyimide that are known as good electrical conductivity, and low dielectric constant, respectively. In this study. conductor line of $5{\mu}m$-pitch was successfully fabricated without non-uniform pattern shape by electroplating copper and coating polyimide on patterned stainless steel. For multi-layer flexible substrate, via holes were drilled by UV laser and filled with electroplating copper and tin. And then, the PI layer with vias and conductor lines was stripped from stainless steel substrate. The PI layers were laminated at once with careful alignment between layers. Solid state reaction between tin and copper during lamination formed the intermetallic compounds of $Cu_6Sn_5$($\eta$-phase) and $Cu_3Sn$($\epsilon$-Phase) and achieved a complete inter-connection by vertically positioning the plugged via holes on via pad. The via formation process has several advantages; such as better electrical property and lower cost than V type via and paste via.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.55-59
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• 2012

Defects such as voids or seams are frequently found in TSV via filling process. To achieve defect-free copper via filling, organic additives such as suppressor, accelerator and leveler were necessary in a copper plating bath. However, by-products stemming from the breakdown of these organic additives reduce the lifetime of the devices and plating solutions. In this research, the effects of levelers on copper electrodeposition were investigated without suppressor and accelerator to lower the concentration of additives. Threelevelers(janus green B, methylene violet, diazine black) were investigated to study the effects of levelers on copper deposition. Electrochemical behaviors of these levelers were different in terms of deposition rate. Filling performances were analyzed by cross sectional images and its characteristics were different with variations of levelers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.318-326
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• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.20-27
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• 1997

We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.903-906
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• 2011

The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

• Resources Recycling
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• v.9 no.3
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• pp.3-12
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• 2000

A Study on the cementation for the recovery of Cu, Ni and Co with Mn metallic powders in leaching solution from the manganese nodule that have removed Fe ions was studied. The results showed that the recovery efficiencies of metal ions with Mn powders increased when the temperature, pH and the concentration of chloride ions were increased in mixed solution. And the recovery efficiencies of Cu was 98% and not changed with the addition amounts of Mn powders but, in case of Co and Ni, the recovery efficiencies were increased with the addition amounts. The particle size of precipitate was about $5\mu\textrm{m}$. From the results of experiment we proposed the two-step cementation process for the recovery of Cu, Ni and Co with Mn powders.

• Resources Recycling
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• v.16 no.3 s.77
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• pp.27-33
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• 2007

It is very important in the view point of resource recycling to recover valuable metals such as copper and tin from waste electric and electronic scrap. The waste electric and electronic scrap contains significant amounts of copper, tin, and so on. In this study, a new process for extracting copper and tin contained in the waste electric and electronic scrap using waste copper slag which is generated from the melting furnace of copper smelter was presented. Advantage of the proposed process is to reuse waste copper slag instead of new fluxes as slag formatives. In each experiment, the waste electric and electronic scrap and waste copper slag were melted inputting suitable amount of CaO as an additional flux. Up to 95% of copper and 85% of tin in the raw material were extracted in a Cu-Fe-Sn alloy phase.

• Resources Recycling
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• v.31 no.5
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• pp.59-66
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• 2022

To investigate the rate-determining step of nickel, cobalt and copper electrowinning, experiments were conducted by varying the electrolyte temperature and agitation speed using a rotating disc electrode. Analyzing the rate-determining step by calculating the activation energy in the electrowinning process, it was found that nickel electrowinning is controlled by a mixed mechanism (partly by chemical reaction and partly by mass transport), cobalt is controlled by chemical reaction, and copper is controlled by mass transfer. Electrowinning of nickel, cobalt and copper was performed by varying the electrolyte temperature and agitation speed, and the comparison of the current efficiencies was used the determine the rate-determining step.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.132.1-132.1
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• 2017

본 연구에서는 투명전극 제조를 목적으로 전기방사법을 이용하여 미세구리 패턴을 형성하는 방법에 대하여 연구하였다. $Ag^+$이온이 용해된 폴리비닐부티랄(PVB) 고분자 용액을 폴리에틸렌 테레프탈레이트(PET)와 같은 투명기판 위에 전기방사 하여 $Ag^+$이온/PVB 복합나노와이어를 제조한 후 이를 UV 조사로 환원하여 선택적으로 촉매를 형성하였다. 이후 연속적인 무전해 구리 도금을 통하여 촉매 위에 미세구리배선을 형성함으로써, 투명전극을 제조하였다. 개발 공정을 통해 제조된 투명전극은 기존 Ag나노와이어 기반 투명전극에서 발생하던 접촉저항에 대한 문제를 해결함으로써 전기적, 광학적 특성이 우수한 차세대 유연 디스플레이에 적용 가능성을 보여주었다.