• 한국재료학회지
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• 제15권11호
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• pp.705-710
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• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• 대한금속재료학회지
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• 제49권11호
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• pp.845-852
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• 2011

The Spark Plasma Sintering(SPS) method offers a means of fabricating a sintered-body having high density without grain growth through short sintering time and a one-step process. A titanium compact having high density and purity was fabricated by the SPS process. It can be used to fabricate a Ti sputtering target with controlled parameters such as sintering temperature, heating rate, and pressure to establish the optimized processing conditions. The compact/target(?) has a diameter of ${\Phi}150{\times}6.35mm$. The density, purity, phase transformation, and microstructure of the Ti compact were analyzed by Archimedes, ICP, XRD and FE-SEM. A Ti thin-film fabricated on a $Si/SiO_2$ substrate by a sputtering device (SRN-100) was analyzed by XRD, TEM, and SIMS. Density and grain size were up to 99% and below $40{\mu}m$, respectively. The specific resistivity of the optimized Ti target was $8.63{\times}10^{-6}{\Omega}{\cdot}cm$.

• 한국표면공학회지
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• 제52권4호
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• pp.194-202
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• 2019

A systematic investigation was made on the influence of processing parameters such as gas composition and treatment temperature on the surface characteristics of hardened layers of low temperature plasma nitrided 316L Austenitic Stainless Steel. Various nitriding processes were conducted by changing temperature ($370^{\circ}C$ to $430^{\circ}C$) and changing $N_2$ percentage (10% to 25%) for 15 hours in the glow discharge environment of a gas mixture of $N_2$ and $H_2$ in a plasma nitriding system. In this process a constant pressure of 4 Torr was maintained. Increasing nitriding temperature from $370^{\circ}C$ to $430^{\circ}C$, increases the thickness of S phase layer and the surface hardness, and also makes an improvement in corrosion resistance, irrespective of nitrogen percent. On the other hand, increasing nitrogen percent from 10% to 25% at $430^{\circ}C$ decreases corrosion resistance although it increases the surface hardness and the thickness of S phase layer. Therefore, optimized condition was selected as nitriding temperature of $430^{\circ}C$ with 10% nitrogen, as at this condition, the treated sample showed better corrosion resistance. Moreover to further increase the thickness of S phase layer and surface hardness without compromising the corrosion behavior, further research was conducted by fixing the $N_2$ content at 10% with introducing various amount of $CH_4$ content from 0% to 5% in the nitriding atmosphere. The best treatment condition was determined as 10% $N_2$ and 5% $CH_4$ content at $430^{\circ}C$, where the thickness of S phase layer of about $17{\mu}m$ and a surface hardness of $980HV_{0.1}$ were obtained (before treatment $250HV_{0.1}$ hardness). This specimen also showed much higher pitting potential, i.e. better corrosion resistance, than specimens treated at different process conditions and the untreated one.

• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• 접착 및 계면
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• 제20권2호
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• pp.66-70
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• 2019

소수성 폴리프로필렌 섬유의 표면을 상압 플라즈마 공정을 이용하여 표면처리하였다. 친수성으로 개질된 섬유를 수용성 폴리비닐프롤리돈 (poly(N-vinylpyrrolidone, PVP) 코팅액에 딥코팅하여 PVP 막을 형성하였다. 섬유 표면에 코팅된 PVP 막은 15 kGy 선량의 전자 빔 조사를 통해 가교되어, 폴리프로필렌 섬유의 표면이 PVP 하이드로젤로 균일하게 코팅된 것을 확인하였다. PVP 하이드로젤 코팅막의 두께는 코팅액의 농도를 조절하여 제어할 수 있었다. 단계적인 표면처리, PVP 코팅, 그리고 하이드로젤 막의 형성에 따른 특성은 접촉각, 전자현미경, 광학현미경 등을 통해 분석되었다.

• 한국표면공학회지
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• 제51권6호
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• pp.415-420
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• 2018

The possibility of an improvement in heat dissipation performance of aluminum alloy heat sink for shipboard LED luminaries through plasma electrolytic oxidation (PEO) was investigated. Four different PEO coatings were produced on aluminum alloy 5052 in silicate based alkaline solution by varying current density ($50{\sim}200mA/cm^2$). On voltage-time response curves, three stages were clearly distinguished at all current densities, namely an initial linear increase, slowdown of increase rate, and steady state(constant voltage). It was found that the increase in current density caused the breakdown voltage to increase. Two different surface morphologies - coralline porous structure and pancake structure - were confirmed by SEM examination. The coralline porous structure was predominant in the coatings produced at lower current densities (50 and $100mA/cm^2$) while under high current densities(150 and $200mA/cm^2$) the pancake structure became dominant. The coating thickness was measured and found to be in a range between about $13{\mu}m$ and $44{\mu}m$, showing increasing thickness with increasing current density. As a result, $100mA/cm^2$ was proposed as an effective process parameter to improve the heat dissipation performance of aluminum alloy heat sink, which could lower the LED operating temperature by about 30%.

• 보존과학회지
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• 제35권3호
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• pp.187-196
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• 2019

강릉 굴산사지에서 출토된 청동기 25점은 에너지분광분석기(EDS)와 전자탐침X선분석기(EPMA)를 이용하여 성분분석해준 결과 출토된 청동기가 구리-주석의 2원계 혹은 구리-주석-납의 3원계 합금임을 알 수 있다. 합금 이후 주조 혹은 단조공정이 진행되었으며 청동고리의 경우, 금도금이 되어있음을 알 수 있다. 납 동위원소는 열이온화질량분석기(TIMS)와 레이저삭막 유도결합플라즈마질량분석기(LA-MC-ICPMS)를 이용해 주었으며, 분석결과 출토지와 근거리의 납 원료를 사용한 것을 확인하였다. 본 연구는 연구 데이터가 많지 않은 강릉지역 청동기의 제작기술 및 산지추정에 연구 목적이 있으며, 굴산사 실체의 확인 및 12~13세기 고려시대 청동기의 분석자료 구축에 기여할 것으로 생각된다.

• 대한금속재료학회지
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• 제48권1호
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• pp.49-56
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• 2010

This study investigated how the surface of Al-12wt.%Si alloy modified by the plasma electrolytic oxidation process (PEO). The PEO process was performed in an electrolyte with sodium hexametaphsphate as a conducting salt, and the effect of ammonium metavanadate on variations in the morphology of electrochemically generated oxide layers on the alloy surface was investigated. It is difficult to form a uniform passive oxide layer on Al alloys with a high Si content due to the differences in the oxidation behavior of the silicon-rich phase and the aluminum-rich phase. The oxide layer covered the entire surface of the Al-12WT.%Si alloy uniformly when ammonium metavanadate was added to the electrolyte. The oxide layer was confirmed as a mixture of $V_2O_3$ and $V_2O_5$ by XPS analysis. In addition, the oxide layer obtained by the PEO process with ammonium metavanadate exhibited a black color. Application of this surface modification method is expected to solve the problem of the lack of uniformity in the coloring of oxide layeres caused by different oxidation behaviors during a surface treatment.

• 한국재료학회지
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• 제31권7호
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• pp.392-396
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• 2021

Expensive PCBN or ceramic cutting tools are used for processing of difficult-to-cut materials such as Ti and Ni alloy materials. These tools have the problem of breaking easily due to their high hardness but low fracture toughness. To solve these problems, cutting tools that form various coating layers are used in low-cost WC-Co hard material tools, and research on various tool materials is being conducted. In this study, binderless-WC, WC-6 wt%Co, WC-6 wt%Co-1 wt% Mo₂C, and WC-6 wt%Co-2.5 wt% Mo₂C hard materials are densified using horizontal ball milled WC-Co, WC-Co-Mo₂C powders, and spark plasma sintering process (SPS process). Each SPSed Binderless-WC, WC-6 wt%Co-1 wt% Mo₂C, and WC-6 wt%Co-2.5 wt% Mo₂C hard materials are almost completely dense, with relative density of up to 99.5 % after the simultaneous application of pressure of 60 MPa and almost no significant change in grain size. The average grain sizes of WC for Binderless-WC, WC-6 wt%Co-1 wt% Mo₂C, and WC-6 wt%Co-2.5 wt% Mo₂C hard materials are about 0.37, 0.6, 0.54, and 0.43 ㎛, respectively. Mechanical properties, microstructure, and phase analysis of SPSed Binderless-WC, WC-6 wt%Co-1 wt% Mo₂C, and WC-6 wt%Co-2.5 wt% Mo₂C hard materials are investigated.