• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.3
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• pp.1700-1706
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• 2014

In this paper, a step down converter for LED backlight of mobile application has been proposed. The converter which is operated with 4 MHz high switching frequency is capable of reducing mounting area of passive devices consists of a power stage and a control block. Circuit elements of the power stage are inductor, output capacitor, MOS transistors and feedback resistors. The control block consists of pulse width modulator, error amplifier and oscillator etc. Proposed step down converter has been designed and verified using a $0.35{\mu}m$ 1-poly 4-metal BCD process technology. Simulation results show that the output voltage is 1.8 V in 3.7 V input voltage, output current 100 mA which is larger than 25 ~ 50 mA in conventional 500 KHz driven converter when the duty ratio is 0.4.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2276-2280
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• 2008

In this paper, we present thermal dependancy of LED package element by changing temperature of MCPCB for design high efficiency LED lamp, and confirmed influence of LED chip against temperature with analysis of thermal resistance and thermal capacitance. As increasing temperature, WPOs were decreased from 25 to 22.5 [%] and optical power were also decreased. that is decreased reason of optical power that forward voltage was declined by decrease of energy bandgap. Therefore optical power by temperature of MCPCB should consider to design lamp for street light and security light. Moreover, compensation from declined optical efficiency is demanded when LED package is composed. Also, thermal resistances from chip to metal PCB were decreased from 12.18 to 10.8[$^{\circ}C/W$] by changing temperature. Among the thermal resistances, the thermal resistance form chip to die attachment was decreased from 2.87 to 2.5[$^{\circ}C/W$] and was decreased 0.72[$^{\circ}C/W$] in Heat Slug by chaning temperature. Therefore, because of thermal resistance gap in chip and heat slug, reliability and endurance of high power LED affect by increasing non-radiative recombination in chip from heat.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1613_1614
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• 2009

In this paper, thermal movement of high power LED on the MCPCB is analyzed with structural function and CFdesign V10 program. thermal resistance is decreased as 10.1 [$^{\circ}C$/W] in MCPCB from 12.2 [$^{\circ}C$/W] in LED package. Junction temperature which is calculated with thermal computational analysis program shows 85.113 [$^{\circ}C$] and almost same to measured data.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2196-2198
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• 2005

The luminous intensity distribution of a 1W high-power LED with a wide view angle should be concentrated to be used as a light source for an automotive reading lamp. In this paper, an optical lens made of PMMA is simulated by using an optical design software for that purpose. As the result, with the help of the devised lens, the reading light gives over 80 lx at the center of a target surface of radius of 0.2m located below 0.5m from the lamp, and a minimum of 20 lx at the perimeter of the target surface. Thus, a 1W high-power LED with an appropriate lens would suffice for an automotive reading lamp.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.35-36
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• 2014

본 논문은 Rear Combination LED Lamp 동작 시 전류와 광출력의 변동폭를 최소화하는 LED 조명광원의 특성을 고려하여 정전류 회로의 구현이 유리한 DC/DC 컨버터의 EMC 고효율 필터를 제안하여 외부의 전자계로부터 장애를 유발하지 않고, 일정 수준의 전자파 환경에서도 오동작 없이 원할하게 작동될 수 있도록 관련 기기 상호간의 전파 환경을 개선하는 고효율 Filter를 제안 하고자 한다. 본 논문에서 제안한 Filter는 EMI 측정을 통해 타당성과 우수성을 검증하였다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• Korean Journal of Optics and Photonics
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• v.32 no.5
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• pp.230-234
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• 2021

Relief of thermal stress has received great attention, to improve the beam quality and stability of high-power laser diodes. In this paper, we investigate a microtrench structure engraved around a laser-diode chip-on-submount (CoS) to relieve the thermal stress on a laser-diode bar (LD-bar), using the SolidWorks® software. First, we systematically analyze the thermal stress on the LD-bar CoS with a metal heat-sink holder, and then derive an optimal design for thermal stress relief according to the change in microtrench depth. The thermal stress of the front part of the LD-bar CoS, which is the main cause of the "smile effect", is reduced to about 1/5 of that without the microtrench structure, while maintaining the thermal resistance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.10-16
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• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1459-1461
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• 1996

The optical and electrical properties of High Power AlGaAs/AlGaAs Infrared LED with DDH( Double power Double Hetero Junction) structure are investigated. The high power LED is recently studied in order to apply to high speed communication devices. The power out of AlGaAs/AlGaAs with DDH structure is 13.0[mW], the forward voltage is 1.45[V], and the average decrease rate of power out is about 5[%] after aging test. The optical and electrical properties of DDH structure LED are superior than that of SH structured LED. The DDH structured LED is suitable to the high speed communication devices.

• Journal of Dental Rehabilitation and Applied Science
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• v.32 no.2
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• pp.117-122
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• 2016

Purpose: Gingival whitening is one of dental treatment purposes which is close to treating aesthetic disorders. Initial gingival whitening treatment was done by dermabrasion using a high power Diode Laser. However, this treatment method cannot be free from any infection or pain after the treatment. Therefore, we have decided to progress gingival whitening treatment using a low power LED laser. Materials and Methods: The laser was irradiated on pork meat then the safety of output power, temperature change and skin denaturalization was measured. Bison 365 nm LED laser was irradiated on oral mucosal pigment of a 15 - 20 kg beagle for 15 min for 1 - 2 weeks, one or two times each. Any pigment loss was checked through Hematoxyline-Eosin staining. Results: The melanin pigments at the area of 365 nm LED Laser irradiation were decreased. Conclusion: The 365 nm LED Laser proposed in this study is considered to compensate the bleaching effect achieved by either using Diode laser or surgical methods.