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http://dx.doi.org/10.6117/kmeps.2014.21.1.001

Properties of High Power Flip Chip LED Package with Bonding Materials  

Lee, Tae-Young (Welding and Joining Technology Center, Korea Institute of Industrial Technology)
Kim, Mi-Song (Welding and Joining Technology Center, Korea Institute of Industrial Technology)
Ko, Eun-Soo (EI Lighting)
Choi, Jong-Hyun (EI Lighting)
Jang, Myoung-Gi (EI Lighting)
Kim, Mok-Soon (Dept. of Metallurgical Engineering, Inha University)
Yoo, Sehoon (Welding and Joining Technology Center, Korea Institute of Industrial Technology)
Publication Information
Journal of the Microelectronics and Packaging Society / v.21, no.1, 2014 , pp. 1-6 More about this Journal
Abstract
Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.
Keywords
LED; Flip-chip bonding; Au-Sn; Sn-Ag-Cu; Thermal resistance;
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Times Cited By KSCI : 3  (Citation Analysis)
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