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Improvement of Electrical/optical Characteristics Using Mg-doped GaN Spacers and Quantum Barriers for Nonpolar GaN light-emitting Diodes  

Kim, Dong-Ho (School of Electronics and Electrical Engineering, Korea University)
Son, Sung-Hun (School of Electronics and Electrical Engineering, Korea University)
Kim, Tae-Geun (School of Electronics and Electrical Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.7, 2011 , pp. 10-16 More about this Journal
Abstract
We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.
Keywords
Nonpolar; gallium-nitride(GaN); Light-emitting diodes(LEDs); spacer; quantum barrier(QB);
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