• Title/Summary/Keyword: 가우스 함수

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Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET Using Gaussian Distribution (가우스분포를 이용한 이중게이트 MOSFET의 드레인유기장벽감소 분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.2
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    • pp.325-330
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    • 2012
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

Analysis for Gate Oxide Dependent Subthreshold Swing of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 문턱전압이하 스윙에 대한 게이트 산화막 의존성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.4
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    • pp.885-890
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    • 2014
  • This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

Analysis for Potential Distribution of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 전위분포 분석)

  • Jung, Hakkee;Lee, Jongin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.691-694
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    • 2013
  • This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

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Analysis for Relation of Oxide Thickness and Subthreshold Swing of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 산화막 두께와 문턱전압이하 스윙의 관계 분석)

  • Jung, Hakkee;Cheong, Dongsoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.698-701
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    • 2013
  • This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

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Numerically Efficient Evaluation of MoM Matrix in Conjunction with the Closed-form Green s Functions in Analysis of Multi-layered Planar Structures (다층 평판구조체 해석시 Closed-form 그린함수와 함께한 모멘트 행렬의 효율적인 수치계산)

  • 이영순;김병철;조영기
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.1
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    • pp.92-98
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    • 2001
  • When analyzing the scatting problem of multi-layered planar structures using closed-form Green's function, one of the main difficulties is that the numerical integrations for the evaluation of diagonal matrix elements converge slowly and are not so stable. Accordingly, even when the integration fur the singularity of type $e^{-jkr}/{\gamma}$, corresponding to the source dipole itself, is performed using such a method, this difficulty persists in the integration corresponding to the finite number of complex images. In order to resolve this difficulty, a new technique based upon the Gaussian quadrature in polar coordinates for the evaluation of the two-dimensional generalized exponential integral is presented. Stability of the algorithm and convergence is discussed. Performance is demonstrated for the example of a microstrip patch antenna.

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Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET Using Gaussian Distribution (가우스분포를 이용한 이중게이트 MOSFET의 드레인유기장벽감소분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.878-881
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    • 2011
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

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Discrimination of Unknown Digitally Modulated Signals (미지의 디지털 변조 신호 식별)

  • 신용조;이종헌;진용옥
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.3
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    • pp.268-276
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    • 1992
  • In this paper, we present an discrimination method of unknown digital modulated signals in noisy communication environment. We propose the use of an identification procedure based on time domain signal parameters. First, We extract instantaneous envelope. Frequency and difference phase as the basic feature informations from received signals. In order to identify signals using the extracted feature informations, we design the two dimensional feature space. The extracted feature infomations are mapped into2Dfeature space using 2D feature points. The procedure has been tested by simulations on a computer in noisy communication environment, and the considered signals are ASK-W, ASK-4, BPSK, QPSK, 8PSK, FSK, and QAM.

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Optimal Trajectory Design of Descent/Ascent phase for a Lunar Lander With Considerable Sub-Phases (Sub-Phase를 고려한 달착륙선의 Descent/Ascent phase 최적 궤적 생성)

  • Jo, Sung-Jin;Min, Chan-Oh;Lee, Dae-Woo;Cho, Kyeum-Rae
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.38 no.12
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    • pp.1184-1194
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    • 2010
  • The descent and ascent phases for a lunar lander are composed of several phases. Accordingly, the constraints and control values adequate for each phase are required in order to generate optimal lander's trajectory. The optimal trajectories for descent and ascent phases are generated by the cost function to minimize fuel consumption & attitude variation rates. In this paper, the optimal control problem to make trajectory uses Gauss pseudo-spectral method which is one of the direct approach method. This problem generates lander's reference trajectory, states and controls.

Static and Dynamic Analyses of Bending Problems Using 3-Dimensional 10-Node Equivalent Element (3차원 10절점-상당요소에 의한 굽힘문제의 정적.동적해석)

  • 권영두;윤태혁
    • Computational Structural Engineering
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    • v.10 no.4
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    • pp.117-130
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    • 1997
  • In this paper, a modified 10-node equivalent solid element(MQM10 element), which has smallest degrees of freedom among 3-dimensional solid elements accounting bending deformation as well as extensional and shear deformations of isotropic plates, is proposed. The proposed MQM10 element exhibits stiffer bending stiffness due to the reduction of degrees of freedom from 20-node element or Q11 element. As an effective way to correct the relative stiffness stiffening phenomenon, the modification equation of Gauss sampling points is proposed. The quantity of modification is a function of Poisson's ratio. The effectiveness of MQM10 element is tested by applying it to several examples. It is noted that the results of static and free vibration analysis of isotropic plates using MQM10 elements show a good agreement with those using 20-node element.

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Relation between folding and unfolding paper of rectangle and (0,1)-pattern (사각형 종이의 접고 펼친 흔적과 (0,1)-패턴의 관계성)

  • Lee, Sung-Gye;Kim, Jin-Soo;Choi, Won
    • Communications of Mathematical Education
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    • v.23 no.3
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    • pp.507-522
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    • 2009
  • In general, we do fold paper and unfold, it remain paper traces. We can be obtained by using rectangular paper, a mathematical fact and the program had a combination. Depending on the direction of the rectangle, folding paper in the form of variety shows valley and ridge signs of the appearance of this paper. By using (0,1)-code and (0,1)-matrix, we study four kinds of research. Therefore, traces of this view upside down rectangle folding paper how to fold inductive reasoning ability of the code and explore the relationship of traces. Finally, the mathematical content and program development can practice in the field.

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