• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2011.04a
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• pp.357-361
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• 2011

본 논문에서는 확률적 불확실성을 포함한 손상 장에서 강성저감 효과를 추정하는 방법을 제안하였다. 실제 교량 구조물에 분포된 손상 장은 매우 불확실하며 손상의 위치와 형상 또한 정확히 알 수 없는 경우가 많다. 그러나 대부분의 손상 추정 문제는 균열이나 손상의 위치와 형상을 기지의 주어진 정보로 가정하고 손상을 추정한다. 제안 기법에서는 이러한 손상의 위치와 형태가 본질적으로 불확실하다는 가정 하에 이 불확실성을 수정 가우스 강성 저감 분포 함수를 도입하여 기술한다. 교량에 국부적으로 발생된 손상은 교량의 요소강성의 저감 분포로 변환되어 손상이 발생한 전체 시스템의 강성을 표현하고 이를 통해 손상이 발생한 시스템의 전체 응답을 해석할 수 있게 된다. 수정 가우스 강성 저감 분포 함수는 손상 분포의 개략적 중심을 표현하는 평균 변수와 강성 저감의 비국소적 분포 특성을 묘사하는 표준편차 변수, 손상 중심의 손상 정도를 표현하는 강성저감 변수로 구성된다. 본 논문에서는 손상 장에서 손상의 위치나 형태에 대한 확률적 불확실성을 기술하는 수정 가우스 강성 저감 분포 함수를 포함한 유한요소모델을 정식화하여 제시한다. 또한 단일 또는 복합 균열로 인해 교량 구조물에 국부적인 손상이 야기된 경우에 대한 수치 예제를 통하여 균열 등에 대한 정보가 불확실하더라도 수정 가우스 강성 저감 분포 함수를 통해 강성 저감 효과가 분석될 수 있음을 확인하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.4
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• pp.903-908
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• 2015

This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.681-684
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The subthreshold swing has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the subthreshold swings have been analyzed according to the shape of Gaussian function.

• Proceedings of the KIEE Conference
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• 1997.07a
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• pp.15-17
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• 1997

에버�� 함수는 상호자계 축을 따라 가우스 분포를 가지므로 정식화될 수 있다. 본 연구에서는 에버렐 함수의 정식화 원리를 설명하고, 오차를 최소화하기 위해 최소 자승법을 도입한다. 이로부터 얻은 에버렐 함수로부터 히스테리시스 루프를 시뮬레이션하고, 이를 통해 제안된 방법의 타당성을 확인한다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.716-718
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.142-145
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• 1998

It is shown that the optical system with Gaussian pupil e, diffraction amplitude distribution is not affected by the presence of residual aberrations. The case of spherical aberration is treated, as an example, and the complex diffraction amplitude distribution at the neighbourhood of the image point is described analytically by using a recurrence formula.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1260-1265
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• Journal of KIISE:Information Networking
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• v.29 no.5
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• pp.553-561
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• 2002

We present a novel service discipline, called linear service discipline, to serve multiple QoS queues sharing a resource and analyze its properties. The linear server makes the output traffic and the queueing dynamics of individual queues as a linear function of its input traffic. In particular, if input traffic is Gaussian, the distributions of queue length and output traffic are also Gaussian with their mean and variance being a function of input mean and input power spectrum (equivalently, autocorrelation function of input). Important QoS measures including buffer overflow probability and queueing delay distribution are also expressed as a function of input mean and input power spectrum. This study explores a new direction for network-wide traffic management based on linear system theories by letting us view the queueing process at each node as a linear filter.