• 제목/요약/키워드: (W,Ti)C

검색결과 563건 처리시간 0.029초

나노구조 (W,Ti)C-Graphene 복합재료 급속소결 (Rapid Sintering of Nanocrystalline (W,Ti)C-Graphene Composites)

  • 김성은;손인진
    • 대한금속재료학회지
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    • 제56권12호
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    • pp.854-860
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    • 2018
  • In spite of the many attractive properties of (W,Ti)C, its low fracture toughness limits its wide application. To improve the fracture toughness generally a second phase is added to fabricate a nanostructured composite. In this regard, graphene was considered as the reinforcing agent of (W,Ti)C. (W,Ti)C-graphene composites that were sintered within 2 min using pulsed current activated heating under a pressure of 80 MPa. The rapid consolidation method allowed retention of the nano-scale microstructure by blocking the grain growth. The effect of graphene on the hardness and microstructure of the (W,Ti)C-graphene composite was studied using a Vickers hardness tester and FE-SEM. The grain size of (W,Ti)C was reduced remarkably by the addition of graphene. Furthermore, the hardness decreased and the fracture toughness improved with the addition of graphene.

초고온 MEMS용 다결정 3C-SiC의 Ohmic Contact 특성 (Ohmic contact characteristics of polycrystalline 3C-SiC for high-temperature MEMS applications)

  • 정귀상;온창민
    • 센서학회지
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    • 제15권6호
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    • pp.386-390
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    • 2006
  • This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

Room-temperature tensile strength and thermal shock behavior of spark plasma sintered W-K-TiC alloys

  • Shi, Ke;Huang, Bo;He, Bo;Xiao, Ye;Yang, Xiaoliang;Lian, Youyun;Liu, Xiang;Tang, Jun
    • Nuclear Engineering and Technology
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    • 제51권1호
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    • pp.190-197
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    • 2019
  • W-K-TiC alloys with different titanium carbide concentrations (0.05, 0.1, 0.25, 0.5, 1, 2) wt.% were fabricated through Mechanical Alloying and Spark Plasma Sintering. The effects of the addition of nano-scaled TiC particles on the relative density, Vickers micro-hardness, microstructure, crystal information, thermal shock resistance, and tensile strength were investigated. It is revealed that the doped TiC nano-particles located at the grain boundaries. The relative density and Vickers micro-hardness of W-K-TiC alloys was enhanced with TiC addition and the highest Vickers micro-hardness is 731.55. As the TiC addition increased from 0.05 to 2 wt%, the room-temperature tensile strength raised from 141 to 353 MPa. The grain size of the W-K-TiC alloys decreased sharply from $2.56{\mu}m$ to 330 nm with the enhanced TiC doping. The resistance to thermal shock damage of W-K-TiC alloys was improved slightly with the increased TiC addition.

Effect of C/Ti Atomic Ratio of TiCx Raw Powder on the Properties of Ti-Mo-W-TiC Sintered Hard Alloy

  • Nakahara, Kenji;Sakaguchi, Shigeya
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.109-110
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    • 2006
  • We have studied the effect of C/Ti atomic ratio of TiCx (x=0.5, 0.75 and 1.0) raw powder on the properties of the Ti-Mo-WTiC sintered hard alloy. The decrease of C/Ti atomic ratio accelerated the densification in the sintering process. The hardness was remarkably improved up to 1350HV with decreasing the C/Ti atomic ratio because of increase of TiCx phase volume content and its fine dispersion. From the results of electro-chemical tests in acid and 3% NaCl solutions, it was obvious that every alloy had excellent corrosion resistance, which meant about 200 times better than that of WC-Co cemented carbide.

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WO3-TiH2 혼합분말의 반응처리 및 방전 플라스마 소결에 의한 W-Ti 치밀체 제조 (Fabrication of Densified W-Ti by Reaction Treatment and Spark Plasma Sintering of WO3-TiH2 Powder Mixtures)

  • 강현지;김헌주;한주연;이윤주;정영근;오승탁
    • 한국재료학회지
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    • 제28권9호
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    • pp.511-515
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    • 2018
  • W-10 wt% Ti alloys that have a homogeneous microstructure are prepared by thermal decomposition of $WO_3-TiH_2$ powder mixtures and spark plasma sintering. The reduction and dehydrogenation behavior of $WO_3$ and $TiH_2$ are analyzed by temperature programmed reduction and a thermogravimetric method, respectively. The X-ray diffraction analysis of the powder mixture, heat-treated in an argon atmosphere, shows W- oxides and $TiO_2$ peaks. Conversely, the powder mixtures heated in a hydrogen atmosphere are composed of W, $WO_2$ and $TiO_2$ phases at $600^{\circ}C$ and W and W-rich ${\beta}$ phases at $800^{\circ}C$. The densified specimen by spark plasma sintering at $1500^{\circ}C$ in a vacuum using hydrogen-reduced $WO_3-TiH_2$ powder mixtures shows a Vickers hardness value of 4.6 GPa and a homogeneous microstructure with pure W, ${\beta}$ and Ti phases. The phase evolution dependent on the atmosphere and temperature is explained by the thermal decomposition and reaction behavior of $WO_3$ and $TiH_2$.

W-TiN 복층 전극 소자에서 TiN 박막 형성 조건에 따른 특성 분석 (Characteristics of W-TiN Gate Electrode Depending on the Formation of TiN Thin Film)

  • 윤선필;노관종;양성우;노용한;김기수;장영철;이내응
    • 한국진공학회지
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    • 제10권2호
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    • pp.189-193
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    • 2001
  • TiN을 불소의 확산 방지막으로 사용한 W-TiN 복층 게이트 소자의 물리적.전기적 특성 변화를 살펴보았다. TiN 스퍼터링 증착시 $N_2$/Ar 가스 비율이 증가할수록 TiN 박막은 N-과다막이 되어 비저항이 증가하였으나, W-TiN복층 구조에서는 $N_2$/Ar가스 비율이 증가할수록 상부 텅스텐 박막의 결정화가 증가하여 비저항이 감소하였다. 한편, 같은 $N_2$/Ar 비율의 경우, TiN 박막 열처리 온도 변화(600~$800^{\circ}C$)에 무관하게 W(110) 방향으로 우선 배향된 결정 구조를 보였다. 누설 전류 특성은 TiN증착시 $N_2$/Ar 비율 변화에 무관하게 우수하였으며, TiN을 확산 방지막으로 사용함으로서 순수 텅스텐 전극만을 적용시 나타나는 초기 저전계 누설 특성을 향상시킬 수 있음을 확인하였다.

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Co 액상 내에 공존하는 (Ti,W)(C,N)과 WC입자의 성장 거동 (Growth Behavior of (Ti,W)(C,N) and WC grains in a Co Matrix)

  • 이보아;윤병권;강석중
    • 한국분말재료학회지
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    • 제11권2호
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    • pp.165-170
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    • 2004
  • Growth behavior of two different types of grains, faceted and rounded, in a liquid matrix has been studied in the (75WC-25TiCN)-30Co system. Powder samples were sintered above the eutectic temperature for various times under a carbon saturated condition. (Ti,W)(C,N) grains with a rounded shape and WC grains with a faceted shape coexisted in the same Co based liquid. With increasing sintering time, the average size of (Ti.W)(C,N) grains increased continuously and very large WC grains appeared. The growth of rounded (Ti,W)(C,N) grains followed a cubic law, r^3-r^3_0$=kt, where r is the average size of the grains, $r_0$ the initial average size, k the proportionality constant and t the sintering time. indicating a diffusion-controlled growth. On the other hand, the growth of the faceted WC grains resulted in a bimodal grain size distribution, showing an abnormal grain growth. These observations show that the growth behavior of different types of grains is governed by their shape, faceted or rounded, even in the same liquid matrix.

마그네트론 스퍼터링법으로 증착시킨 TiC 박막의 물리적, 전기적 특성에서 RF 파워의 영향 (Effects of RF Power on Physical and Electrical Characteristics of TiC Thin Films Deposited by Magnetron Sputtering)

  • 김남훈;박용섭
    • 한국전기전자재료학회논문지
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    • 제27권7호
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    • pp.458-461
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    • 2014
  • TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

$Tio_2$첨가가 Mn-Zn Ferrites의 자기적 특성에 미치는 영향 (The Effect of $Tio_2$ Addition on the Magnetic Properties of Mn-Zn Ferrites)

  • 박종원;한영호
    • 한국자기학회지
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    • 제9권6호
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    • pp.278-284
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    • 1999
  • Mn-Zn ferrites에 TiO2가 첨가될 때 전력손실, 밀도, 초기투자율, 저항, 그리고 미세구조의 변화를 관찰하였다. 첨가량이 증가함에 따라 밀도는 증가했지만, 초기투자율은 감소하였다. TiO2의 첨가에 따라 electron hopping을 일으키는 활성화에너지와 전기저항이 증가하였다. 115$0^{\circ}C$에서 소결한 TiO2를 1.5 wt% 첨가한 시편은 1 MHz, 25 mT, 8$0^{\circ}C$에서 83 mW/㎤의 전력손실을 나타내었다. 그러나 120$0^{\circ}C$에서 소결할 때는 과대입성장이 발생하여 같은 측정 조건에서 1168 mW/㎤의 전략손실을 얻었다.

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Elastic and Electronic Properties of Point Defects in Titanium Carbide

  • Kang, Dae-Bok
    • 대한화학회지
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    • 제57권6호
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    • pp.677-683
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    • 2013
  • A theoretical study of the electronic structures of $TiC_{1-x}$ and $Ti_{1-x}W_xC$ (x = 0, 0.25) is presented. The density of states and crystal orbital overlap population calculations were used to interpret variations of elastic properties induced by carbon vacancies and alloying substitutions. Our results show why the introduction of vacancies into TiC reduces bulk moduli, while W substitution at a Ti site increases the elastic modulus. The effect of the point defects on the bonding in TiC is investigated by means of extended Huckel tight-binding band calculations.