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http://dx.doi.org/10.5369/JSST.2006.15.6.386

Ohmic contact characteristics of polycrystalline 3C-SiC for high-temperature MEMS applications  

Chung, Gwiy-Sang (School of Electrical Eng., University. of Ulsan)
Ohn, Chang-Min (School of Electrical Eng., University. of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.15, no.6, 2006 , pp. 386-390 More about this Journal
Abstract
This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.
Keywords
ohmic contact; polycrystalline 3C-SiC; TiW; contact resistivity;
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1 M. Mehregany, C. A. Zorman, N. Rajan, and C. H. Wu, 'Silicon carbide MEMS for harsh environments', Proc. IEEE, vol. 86, no. 8, pp. 1594-1609. 1998   DOI   ScienceOn
2 B. J. Wijesundara, G. Valente, W. R. Ashurst, R. T. Howe, A. P. Pisano, C. Carraro, and R. Maboudian, 'Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor', J. Electrochemical Soc., vol. 151 no. 3, pp. 210-214, 2004
3 G. K. Reeves, 'Specific contact resistance using a circular transmission line model', Solid State Electronics, vol. 23, pp. 487-490, 1978   DOI   ScienceOn
4 G. S. Chung, 'Thin SOI structures for sensing and integrated circuit applications', Sensors & Actuators A, vol. 39, pp. 241-251,1993   DOI   ScienceOn
5 M. Mehregany and C. A. Zorrnan, 'SiC MEMS: opportunities and challenges for application in harsh environments', Thin Solid Films, vol. 355, pp. 518-524, 1999   DOI   ScienceOn
6 P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, vol. 82, pp. 210-218, 2000   DOI   ScienceOn
7 P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, vol. 82, pp. 210-218, 2000   DOI   ScienceOn
8 C. Jacob, P. Porouz, H. I. Kuo, and M. Mehregany 'High temperature ohmic contacts to 3C-silicon carbide films', Solid-State Electronics, vol. 42, no. 12, pp. 2329-2334, 1998   DOI   ScienceOn
9 M. I. Chaudhry, W. B. Berry, and M. V. Zeller, 'A study of ohmic contacts on $\beta$-SiC', Int. J. Electronics, vol. 71, pp. 439-444, 1991   DOI
10 J. S. Chen, A. Bachli, M. A. Nicolet, L. Baud, C. Jaussaud, and R. Madar, 'Contact resistivity of Re, Pt and Ta films on n-type $\beta$-SiC: Preliminary results', Mater. Soc. Eng. E, vol. 29, pp. 185-189, 1995   DOI   ScienceOn
11 S. K. Lee, C. M. Zetterling, and M. Ostling, 'Electrical characterization of titanium-based ohmic contacts to 4H-silicon carbide for high-power & hightemperauture operation', J. Korean Phys. Soc., vol. 40, no. 4, pp. 572-576, 2002   DOI   ScienceOn
12 Y. T. Yang, K. L. Ekinci, X. M. H. Huang, L. M. Schiavone, and M. L. Roukes, 'Monocrystalline silicon carbide nano electromechanical systems', Appl. Phys. Lett., vol. 78, no. 2, pp. 165-167, 2001   DOI   ScienceOn
13 J. Kriz, K. Gottfried, T. Scholz, C. Kaufmann, and T. GeBner, 'Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications', Materials Sci. & Eng. E, vol. 46, pp. 180-185, 1997   DOI   ScienceOn