1 |
M. Mehregany, C. A. Zorman, N. Rajan, and C. H. Wu, 'Silicon carbide MEMS for harsh environments', Proc. IEEE, vol. 86, no. 8, pp. 1594-1609. 1998
DOI
ScienceOn
|
2 |
B. J. Wijesundara, G. Valente, W. R. Ashurst, R. T. Howe, A. P. Pisano, C. Carraro, and R. Maboudian, 'Single-source chemical vapor deposition of 3C-SiC films in a LPCVD reactor', J. Electrochemical Soc., vol. 151 no. 3, pp. 210-214, 2004
|
3 |
G. K. Reeves, 'Specific contact resistance using a circular transmission line model', Solid State Electronics, vol. 23, pp. 487-490, 1978
DOI
ScienceOn
|
4 |
G. S. Chung, 'Thin SOI structures for sensing and integrated circuit applications', Sensors & Actuators A, vol. 39, pp. 241-251,1993
DOI
ScienceOn
|
5 |
M. Mehregany and C. A. Zorrnan, 'SiC MEMS: opportunities and challenges for application in harsh environments', Thin Solid Films, vol. 355, pp. 518-524, 1999
DOI
ScienceOn
|
6 |
P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, vol. 82, pp. 210-218, 2000
DOI
ScienceOn
|
7 |
P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, vol. 82, pp. 210-218, 2000
DOI
ScienceOn
|
8 |
C. Jacob, P. Porouz, H. I. Kuo, and M. Mehregany 'High temperature ohmic contacts to 3C-silicon carbide films', Solid-State Electronics, vol. 42, no. 12, pp. 2329-2334, 1998
DOI
ScienceOn
|
9 |
M. I. Chaudhry, W. B. Berry, and M. V. Zeller, 'A study of ohmic contacts on -SiC', Int. J. Electronics, vol. 71, pp. 439-444, 1991
DOI
|
10 |
J. S. Chen, A. Bachli, M. A. Nicolet, L. Baud, C. Jaussaud, and R. Madar, 'Contact resistivity of Re, Pt and Ta films on n-type -SiC: Preliminary results', Mater. Soc. Eng. E, vol. 29, pp. 185-189, 1995
DOI
ScienceOn
|
11 |
S. K. Lee, C. M. Zetterling, and M. Ostling, 'Electrical characterization of titanium-based ohmic contacts to 4H-silicon carbide for high-power & hightemperauture operation', J. Korean Phys. Soc., vol. 40, no. 4, pp. 572-576, 2002
DOI
ScienceOn
|
12 |
Y. T. Yang, K. L. Ekinci, X. M. H. Huang, L. M. Schiavone, and M. L. Roukes, 'Monocrystalline silicon carbide nano electromechanical systems', Appl. Phys. Lett., vol. 78, no. 2, pp. 165-167, 2001
DOI
ScienceOn
|
13 |
J. Kriz, K. Gottfried, T. Scholz, C. Kaufmann, and T. GeBner, 'Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications', Materials Sci. & Eng. E, vol. 46, pp. 180-185, 1997
DOI
ScienceOn
|