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http://dx.doi.org/10.4313/JKEM.2014.27.7.458

Effects of RF Power on Physical and Electrical Characteristics of TiC Thin Films Deposited by Magnetron Sputtering  

Kim, Nam-Hoon (Department of Electrical Engineering, College of Engineering, Chosun University)
Park, Yong Seob (Department of Photoelectronics, Chosun College of Science & Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.7, 2014 , pp. 458-461 More about this Journal
Abstract
TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.
Keywords
TiC; Unbalanced magnetron sputtering; Hardness; RMS surface roughness; Resistivity;
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