• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.3
• /
• pp.9-17
• /
• 2011

Nano-composite solders have been studied to improve the properties of Pb-free solder joints. The nanoparticles in the composite solders were carbon nanotubes(CNTs), metals (Ag, Ni, Cr, etc.), ceramics (SiC, $ZrO_2$, $TiB_2$, etc.). To fabricate the nano-composite solders, mechanical mixing methods and in-situ fabrication method has been used for well-dispersed nano phase. The characteristic properties of the nano-composite solders were high creep resistance, low undercooling, low IMC growth rate and fine microstructures. More researches on the nano-composite solders are required to improve the processibility and the reliability of the nano-composite solder joints.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.6
• /
• pp.263-270
• /
• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.10 no.6
• /
• pp.171-177
• /
• 2002

Metal matrix composites had generated a lot of interest in recent times because of significant in specific properties, it was also highlighted as the material of frontier industry because strength, heat-resistant, corrosion-resistant and wear-resistant were superiored. In recent years, the study of metal matrix composite has increased by aluminum alloy. The study is based on the tribological properties of AC4CH that is a part of the mechanical property of metal matrix composites. Metal matrix composite that is produced from matrix material AC4CH and reinforcement SiO$_2$, Al$_2$O$_3$ and TiO$_2$ are added to the metal matrix composite fur strength so binding among the whisker can take place. Each metal matrix composite is produced using the squeeze casting method. To test for tribe a pin-on-disk machine and lubricant is used without paraffine 8.2CST at room temperature which is 40$\^{C}$. As the results of this study, the tribological properties of each specimen are more improved than AC4CH. The variation of coefficient resistance is more stable at the AC4CH and TiO$_2$, but the variation rates are higher at the inanimate binder.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.3
• /
• pp.157-160
• /
• 2002

The ferroelectric domain variation and electrical performance of $Pb(Zr,Ti)O_{3}$ (PZT) based capacitors through La additions were systematically studied. La substitution up to 10 % was performed to lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10 % La show significantly lower coercive voltage compared to capacitors with 0 % and 3 % La. This is attributed to a systematic microstructure change into $180^{\circ}C$ domain and decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. These capacitors show promise as storage elements in low power memory architectures.

• Korean Journal of Materials Research
• /
• v.9 no.3
• /
• pp.315-321
• /
• 1999

Metal matrix composites have been extensively studied because of their excellent characteristics for structural application. $Al_2O_3$ and SiC have been used as a common reinforcement owing to their good mechanical properties. However the manufacturing cost of these ceramic reinforcement is expensive, so the use of the composites has been restricted to special purposes. In this study, we tested the application possibility as a reinforcement of $Al_2O_3$-TiC powder synthesized by SHS(Self-propagating High-temperature Synthesis) process to Al alloy matrix composite. Also, $Al_2O_3$ short fibers were added with the synthesized powders in order to apply to the Al matrix hybrid composites. Squeeze infiltration casting process was used to make the composite with 25vol% of reinforcement. Microstructure and crystal structure were examined by SEM, OM and XRD, also the mechanical properties were studied by the compressive test and wear test.

• Proceedings of the KIEE Conference
• /
• 1989.11a
• /
• pp.122-126
• /
• 1989

A composite polycide struoture consisting of refractory metal and noble metal silicide film on top of polysilicon bas been considered as a replacement for polysilicon as a gate electrode and Interconnect line in MOSFET integrated circuits. In this paper presents divice characteristics of NOS with $TiSi_2/n^+$polyoide and $CoSi_2/n^+$polycide gate. Also, evaporated Ti,Co films on polysilicon has been annealed by RTA and furnace annealing in $N_2$ abient at temperature of $400^{\circ}C-1000^{\circ}C$. The Ti-,Co-silioide formation is characterized by 4-point probe, silicide growth rate and Its reproductivity bas been examined by SEM.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.11
• /
• pp.2015-2022
• /
• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Journal of the Korean Ceramic Society
• /
• v.44 no.2 s.297
• /
• pp.110-115
• /
• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• Korean Journal of Metals and Materials
• /
• v.50 no.2
• /
• pp.176-182
• /
• 2012

The main purpose of this study was to evaluate the endurance against Al alloy melts and wear resistance of an in-situ synthesized titanium matrix composite (TMC) sleeve for aluminum alloy die-casting. The conventional die-casting shot sleeve material was STD61 tool steel. TMCs have great thermal stability, wear and oxidation resistance. The in-situ reaction between Ti and $B_4C$ leads to two kinds of thermodynamically stable reinforcements, such as TiBw and TiCp. To evaluate the feasibility of the application to a TMCs diecasting shot sleeve, the interfacial reaction behavior was examined between Al alloys melts with TMCs and STD61 tool steel. The pin-on-disk type dry sliding wear test was also investigated for TMCs and STD61 tool steel.

• Journal of the Korean institute of surface engineering
• /
• v.35 no.3
• /
• pp.127-132
• /
• 2002

High speed performance of ferroelectric Pb(Zr,Ti)$O_3$ (PZT) based capacitors is reported. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a ($Ti_{0.9}$ /$Al_{0.1}$ )N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures.