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High speed performance of Pb(Zr,Ti)O$_3$ capacitors through lattice engineering  

Yang, B.L. (Memory R&D Division, Hynix Semiconductor Inc.)
Publication Information
Journal of the Korean institute of surface engineering / v.35, no.3, 2002 , pp. 127-132 More about this Journal
Abstract
High speed performance of ferroelectric Pb(Zr,Ti)$O_3$ (PZT) based capacitors is reported. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a ($Ti_{0.9}$ /$Al_{0.1}$ )N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures.
Keywords
hydrogen-terminated; ferroelectric; high speed; lattice; domin;
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