• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.60-60
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• 1996

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.429-432
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• 1999

The growth of $\textrm{YMnO}_3$ films directly on Si(100) substrates by RF magnetron sputtering system has been performed. The structural properties of $\textrm{YMnO}_3$ films on Si(100) by rapid thermal annealing(RTA) analysed by XRD(X-ray diffraction). The c-axis oriented $\textrm{YMnO}_3$ peaks were observed deposited in $\textrm{YMnO}_3$/Si(100) structure at RF power of 100W and at a temperature range of $840^{\circ}C$~$870^{\circ}C$ in oxygen ambient.

• Korean Chemical Engineering Research
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• v.62 no.1
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• pp.19-26
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• 2024

In this study, the electrochemical properties of SiOx@C composite materials were prepared to alleviate volume expansion and cycle stability of silicon and to increase the capacity of anode material for LIBs. SiO₂ particles of 100, 200, and 500 nm were synthesized by the Stӧber method, and reduced to SiOx (0≤x≤2) through the magnesiothermic reduction method. Then, SiOx@C anode materials were synthesized by carbonization of PVC on SiOx. The physical properties of prepared SiOx and SiOx@C anode materials were analyzed by XRD, SEM, TGA, Raman spectroscopy, XPS and BET. The electrochemical properties were investigated by cycling performance, rate performance, CV and EIS test. As a result, the SiOx@C-7030 manufactured by coating carbon at SiOx : C = 70 : 30 on a 100 nm SiOx with the smallest particle size showed the best electrochemical properties with a discharge capacity of 1055 mAh/g and a capacity retention rate of 81.9% at 100 cycles. It was confirmed that cycle stability was impoved by reducing particle size and carbon coating.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.127-127
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• 1994

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.130-137
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• 2008

$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{\circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.12
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• pp.7283-7286
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• 2014

SiOC films were prepared as insulators for displays by sputtering at low temperatures, and the relationship with the electrical properties waaas examined. The electrical properties of SiOC films were affected by the annealing process, and SiOC films annealed at 100oC showed a significant increase in thickness and a decrease in the reflective index. XRD revealed an increase in the degree of the amorphous structure. Moreover, the capacitance and leakage current of the SiOC films annealed at 100oC decreased. These characteristics of SiOC films highlight their potential as ideal insulators. Amorphous SiOC films by the reduction of polarization are dependent on the elongation effect of the bonding lengths in the structure and the thickness. The properties of these SiOC films are suitable for low temperature displays.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.235-241
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• 1997

The crystallinity and the structure of heteroepitaxially grown $Y_2O_3$ films on the silicon substrates deposited by Ultra High Vacuum Ionized Cluster Beam(UHV-ICB) were investigated by Back-scattering Spectroscopy(BS)/channeling. The channeling minimum values, $X_{min}$, of the $Y_2O_3$ films deposited by other methods were 0.8~0.95 up to the present, which indicates amorphous or highly polycrystalline nature of the $Y_2O_3$ films. On the contrary, the channeling minimum value of heteroepitaxially grown $Y_2O_3$ films on Si(100) and Si(111) deposited by UHV-ICB are 0.28 and 0.25 respectively. These results point out fairly good crystalline quality. It is also observed that the top region of $Y_2O_3$ films have less crystalline defects than the bottom region regardless of the crystal direction of the Si substrates. The axis of $Y_2O_3$<111> epitaxially grown on Si(111) is tilt by $0.1^{\circ}$ with respect to Si<111>. That of $Y_2O_3$<110> on Si(100) is parallel to the Si<001>. The $Y_2O_3$ film on Si(100) grew with single domain structure and that on Si(111) grew with double domain structure. From the result of oxygen resonance BS/channeling, the oxygen atoms in heteroepitaxially grown $Y_2O_3$ film on Si(111) substrate have the crystallinity, but that on Si(100) shows almost channeling amorphous state.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.117-120
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• 2002

We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.103-103
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• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.153-157
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• 2011

We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD), The Si(100) substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition, The ICP treatment led to the enhancement in the coalescence of Ge islands, The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.