한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
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SiO2/Si 및 Si 기판에 rf magnetron sputtering법으로 증착된 적외선 센서용 La0.7Sr0.3MnO3 CMR 박막 저항체 특성연구

La0.7Sr0.3MnO3 CMR thin film resistor deposited on SiO2/Si and Si substrates by rf magnetron sputtering for infrared sensor

  • Choi, Sun-Gyu (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Reddy, A. Sivasankar (School of Advanced Materials Science and Engineering, Yonsei University) ;
  • Yu, Byoung-Gon (Electronics and Telecommunications Research Institute) ;
  • Ryu, Ho-Jun (Electronics and Telecommunications Research Institute) ;
  • Park, Hyung-Ho (School of Advanced Materials Science and Engineering, Yonsei University)
  • 발행 : 2008.03.30
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초록

$La_{0.7}Sr_{0.3}MnO_3$ 박막을 rf 마그네트론 스퍼터를 이용하여 챔버 내 산소가스유량비를 0, 40, 80 sccm 으로 조절하고 후열처리 공정 없이 기판온도를 $350^{\circ}C$로 유지하면서 $SiO_2$/Si(100) 및 Si(100) 기판에 증착하였다. 증착된 $La_{0.7}Sr_{0.3}MnO_3$ 박막은 $SiO_2$/Si(100), Si(100) 기판 모두 (100), (110), (200)면을 갖는 polycrystalline 상태였으며, oxygen flow rate이 증가함에 따라 박막의 grain size가 증가하였다. 증가되는 grain size로 인하여 grain boundary가 감소하였고 따라서 높은 oxygen flow rate에서 증착된 박막은 면저항이 감소하는 현상을 나타내었다. $SiO_2$/Si 기판과 Si 기판에 증착된 LSMO 박막의 TCR 값은 약 -2.0 $\sim$ -2.2%를 나타내었다.

$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{\circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.

키워드

참고문헌

  1. A. Rogalski, Prog. Quant. Electron 27, 59 (2003)
  2. P. W. Kruse, and D. D. Skatrud, Uncooled Infrared Imaging Arrays and Systems (Academic Press, San Diego, 1997) pp.43-122
  3. H. K. Kang, Y. H. Han, H. J. Shin, S. Moon, and T. H. Kim, J. Vac. Sci. Technol. B 21,1027(2003) https://doi.org/10.1116/1.1570850
  4. A. H. Z. Ahmed and R. N. Taita, J. Appl. Phys. 94, 5326 (2003) https://doi.org/10.1063/1.1609633
  5. A. Goyal, M. Rajeswari, R. Shreekala, S. E. Lofland, S. M. Bhagat, T. Boettcher, C. Kwon, R. Ramesh, and T. Venkatesana, Appl. Phys. Lett. 71, 2535 (1997) https://doi.org/10.1063/1.120427
  6. J. -H. Kim and A. M. Grishina, Appl. Phys. Lett. 87, 2033502 (2005)
  7. M. Rajeswari, C. H. Chen, A. Goyal, C. Kwon, M.C. Robson, R. Ramesh, and T. Venkatesan, S. Lakeou, Appl. Phys. Lett. 68, 3555 (1996) https://doi.org/10.1063/1.116635
  8. A. C. Co, S. J. Xia, and V. I. Birss, J. Electrochem. Soc. 152, A570 (2005) https://doi.org/10.1149/1.1859612
  9. R. J. Choudhary, A. S. Ogale, S. R. Shinde, S. Hullavarad, S. B. Ogale, T. Venkatesan, R. N. Bathe, S. I. Patil, and R. Kumar, Appl. Phys. Lett. 84, 3846 (2004) https://doi.org/10.1063/1.1748837
  10. V. Bhosle, and J. Narayan, Appl. Phys. Lett. 90, 101903 (2007) https://doi.org/10.1063/1.2472537
  11. F. Yang, L. Mechin, J.M. Routoure, B. Guillet, and R.A. Chakalov, J. Appl. Phys. 99, 024903 (2006) https://doi.org/10.1063/1.2159546
  12. M. Soltani, M. Chaker, X.X. Jiang, D. Nikanpour, and J. Margot, J. Vac. Sci. Technol. A 24, 1518 (2006) https://doi.org/10.1116/1.2204923
  13. S. Y. Yang, W. L. Kuang, Y. Liou, W. S. Tse, S. F. Lee, and Y. D. Yao, J. Magn. Magn. Mater. 268, 326 (2004) https://doi.org/10.1016/S0304-8853(03)00543-2
  14. C. -H. Lai, C. F. Hsu, Y. C. Chin, and C. Chiang, J. Vac. Sci. Technol. A 19, 1186 (2001) https://doi.org/10.1116/1.1351801
  15. C. V. Ramana, M. Massot, and C. M. Julien, Surf. Interface. Anal. 37, 412 (2005) https://doi.org/10.1002/sia.2022
  16. D. Y. Kim, M. Gowtham, M. S. Shim, and J. Yi, Mater. Sci. Semicond. Process 7, 433 (2004) https://doi.org/10.1016/j.mssp.2004.09.118
  17. O.J. Gonzalez, G. Bistue, E. Castano, and F. J. Gracia, J. Magn. Magn. Mater. 222, 199 (2000) https://doi.org/10.1016/S0304-8853(00)00534-5
  18. A. Lisauskas, S. I. Khartsev, and A. Grishin, Appl. Phys. Lett. 77, 756 (2000) https://doi.org/10.1063/1.127109

피인용 문헌

  1. Thermal Conductivity Measurement of High-k Oxide Thin Films vol.19, pp.2, 2010, https://doi.org/10.5757/JKVS.2010.19.2.141
  2. Fabrication and Device Characteristics of Infrared Photodetector Based on InAs/GaSb Strained-Layer Superlattice vol.18, pp.2, 2009, https://doi.org/10.5757/JKVS.2009.18.2.108