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http://dx.doi.org/10.3740/MRSK.2002.12.2.117

Direct Bonding of Si || SiO2/Si3N4 || Si Wafer Pairs With a Furnace  

Lee, Sang-Hyeon (Dept.of Materials Sciences & Engineering, University of Seoul)
Lee, Sang-Don (Dept.of Materials Sciences & Engineering, University of Seoul)
Seo, Tae-Yun (Dept.of Materials Sciences & Engineering, University of Seoul)
Song, O-Seong (Dept.of Materials Sciences & Engineering, University of Seoul)
Publication Information
Korean Journal of Materials Research / v.12, no.2, 2002 , pp. 117-120 More about this Journal
Abstract
We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.
Keywords
직접접합;Si∥$SiO_2$/${Si_3}{N_4}$∥Si 기판쌍;전기로;
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1 M. Bruel, B. Aspar, and A. J. Auberton-Herve, Jpn. J. Appl. Phys. 36, 1636 (1997)   DOI
2 J. Haisma, T. M. Michielsen, and Gijsbertus A.C.M. Spierings, Jpn. J. Appl. Phys., Vol. 28, No. 5, L725 (1989)   DOI   ScienceOn
3 T. Martini, J. Steinkirchner, und U. Gosele, J. Electrochem. Soc, 31(1), 3549 (1997)
4 J.W. Lee, PhD. thesis (Seoul National University (1999))
5 S. Santucci, L. Lozzi, M. Passacantando, A.R. Phani. E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, J. Non-Cryst. Solids, 245, 224 (1999)   DOI   ScienceOn
6 J.B. Lasky, Appl. Phys. Lett. Vol.48, 78 (1986)   DOI   ScienceOn
7 Q.-Y. Tong, and U. Goesele, Semiconductor Wafer Bonding : Science and Technology, New York, John Wiley & Sons, (1999)
8 V. Lehmann, K. Mitani, R. Stengl, T. Mii, and U. Goesele, Jpn. J. Appl. Phys. 28, L2141 (1989)   DOI
9 M. Shimbo, K. Furukawa, K. Fukuda, K. Tanzawa, J. Appl. Phys. Vol. 60(8) 2987 (1986)   DOI
10 J. Robertson, M.J. Powell, Apply. Phys. Lett. 44, 415 (1984)   DOI   ScienceOn
11 H. Tanaka, H. Uchida, T. Ajioka, and N. Hirashita, IEEE Trans. Elec. Dev. 40, 2331 (1993)
12 S. Santucci, R. Alfonsetti, A. Di Giacomo, P. Fiorani, L. Lozzi, G. Moccia, L. Ottaviano, M. Passacantando, and P. Picozzi, J. Non-Cryst. Solids 216, 156 (1997)   DOI   ScienceOn
13 R. Stengl, T. Tan, and U. Gosele, Jpn. J. Appl. Phys. Vo. 28, No. 10, 969 (1989)
14 Y. Backlund, K. Hermansson, and L. Smith, J. Electrochem. Soc, 139(8), 2299 (1992)   DOI