• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.4.2-4.2
• /
• 2009

산화아연 (ZnO)으로 대표되는 산화물반도체는 최근 다양한 비정질 산화물반도체들이 개발되고 있고 높은 이동도와 저온공정 등의 장점으로, 실리콘 기반 박막소자 (비정질-Si, 또는 다결정-Si(LTPS) 트랜지스터)를 대체할 차세대 박막 트랜지스터 (Thin-Film Transistor)의 핵심소재로 관심을 모으고 있다. 또한, 산화물 반도체는 근본적으로 투명하므로, 투명 전극 및 투명 기판재료와 함께 투명 디스플레이도 구현시킬 수 있을 것이다. 그렇지만, 핵심 전자소재로서 향후 디스플레이 및 디바이스에 성공적으로 적용되기 위해서는 소자의 특성 뿐만아니라, 전기적 신뢰성(reliability)을 강화시킬 필요가 있다. 본 발표에서는 In-Ga-Zn-oxide (IGZO), Zn-Sn-oxide (ZTO), Zn-In-Sn-oxide (ZITO) 및 도핑원소를 첨가한 소재에 이르기까지 다양한 산화물 반도체 소재 기술과 소자의 신뢰성 향상을 위한 기술 등을 소개할 것이다.

• Journal of Electrochemical Science and Technology
• /
• v.6 no.2
• /
• pp.65-74
• /
• 2015

This work examines the characterization and corrosion behaviour of laser alloyed UNSG10150 steel with three different premixed composition Zn-Sn binary powders using a 4.4 kW continuous wave (CW) Rofin Sinar Nd:YAG laser processing system. The steel alloyed samples were cut to corrosion coupons, immersed in sulphuric acid (0.5 M H₂SO₄) solution at 30℃ using electrochemical technique and investigated for its corrosion behaviour. The morphologies and microstructures of the developed coated and uncoated samples were characterized by Optic Nikon Optical microscope (OPM) and scanning electron microscope (SEM/EDS). Moreover, X-ray diffractometer (XRD) was used to identify the phases present. An enhancement of 2.7-times the hardness of the steel substrate was achieved in sample A₁ which may be attributed to the fine microstructure, dislocations and the high degree of saturation of solid solution brought by the high scanning speed. At scanning speed of 0.8 m/min, sample A₁ exhibited the highest polarization resistance R_p (1081678 Ωcm² ), lowest corrosion current density i_corr (4.81×10⁻⁸A/cm² ), and lowest corrosion rate Cr (0.0005 mm/year) in 0.5 M H₂SO₄. The polarization resistance R_p (1081678 Ωcm² ) is 67,813-times the polarization of the UNSG10150 substrate and 99.9972% reduction in the corrosion rate.

• Korean Journal of Materials Research
• /
• v.19 no.5
• /
• pp.245-252
• /
• 2009

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glass substrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a high transmittance of above 80% in the visible range and a low electrical resistivity of $4.5{\times}10^{-4}{\Omega}{\cdot}cm$. The surface morphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature, working pressure, and etching time in the etching process. The optimized surface morphology with a crater shape is obtained at a heater temperature of $350^{\circ}C$, working pressure of 0.5 mtorr, and etching time of 45 seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) are significantly affected by the resulting surface morphologies of textured films. The film surfaces, having uniformly size-distributed craters, represent good light scattering properties of high haze and ADF values. Compared with commercial Asahi U ($SnO_2$:F) substrates, the suitability of textured ZnO:Al films as front electrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical and optical properties.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.346.2-346.2
• /
• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.7 no.2 s.17
• /
• pp.81-87
• /
• 2004

Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.

• Journal of the Korea Safety Management & Science
• /
• v.9 no.6
• /
• pp.197-204
• /
• 2007

Ceramic pigments were developed by using 4 kinds of Brass scraps. Each Brass scraps were mixed with same weight-ratio of Husk ash, and fine-ground by Rotate ring mill(RRG-120, Armstech industrial. co. Ltd, Korea) after firing at $900^{\circ}C$, $1000^{\circ}C$ and $1100^{\circ}C$. As a result, analysis of particle size of synthetic pigments by particle size analyser, they are $3{\mu}m$ as average. The resulting pigments were characterized by using XRD, FT-IR, SEM Structure of the crystals are Zn2SiO4,, and ZnO, Cu2O, CuO, and cristobalite are existed and particles' shape are plate or needle. As a result of analysis of chemical composition by XRF, synthetic pigments have high SiO2 and CuO content and have SnO2, ZnO and NiO, too. 1wt%, 3wt% and 5wt% pigments were added in each lime glaze, lime-barium glaze and lime-magnesia glaze, and fired at oxidation and reducing atmosphere to figure hue in glazes out. As a result of analysis of color, chroma and brightness by UV, colors of glazes fired at oxidation atmosphere turned into green from sky blue, and colors of glazes fired at reducing atmosphere turned into pink and red.

• Korean Journal of Materials Research
• /
• v.7 no.10
• /
• pp.856-862
• /
• 1997

박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.330-332
• /
• 2009

Highly stable bottom gate thin film transistors(TFTs) with a zinc indium tin oxide(Zn-In-Sn-O:ZITO) channel layer have been fabricated by rf-magnetron co-sputtering using a indium tin oxide(ITO:90/10), a tin oxide and a zinc oxide targets. The ZITO TFT (W/L=$40{\mu}m/20{\mu}m$) has a mobility of 24.6 $cm^2$/V.s, a subthreshold swing of 0.12V/dec., a turn-on voltage of -0.4V and an on/off ratio of >$10^9$. When gate field of $1.8{\times}10^5$ V/cm was applied with source-drain current of $3{\mu}A$ at $60^{\circ}C$, the threshold voltage shift was ~0.18 V after 135 hours. We fabricated AM-OLED driven by highly stable bottom gate Zn-In-Sn-O TFT array.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.349-349
• /
• 2009

High quality ZnO:Al films were prepared on glass substrates by in-line RF magnetron sputtering and their surface morphologies were modified by wet-etching process in dilute acid solution to improve optical properties for application to silicon thin film solar cells as front electrode. The as-deposited films show a strong preferred orientation in [001] direction under our experimental conditions. A low resistivity below $5{\times}10^{-4}{\Omega}{\cdot}cm$ and high optical transmittance above 80% in a visible range are achieved in the films deposited at optimized conditions. After wet-etching, the surface morphologies of the films are changed dramatically depending on the deposition conditions, especially working pressure. The optical properties such as total/diffuse transmittance, haze and angular resolved distribution of light are varied significantly with the surface morphology feature, whereas the electrical properties are seldom changed. The cell performances of silicon thin film solar cells fabricated on the textured films are also evaluated in detail with comparison of commercial $SnO_2$:F films.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.8
• /
• pp.1873-1878
• /
• 2013

ITZO ($In_2O_3$ : $SnO_2$ : ZnO = 90wt.% : 5wt.% : 5wt.%) thin films were fabricated on glass substrates (Eagle 2000) at room temperature with various working pressures (1~7 mTorr) by RF magnetron sputtering. The influence of the working pressure on the structural, electrical, and optical properties of the ITZO thin films were investigated. The XRD and FESEM results showed that all ITZO thin films are amorphous structures with very smooth surfaces regardless of the working pressure. Amorphous ITZO thin films deposited at 3 mTorr showed the best properties, such as a low resistivity, high transmittance, and figure of merit of $3.08{\times}10^{-4}{\Omega}{\cdot}cm$, 81 %, and $10.52{\times}10^{-3}{\Omega}^{-1}$, respectively.