• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.198-199
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• 2006

$SrTa_2O_6$(STA) thin films were fabricated by sol-gel method. The films annealed below $700^{\circ}C$, showed amorphous phase and crystallization phase was observed after annealing over $800^{\circ}C$. From high frequency capacitance-voltage measurements, 24nm thick STA thin film annealed at $900^{\circ}C$, has an EOT of 5.7nm and a dielectric constant of 16. Leakage current characteristics were improved by the insertion of chemical oxide between STA and Si. Leakage current densities are around $3.5{\times}10^{-7}A/cm^2$ at 5V for the structure inserted chemical oxide but $1.4{\times}10^{-6}A/cm^2$ at 5V without chemical oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.84-87
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• 2001

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.27-30
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• 2008

Purpose: This research is that $V_2O_5$ cathode's composition is possible in low temperature. Methods: Transparent in visible spectra range and crystallographically amorphous $V_2O_5$ thin films were prepared by simple vacuum thermal evaporation on soda-lime-silica slide glass substrate. After annealing at 100$^{\circ}C$, 150$^{\circ}C$ and 200$^{\circ}C$ for 10 minutes in air, the surface morphology and the fracture-cross section of the films were investigated by field emission - scanning electron microscope. Transmittance in visible spectra range and surface roughness of the films were analyzed by ultra violet - visible spectrophotometer and scanning probe microscope, respectively. Results: As the increase of annealing temperature from 100$^{\circ}C$ to 150$^{\circ}C$ and 200$^{\circ}C$, transmittance of the $V_2O_5$ films decreased. Optical properties will be fully discussed on the basis of the surface morphological results. Conclusions: Optical transmissivity was superior in case of 100$^{\circ}C$, and could make amorphous $V_2O_5$ thin film that surface quality of thin film did homogeneity.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.