• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.11
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• pp.57-62
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• 1998

In this paper, tunable transconductor shows good linearity over a wide input voltage range are proposed. The proposed transconductor employ operating in the nonsaturation(ie., linear) region to improve circuit simplicity and tunability and 6.8V$\_$p-p/ wide input range. Also the circuit employ source-coupled differential pair to provide true differential input and can achieve both positive and negative transconductance values. The proposed circuits are implemented using a 1.2 $\mu\textrm{m}$ single poly double metal n-well CMOS technology. The THD characteristic of proposed circuit is less than 1% for a differential input voltage of up to 6V$\^$p-p/ when supply bias condition is V$\_$DD/=-V$\_$ss/=5V, I$\_$B/=20, 40${\mu}$A, and frequency of input signal is 1KHz.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.5 no.4
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• pp.115-120
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• 1972

The data Presented in this Paper, on the body and Jumping voltage of Penaeus japonicus BATE, are part of a current study on shrimp behaviour in order to improve fishing efficiency of the fishing gear. The experiments concerning electrical stimuli was mostly carried out at the Marine Laboratory of Busan Fisheries College in 1972. The following are the results obtained from the present investigations : 1. When the voltages between a pair of electrodes were fixed constant, the voltage drops between them showed almost constant electrical field. 2. Threshold voltages of the animals varied with body direction to the electrical field, i. e., 200 -500 mV for parallel, 500-1400 mV for vertical and 300-800 mV for diagonal ($45^{\circ}$) settings. 3. Jumping voltages of the animals also varied with the body direction to the electrical field; i. e., 250-1000 mV for parallel, 800-2500 mV for vertical and 400-1300 mV for diagonal settings. 4. The shrimp, in general, were more sensitive to the electrical stimuli when oriented to the cathode rather than the anode. 5. Jumping voltages decreased when the interrupted current was applied to the animals, i. e., less than 200 mV for paralled and 500mV for vertical direction of the body to the electrical field.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1060-1068
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• 2002

Compound continuously variable transmission(CVT) mechanisms are proposed, which can offer a backward mode, a geared neutral, an underdrive mode and an overdrive mode. They are composed of a 2K-H I type differential gear unit, a V-belt type continuously variable unit(CVU), a few friction clutches and gears, and not required of a starting device as a torque converter. Compound CVT mechanisms developed here present two distinct operating modes which are a power circulation mode and a power split mode. The transition of two modes takes place at the particular CVU speed ratio. For these CVT mechanisms, performance analysis related to speed ratio, power ratio and efficiency are executed and proven by experimental studies.

• Journal of Pharmaceutical Investigation
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• v.13 no.4
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• pp.173-182
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• 1983

The influence of prazosin (0.1 mg/kg i.v.) on the excretion and diuretic action of furosemide (2mg/kg i.v.) in rabbits was studied to investigate an interaction between ${\alpha}-adrenergic$ blocking agent, prazosin and furosemide. The results were as follows; 1) With the combined administration of prazosin and furosemide, the plasma concentration of furosemide was increased, the urinary excretion rate and renal clearance of furosemide were reduced, and tile biological half-life of furosemide was increased. 2) The diuretic action of furosemide was significantly reduced with the combined administration of prazosin: maximal decrease in urine volume, urinary electrolytes, clearance of $Na^+$ and $Cl^-$, and GFR and RPF, as well as maximal increase in $Na^+$ reabsorption rate were noted 10 minutes after administration of furosemide (2mg/kg i.v.)

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• Progress in Superconductivity and Cryogenics
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• v.21 no.3
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• pp.47-50
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• 2019

The paper gives the results of the experiments with a model two-section REBCO solenoid cooled by either gaseous helium (GHe) or sub-cooled/solid nitrogen (SN2) in (50-77) K temperature range. The major cooling source was a single-stage cryocooler Sumitomo CH-110 with the cooling power of 175 W and 130 W at 77 K and 50 K respectively. The coil itself was not directly conduction cooled. We compare the time taken by both coolants to obtain the temperature of the magnet of about 50 K and the homogeneity of the temperature distribution within the cryostat. Test results for the coil operation in solid nitrogen together with the comparison of its critical properties in SN2 and GHe are also presented.

• Herbal Formula Science
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• v.19 no.1
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• pp.35-49
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• 2011

Objectives : This study aims to reveal the characteristics of formulas in "Xi$\v{a}$o' Er Y$\`{a}$o Zh$\`{e}$ng Zh$\'{\i}$ Ju$\'{\e}$. Methods : For that objectives, We analyzes formulas in "Xi$\v{a}$o' Er Y$\`{a}$o Zh$\`{e}$ng Zh$\'{\i}$ Ju$\'{\e}$. In the text, 132 formulas were described. To comprehend the formulas, we classified them as several bases. Results : After those analyses, we bring to a conclusion as follows. 1. 30 formulas are described that treated convulsive diseases (j$\={i}$ngf$\={e}$ng, 惊風). Next, g$\={a}$n(疳), parasite infection, diarrhea/dysentery, dermatosis and etc were in the order. 2. Classified by the formulation, Yu$\'{\a}$nj$\`{i}$(圓劑) was the best(70 kinds of formulas, 53%). S$\v{a}$nj$\`{i}$(散劑) was a form of 41 formulas(31%). T$\={a}$ngj$\`{i}$(湯劑) and g$\={a}$oj$\`{i}$(膏劑) were a form of 5 formulas each. 10 formulas were assumed the form of w$\`{a}$iy$\`{o}$ngj$\`{i}$(外用劑). 3. We researched in-depth analysis of Yu$\'{\a}$nj$\`{i}$. As a results, dosage, additive(輔料) and the time to take of Yu$\'{\a}$nj$\`{i}$ were decomposed. Also, the formulas that treated convulsive diseases were analyzed by the herbs classification. Conclusions : Though the formulas that treated convulsive diseases were hard to application at local clinic, overall nosology of pediatrics was reflected comparatively. "Xi$\v{a}$o' Er Y$\`{a}$o Zh$\`{e}$ng Zh$\'{\i}$ Ju$\'{\e}$ was expected to play a role for reconsideration of formulas' formulation.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.692-699
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• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.378-378
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• 2010

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low, temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_l^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.